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4 Apr 2011

Volume 98, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 141903 (2011); http://dx.doi.org/10.1063/1.3548546 (3 pages)

H. Hattab, A. T. N’Diaye, D. Wall, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen
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High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices

S. Abdollahi Pour, E. K. Huang, G. Chen, A. Haddadi, B.-M. Nguyen, and M. Razeghi

Appl. Phys. Lett. 98, 143501 (2011); http://dx.doi.org/10.1063/1.3573867 (3 pages) | Cited 17 times

Online Publication Date: 4 April 2011

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The dominant dark current mechanisms are identified and suppressed to improve the performance of midwave infrared InAs/GaSb type-II superlattice photodiodes at high temperatures. The optimized heterojunction photodiode exhibits a quantum efficiency of 50% for 2 μm thick active region without any bias dependence. At 150 K, R0A of 5100 Ω cm2 and specific detectivity of 1.05×1012 cm Hz0.5/W are demonstrated for a 50% cutoff wavelength of 4.2μm. Assuming 300 K background temperature and 2π field of view, the performance of the detector is background limited up to 180 K, which is improved by 25 °C compared to the homojunction photodiode. Infrared imaging using f/2.3 optics and an integration time of 10.02 ms demonstrates a noise equivalent temperature difference of 11 mK at operating temperatures below 120 K.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories

Jung-Kyu Lee, Ju-Wan Lee, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Il-whan Cho, Hyuck-In Kwon, and Jong-Ho Lee

Appl. Phys. Lett. 98, 143502 (2011); http://dx.doi.org/10.1063/1.3575572 (3 pages) | Cited 1 time

Online Publication Date: 5 April 2011

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Random telegraph noise (RTN) has been studied in amorphous TiOx (α-TiOx) resistance switching random access memories (RRAMs). The RTN having two discrete current levels was observed only in the high-resistance state of the RRAMs. By investigating the bias dependence of capture and emission time constants, we extracted the vertical location of a trap responsible for the RTN in RRAM devices. The trap causing the RTN was found around 5.7 nm below the Ti (top electrode). The trap energy was less by 0.18 eV than the conduction band edge of the TiOx.
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84.30.Sk Pulse and digital circuits

Impact of field-induced quantum confinement in tunneling field-effect devices

William G. Vandenberghe, Bart Sorée, Wim Magnus, Guido Groeseneken, and Massimo V. Fischetti

Appl. Phys. Lett. 98, 143503 (2011); http://dx.doi.org/10.1063/1.3573812 (3 pages) | Cited 6 times

Online Publication Date: 5 April 2011

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Being the working principle of a tunnel field-effect transistor, band-to-band tunneling is given a rigorous quantum mechanical treatment to incorporate confinement effects, multiple electron and hole valleys, and interactions with phonons. The model reveals that the strong band bending near the gate dielectric, required to create short tunnel paths, results in quantization of the energy bands. Comparison with semiclassical models reveals a big shift in the onset of tunneling. The effective mass difference of the distinct valleys is found to reduce the subthreshold swing steepness.
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85.30.Tv Field effect devices

Electron and hole transport in poly(fluorene-benzothiadiazole)

Yuan Zhang and Paul W. M. Blom

Appl. Phys. Lett. 98, 143504 (2011); http://dx.doi.org/10.1063/1.3574907 (3 pages) | Cited 6 times

Online Publication Date: 7 April 2011

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We investigate the electron and hole transport in poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT). An Ohmic hole contact on F8BT is achieved by using the high work function anode MoO3 as hole injection contact, enabling the occurrence of space-charge limited currents. The electron transport in F8BT is trap-limited and the traps can be deactivated using n-type doping by decamethylcobaltocene (DMC). Due to the alignment of the energy levels of DMC and F8BT the electrons from the DMC donor not only fill the traps but also fill up the lowest unoccupied molecular orbital of F8BT such that the electron transport can be enhanced beyond the hole transport.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
77.22.Jp Dielectric breakdown and space-charge effects

Design of lossless anchors for microacoustic-wave resonators utilizing phononic crystal strips

Feng-Chia Hsu, Jin-Chen Hsu, Tsun-Che Huang, Chin-Hung Wang, and Pin Chang

Appl. Phys. Lett. 98, 143505 (2011); http://dx.doi.org/10.1063/1.3573776 (3 pages) | Cited 3 times

Online Publication Date: 8 April 2011

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In micromechanical acoustic-wave resonators, energy dissipation through the anchors into the substrates may result in a low quality (Q) factor. To eliminate the ill effect of anchor losses, a design of lossless anchor based on phononic crystal (PC) strips for the microacoustic-wave resonators is presented. PC strips with acoustic forbidden bands are introduced to suppress the anchor loss and to serve as the suspensions for bar-type resonators. Numerical analysis shows that the acoustic energy leak can be effectively suppressed and the stored energy inside the resonators can be enhanced. A high-Q resonator with minimized anchor loss is expected.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
07.10.Cm Micromechanical devices and systems
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