APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Apr 2011

Volume 98, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 141903 (2011); http://dx.doi.org/10.1063/1.3548546 (3 pages)

H. Hattab, A. T. N’Diaye, D. Wall, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Yoontae Hwang, Varistha Chobpattana, Jack Y. Zhang, James M. LeBeau, Roman Engel-Herbert, and Susanne Stemmer

Appl. Phys. Lett. 98, 142901 (2011); http://dx.doi.org/10.1063/1.3575569 (3 pages) | Cited 9 times

Online Publication Date: 4 April 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to ∼5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition.
Show PACS
84.32.Tt Capacitors
85.30.Tv Field effect devices
81.07.Bc Nanocrystalline materials

Strong strain dependence of ferroelectric coercivity in a BiFeO3 film

M. D. Biegalski, D. H. Kim, S. Choudhury, L. Q. Chen, H. M. Christen, and K. Dörr

Appl. Phys. Lett. 98, 142902 (2011); http://dx.doi.org/10.1063/1.3569137 (3 pages) | Cited 11 times

Online Publication Date: 5 April 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The ferroelectric polarization loop of an epitaxial BiFeO3 film on a piezoelectric substrate has been investigated as a function of continuously and reversibly varied biaxial strain of ε = 0.36%–0.51%. Over this range, the ferroelectric coercive field (EC) at 80 K increases reversibly by 36% with the increasing tensile strain. In contrast, phase-field simulations predict the opposite trend of dEC/dε<0. Therefore, we attribute the observed EC(ε) dependence to the strain dependence of domain dynamics, which are not included in thermodynamic models. The strain dependence of the remanent polarization agrees with previous results.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ej Polarization and depolarization
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
77.80.-e Ferroelectricity and antiferroelectricity
FREE

Soft generators using dielectric elastomers

Thomas G. McKay, Benjamin M. O’Brien, Emilio P. Calius, and Iain A. Anderson

Appl. Phys. Lett. 98, 142903 (2011); http://dx.doi.org/10.1063/1.3572338 (3 pages) | Cited 16 times

Online Publication Date: 5 April 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The potential to produce light-weight, low-cost, wearable dielectric elastomer generators has been limited by the requirement for bulky rigid, and expensive external circuitry. In this letter, we present a soft dielectric elastomer generator whose stretchable circuit elements are integrated within the membrane. The soft generator achieved an energy density of 10 mJ/g at an efficiency of 12% and simply consisted of low-cost acrylic membranes and carbon grease mounted in a frame.
Show PACS
84.60.Ve Energy storage systems, including capacitor banks
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close