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11 Apr 2011

Volume 98, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 98, 153103 (2011); http://dx.doi.org/10.1063/1.3555342 (3 pages)

Hsin-Yu Wu and Brian T. Cunningham
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Hot wire chemical vapor deposition of germanium selenide thin films for nonvolatile random access memory applications

D. Reso, M. Silinskas, M. Lisker, A. Schubert, and E. P. Burte

Appl. Phys. Lett. 98, 151901 (2011); http://dx.doi.org/10.1063/1.3579192 (3 pages)

Online Publication Date: 11 April 2011

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Thin films of germanium selenide (GexSe100−x with 0<x<57) were deposited on different substrates by hot wire metalorganic chemical vapor deposition using tetraallylgermanium and di-tert-butylselenide. The growth kinetics of the deposition process as well as the properties of the films were investigated. The growth rate was found to decrease with increasing temperature and decreasing pressure. The conformal step coverage was demonstrated. Germanium selenide films covered and subsequently diffused by silver were used as programmable metallization cells for a verification of the electrical switching properties.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.40.Ls Metallization, contacts, interconnects; device isolation
68.55.A- Nucleation and growth

Mechanism for transient migration of xenon in UO2

X.-Y. Liu, B. P. Uberuaga, D. A. Andersson, C. R. Stanek, and K. E. Sickafus

Appl. Phys. Lett. 98, 151902 (2011); http://dx.doi.org/10.1063/1.3579198 (3 pages) | Cited 4 times

Online Publication Date: 11 April 2011

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In this letter, we report recent work on atomistic modeling of diffusion migration events of the fission gas product xenon in UO2 nuclear fuel. Under nonequilibrium conditions, Xe atoms can occupy the octahedral interstitial site, in contrast to the thermodynamically most stable uranium substitutional site. A transient migration mechanism involving Xe and two oxygen atoms is identified using basin constrained molecular dynamics employing a Buckingham type interatomic potential. This mechanism is then validated using density functional theory calculations using the nudged elastic band method. An overall reduction in the migration barrier of 1.6–2.7 eV is obtained compared to vacancy-mediated diffusion on the uranium sublattice.
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66.30.je Diffusion of gases
61.72.jj Interstitials
66.30.Dn Theory of diffusion and ionic conduction in solids
28.41.Bm Fuel elements, preparation, reloading, and reprocessing

Subwavelength electromagnetic diode: One-way response of cascading nonlinear meta-atoms

Yuancheng Fan, Jin Han, Zeyong Wei, Chao Wu, Yang Cao, Xing Yu, and Hongqiang Li

Appl. Phys. Lett. 98, 151903 (2011); http://dx.doi.org/10.1063/1.3579241 (3 pages) | Cited 4 times

Online Publication Date: 11 April 2011

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We propose a scheme for subwavelength electromagnetic diode by employing cascading nonlinear meta-atoms. One-way response is conceptually demonstrated on a microwave transmission line comprising of three metallic ring resonators acting as meta-atoms and a varactor as the nonlinear medium inclusion. Experiments show that our implementation can operate simultaneously as forward diode and backward diode at different frequencies. A transmission contrast of up to 14.7 dB was achieved between forward and backward transmission. Subwavelength size of our diode should be useful for miniaturization of integrated optical nanocircuits.
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84.32.Tt Capacitors
84.40.Az Waveguides, transmission lines, striplines
FREE

Mechanically and optically reliable folding structure with a hyperelastic material for seamless foldable displays

Hyuk-Jun Kwon, HongShik Shim, Sunkook Kim, Woong Choi, Youngtea Chun, InSeo Kee, and SangYoon Lee

Appl. Phys. Lett. 98, 151904 (2011); http://dx.doi.org/10.1063/1.3576906 (3 pages) | Cited 4 times

Online Publication Date: 11 April 2011

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We report a mechanically and optically robust folding structure to realize a foldable active matrix organic-light-emitting-diode (AMOLED) display without a visible crease at the junction. A nonlinear stress analysis, based on a finite element method, provided an optimized design. The folding-unfolding test on the structure exhibited negligible deterioration of the relative brightness at the junction of the individual panels up to 105 cycles at a folding radius of 1 mm, indicating highly reliable mechanical and optical tolerances. These results demonstrate the feasibility of seamless foldable AMOLED displays, with potentially important technical implications on fabricating large size flexible displays.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Jb Light-emitting devices

Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer

Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama

Appl. Phys. Lett. 98, 151905 (2011); http://dx.doi.org/10.1063/1.3574541 (3 pages)

Online Publication Date: 13 April 2011

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We demonstrate that, in a GaSb/GaAs epitaxial structure, the coherent longitudinal optical (LO) phonon in the GaAs layer optically masked by the GaSb top layer is observed utilizing terahertz- electromagnetic-wave spectroscopy. It is confirmed from a Raman scattering measurement that only the optical phonon in the GaSb layer is optically observable, where the photon energy of the excitation laser beam was almost the same as that of the femtosecond pulse pump beam for the terahertz wave measurement. In the terahertz wave measurement, the Fourier power spectrum of the terahertz waveform exhibits both the GaAs and the GaSb LO phonons; namely, the coherent LO phonon in the optically masked GaAs buffer layer is observed in the terahertz wave measurement. This fact demonstrates that the instantaneous surface potential modulation originating from the impulsive carrier excitation by the pump pulses reaches the GaAs buffer layer. Consequently, the above-mentioned surface potential modulation generates the coherent GaAs LO phonon.
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78.70.Gq Microwave and radio-frequency interactions
78.30.Hv Other nonmetallic inorganics
63.20.dd Measurements
78.66.Fd III-V semiconductors

Correlation between internal states and plasticity in bulk metallic glass

J. Tan (谭军), Y. Zhang (张岳), B. A. Sun (孙保安), M. Stoica, C. J. Li (李才巨), K. K. Song (宋凯凯), U. Kühn, F. S. Pan (潘复生), and J. Eckert

Appl. Phys. Lett. 98, 151906 (2011); http://dx.doi.org/10.1063/1.3580774 (3 pages) | Cited 6 times

Online Publication Date: 13 April 2011

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We report a close correlation between the internal states and plasticity in a bulk metallic glass (BMG) and discover that the optimization of copper-mold casting current can induce large plasticity stably in an otherwise brittle BMG. It is possible to confirm that larger plasticity corresponds to the internal states with more average free volume (FV) as revealed by lower density, higher enthalpy change, and higher Poisson’s ratio. The enhanced plastic deformation mechanism is interpreted based on the FV model of BMGs, and our results may have some implications for understanding the role of the FV during plastic deformation of BMGs.
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81.40.Lm Deformation, plasticity, and creep
62.20.fq Plasticity and superplasticity
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
62.20.dj Poisson's ratio
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.43.Fs Glasses

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

R. R. Pelá, C. Caetano, M. Marques, L. G. Ferreira, J. Furthmüller, and L. K. Teles

Appl. Phys. Lett. 98, 151907 (2011); http://dx.doi.org/10.1063/1.3576570 (3 pages) | Cited 10 times

Online Publication Date: 14 April 2011

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We present parameter-free calculations of electronic properties of InGaN, InAlN, and AlGaN alloys. The calculations are based on a generalized quasichemical approach, to account for disorder and composition effects, and first-principles calculations within the density functional theory with the LDA-1/2 approach, to accurately determine the band gaps. We provide precise results for AlGaN, InGaN, and AlInN band gaps for the entire range of compositions, and their respective bowing parameters.
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71.20.Nr Semiconductor compounds
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

An ultrathin twist-structure polarization transformer based on fish-scale metallic wires

Jin Han, Hongqiang Li, Yuancheng Fan, Zeyong Wei, Chao Wu, Yang Cao, Xing Yu, Fang Li, and Zhanshan Wang

Appl. Phys. Lett. 98, 151908 (2011); http://dx.doi.org/10.1063/1.3580608 (3 pages) | Cited 7 times

Online Publication Date: 15 April 2011

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This study theoretically and experimentally investigates the transmission properties of a metamaterial slab comprised of two layers of metallic fish-scale structure arrays and a sandwiched dielectric layer. Calculations show that the asymmetric transmission can be tuned by varying the slab thickness, due to near-field interlayer coupling. The spatial evolution of the electric field indicates that the twist structure functions as a perfect polarization transformer at certain frequencies. Measured transmission spectra are in good agreement with calculated results when material dissipation is considered.
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42.82.Et Waveguides, couplers, and arrays
42.70.-a Optical materials
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