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21 Mar 2011

Volume 98, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 98, 123101 (2011); http://dx.doi.org/10.1063/1.3567492 (3 pages)

Linus C. Chuang, Michael Moewe, Kar Wei Ng, Thai-Truong D. Tran, Shanna Crankshaw, Roger Chen, Wai Son Ko, and Connie Chang-Hasnain
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A colorimetric receptor combined with a microcantilever sensor for explosive vapor detection

Weibin Zhu, Jung Su Park, Jonathan L. Sessler, and Angelo Gaitas

Appl. Phys. Lett. 98, 123501 (2011); http://dx.doi.org/10.1063/1.3567011 (3 pages) | Cited 2 times

Online Publication Date: 22 March 2011

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Substantial effort has been devoted to the synthesis of molecular receptors that can function as chemosensors for nitroaromatic explosives. In spite of several advantages, these receptors suffer from low sensitivity and difficulties translating the response into the gas phase. We have combined tetrathiafulvalene-functionalized calix[4]pyrrole, a colorimetric receptor, with a polyimide microcantilever, that includes a mechanical stress sensing element. The resulting system is capable of detecting 10 ppb trinitrobenzene vapor. This represents a 30-fold improvement relative to the receptor in halogenated solvents, suggesting that this approach can provide a solution to translating the chemical response of colorimetric chemosensors into practical devices.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.Dx Analytical methods involving electronic spectroscopy
07.10.Cm Micromechanical devices and systems

Asymmetric pulsing for reliable operation of titanium/manganite memristors

F. Gomez-Marlasca, N. Ghenzi, P. Stoliar, M. J. Sánchez, M. J. Rozenberg, G. Leyva, and P. Levy

Appl. Phys. Lett. 98, 123502 (2011); http://dx.doi.org/10.1063/1.3565431 (3 pages) | Cited 1 time

Online Publication Date: 22 March 2011

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We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 105 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

George Adamopoulos, Stuart Thomas, Donal D. C. Bradley, Martyn A. McLachlan, and Thomas D. Anthopoulos

Appl. Phys. Lett. 98, 123503 (2011); http://dx.doi.org/10.1063/1.3568893 (3 pages) | Cited 7 times

Online Publication Date: 22 March 2011

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We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm2/V s and current on/off ratio on the order of 105. This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.
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85.30.Tv Field effect devices
81.15.Rs Spray coating techniques
68.55.aj Insulators
78.66.Nk Insulators
78.40.Ha Other nonmetallic inorganics
77.55.dj For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

Livio Lattanzio, Arnab Biswas, Luca De Michielis, and Adrian M. Ionescu

Appl. Phys. Lett. 98, 123504 (2011); http://dx.doi.org/10.1063/1.3569760 (3 pages) | Cited 1 time

Online Publication Date: 22 March 2011

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This letter proposes a hybrid abrupt switch principle and a corresponding device architecture that combines quantum mechanical band-to-band and barrier tunneling mechanisms. The device overcomes the intrinsically low on-current (ION) of conventional tunnel field-effect transistors (TFETs) and the 60 mV/dec subthreshold swing limitation of metal-oxide-semiconductor FETs at room temperature. The device principle and characteristics are studied through two-dimensional numerical simulations. The predicted performance of such hybrid TFET architecture, implementing an ultrathin (0.5 nm) tunneling dielectric between metal source and silicon channel are: average SS values as low as 43 mV/dec, ION ∼ 49.3 μA/μm, and ION/IOFF ∼ 107.
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85.30.Tv Field effect devices

Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

M. Feng, R. Bambery, and N. Holonyak, Jr.

Appl. Phys. Lett. 98, 123505 (2011); http://dx.doi.org/10.1063/1.3569949 (3 pages) | Cited 6 times

Online Publication Date: 22 March 2011

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Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, Δhν recombination radiation, sensitivity of Eλ0→Eλ1,λ0→λ1,λ0>λ1) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and “slide” up and down as a function of base current (IB), collector-base voltage (VBC or VCE), and the influence of QW bandfilling (with increased sensitivity at Eλ0→Eλ1) on photon-assisted base-collector tunneling.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Gk Tunneling

Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices

Changhwan Choi, Kam-Leung Lee, and Vijay Narayanan

Appl. Phys. Lett. 98, 123506 (2011); http://dx.doi.org/10.1063/1.3570655 (3 pages) | Cited 3 times

Online Publication Date: 23 March 2011

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The impact of diffusionless anneal using dynamic surface anneal (DSA) on the electrical properties of p-type metal-oxide-semiconductor devices with high-k gate dielectrics and metal gate was investigated by monitoring flatband voltage (VFB) and equivalent oxide thickness (EOT) change. Compared to rapid thermal anneal, DSA induces a positive VFB shift without EOT degradation. This finding is attributed to suppression of positively charged oxygen vacancies [Vo++] generation in high-k dielectrics due to the shorter thermal budget. Processing parameters including high-k dielectrics, TiN metal gate thickness, and Si cap deposition temperature significantly affect thermally induced-oxygen vacancies, leading to different VFB behaviors.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.jd Vacancies
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Compression-induced failure of electroactive polymeric thin films

D. De Tommasi, G. Puglisi, and G. Zurlo

Appl. Phys. Lett. 98, 123507 (2011); http://dx.doi.org/10.1063/1.3568885 (3 pages) | Cited 5 times

Online Publication Date: 23 March 2011

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The onset of compression induces wrinkling in actuation devices based on electroactive polymer thin films, which leads to a sudden decrease in performances and, eventually, to failure. Inspired by the classical tension field theory for thin membranes, we provide a general framework for the analysis of the insurgence of in-plane compressions. Our main result is the analytical deduction of a voltage-dependent domain of tensile configurations in the principal stretches plane.
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68.60.Bs Mechanical and acoustical properties

Meandering collimated beam of surface acoustic waves on a trigonal crystal ball

Takayuki Yanagisawa, Tsuneo Ohgi, Shingo Akao, Noritaka Nakaso, Yusuke Tsukahara, Yoshikazu Ohara, Toshihiro Tsuji, and Kazushi Yamanaka

Appl. Phys. Lett. 98, 123508 (2011); http://dx.doi.org/10.1063/1.3567517 (3 pages) | Cited 1 time

Online Publication Date: 24 March 2011

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To fully exploit high-quality piezoelectric crystals in acoustic wave devices, it is necessary to remove limitations not related to the crystal quality. Among them, the “diffraction loss” is most serious. Previously, we have developed the ball surface acoustic wave (SAW) sensor using crystal ball. However, because of the piezoelectric crystal’s strong anisotropy, we could not control the propagation route of SAWs on a ball. Here, we report a discovery that the beam propagates along a meander route, identical at every turn. Consequently, we succeeded in completely removing the diffraction loss. Since it can fully exploit the quality of crystals, it will stimulate progress of crystal technology.
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43.35.Pt Surface waves in solids and liquids
43.60.Vx Acoustic sensing and acquisition
68.35.Iv Acoustical properties

Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors

Hau-Yu Lin, San-Lein Wu, Chao-Ching Cheng, Chih-Hsin Ko, Clement H. Wann, You-Ru Lin, Shoou-Jinn Chang, and Tai-Bor Wu

Appl. Phys. Lett. 98, 123509 (2011); http://dx.doi.org/10.1063/1.3571293 (3 pages) | Cited 3 times

Online Publication Date: 24 March 2011

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We report the characteristics of HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2/Al2O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4)-surface sample, improvements of capacitance-voltage characteristics for (1×1)-surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al2O3/InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1)-surface sample tends to avoid the oxidization process and become less pinning.
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84.32.Tt Capacitors

Switching energy-delay of all spin logic devices

Behtash Behin-Aein, Angik Sarkar, Srikant Srinivasan, and Supriyo Datta

Appl. Phys. Lett. 98, 123510 (2011); http://dx.doi.org/10.1063/1.3567772 (3 pages)

Online Publication Date: 24 March 2011

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A recent proposal called all spin logic (ASL) proposes to store information in nanomagnets that communicate with spin currents in order to construct spin based digital circuits. We present a coupled magnetodynamics/spin-transport model for ASL devices that is based on established physics and is benchmarked against available experimental data. This model is used to show the linear dependence of switching energy and quadratic dependence of energy-delay of ASL devices on the number of Bohr magnetons comprising a nanomagnet. A scaling scheme that could lower the energy-delay of spin-torque switching while maintaining thermal stability is discussed.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
85.70.-w Magnetic devices

Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors

Chieh-Jen Ku, Ziqing Duan, Pavel I. Reyes, Yicheng Lu, Yi Xu, Chien-Lan Hsueh, and Eric Garfunkel

Appl. Phys. Lett. 98, 123511 (2011); http://dx.doi.org/10.1063/1.3567533 (3 pages) | Cited 15 times

Online Publication Date: 25 March 2011

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The effects of the Mg composition (x = 0, 0.06, and 0.10) on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors (TFTs) are investigated. The Mg0.06Zn0.94O TFT shows the smallest subthreshold slope and highest field effect mobility. The O1s spectra of x-ray photoelectron spectroscopy measurements indicate that the oxygen vacancies are reduced in Mg0.06Zn0.94O relative to a pure ZnO channel device. Mg0.06Zn0.94O TFTs also show higher thermal stability compared to the pure ZnO TFTs, which is mainly attributed to the suppression of oxygen vacancies in the channel.
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85.30.Tv Field effect devices

Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhaojun Lin, Yu Zhang, Lingguo Meng, Chongbiao Luan, Zhifang Cao, Hong Chen, and Zhanguo Wang

Appl. Phys. Lett. 98, 123512 (2011); http://dx.doi.org/10.1063/1.3569138 (3 pages) | Cited 6 times

Online Publication Date: 25 March 2011

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Using the measured capacitance-voltage curves of Ni Schottky contacts with different contact areas and the current-voltage characteristics for the circular and rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, we found that the polarization Coulomb field scattering has an important influence on the two-dimensional electron gas (2DEG) electron mobility in both the circular and rectangular AlGaN/AlN/GaN HFETs. Moreover, the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructures is relatively weaker compared to that in AlGaN/GaN heterostructures, which is attributed to the AlN interlayer in AlGaN/AlN/GaN heterostructures to enlarge the average distance between the 2DEG electrons and the polarization charges.
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85.30.Tv Field effect devices
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