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21 Mar 2011

Volume 98, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 98, 123101 (2011); http://dx.doi.org/10.1063/1.3567492 (3 pages)

Linus C. Chuang, Michael Moewe, Kar Wei Ng, Thai-Truong D. Tran, Shanna Crankshaw, Roger Chen, Wai Son Ko, and Connie Chang-Hasnain
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Silicone substrate with in situ strain relief for stretchable thin-film transistors

Ingrid M. Graz, Darryl P. J. Cotton, Adam Robinson, and Stéphanie P. Lacour

Appl. Phys. Lett. 98, 124101 (2011); http://dx.doi.org/10.1063/1.3570661 (3 pages) | Cited 6 times

Online Publication Date: 22 March 2011

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We have manufactured stretchable thin-film transistors and interconnects directly onto an engineered silicone matrix with localized and graded mechanical compliance. The fabrication only involves planar and standard processing. Brittle active device materials are patterned on non deformable elastomer regions (strain <1% at all times) while interconnects run smoothly from “stiff” to “soft” elastomer. Pentacene thin-film transistors sustain applied strain up to 13% without electrical degradation and mechanical fracture. This integrated approach opens promising options for the manufacture of physically adaptable and transformable circuitry.
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85.30.Tv Field effect devices
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