Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires

Baird, Lee; Ong, C. P.; Cole, R. Adam; Haegel, N. M.; Talin, A. Alec; Li, Qiming; Wang, George T.

doi:doi:10.1063/1.3573832

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Band offsets between SiO₂ and phase change materials in the (GeTe)_x(Sb₂Te₃)_1−x pseudobinary system

The energy band alignment between stoichiometric phase change alloys residing along the pseudobinary line of GeTe–Sb2Te3[(GeTe)x(Sb2Te3)1−x] and SiO2 was obtained employing high-resolution x-ray photoelectron spectroscopy. The valence band offsets were determined using both the core-level spectra and valence band spectra in the analysis. The results obtained show that the band offsets vary with the composition of the (GeTe)x(Sb2Te3)1−x alloy, exhibiting a parabolic dependence on the amount of G...

Intersubband transitions at atmospheric window in Al_xGa_1−xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer

Defects and strain control in AlxGa1−xN/GaN multiple quantum wells (MQWs) for intersubband transitions (ISBTs) at atmospheric window grown on GaN/sapphire templates by metal-organic chemical vapor deposition have been investigated adopting strain modulation technique using AlN/GaN superlattices (SLs) interlayer. It is found that cracking in the MQWs can be effectively avoided adopting AlN/GaN SLs interlayer. It is demonstrated that AlN/GaN SLs interlayer acts as a flexible layer and relieves mo...

Minority carrier diffusion lengths (L_d) are measured for GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires using a technique based on imaging of recombination luminescence. The effect of shell material on transport properties is measured. An AlGaN shell produces L_d values in excess of 1 μm and a relative insensitivity to wire diameter. An InGaN shell reduces effective diffusion length, while a dependence of L_d on diameter is observed for uncoated nanowires.

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KEYWORDS and PACS

Keywords

aluminium compounds, carrier lifetime, gallium compounds, III-V semiconductors, indium compounds, minority carriers, nanowires, photoluminescence, semiconductor quantum wires, wide band gap semiconductors

PACS

73.63.Nm

Quantum wires
78.55.Cr

III-V semiconductors
78.67.Lt

Quantum wires
78.67.Uh

Nanowires
72.20.Jv

Charge carriers: generation, recombination, lifetime, and trapping
73.21.Hb

Quantum wires

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http://dx.doi.org/10.1063/1.3573832

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0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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Supplemental Files (EPAPS)

Supplementary Material.doc (3652 kB) 30-Mar-2011 8:40

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