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4 Apr 2011

Volume 98, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 98, 141903 (2011); http://dx.doi.org/10.1063/1.3548546 (3 pages)

H. Hattab, A. T. N’Diaye, D. Wall, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen
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Publisher’s Note: “Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes” [ Appl. Phys. Lett. 70, 2978 (1997) ]

C. J. Sun, M. Zubair Anwar, Q. Chen, J. W. Yang, M. Asif Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 98, 149901 (2011); http://dx.doi.org/10.1063/1.3576116 (1 page)

Online Publication Date: 4 April 2011

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99.10.Fg Publisher's note
85.60.Jb Light-emitting devices
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