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18 Apr 2011

Volume 98, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 98, 163701 (2011); http://dx.doi.org/10.1063/1.3579156 (3 pages)

Thomas Jetzfellner, Amir Rosenthal, K.-H. Englmeier, Alexander Dima, Miguel Ángel Araque Caballero, Daniel Razansky, and Vasilis Ntziachristos
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Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

Z. H. Liu, G. I. Ng, S. Arulkumaran, Y. K. T. Maung, and H. Zhou

Appl. Phys. Lett. 98, 163501 (2011); http://dx.doi.org/10.1063/1.3573794 (3 pages) | Cited 6 times

Online Publication Date: 18 April 2011

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The mechanisms of the temperature-dependent forward gate current transport in the atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) were investigated. In contrast to the conventional Schottky-gate AlGaN/GaN HEMT, thermionic field emission was found not to be the dominant transport mechanism for the Al2O3/AlGaN/GaN MISHEMT. Fowler–Nordheim tunneling was found to be dominant at low temperature (T<0 °C) and high electrical filed, whereas trap assistant tunneling was found to be dominant at medium electrical field and high temperature (T>0 °C).
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Remarkable synergistic effects in a mixed porphyrin dye-sensitized TiO2 film

Matthew J. Griffith, Attila J. Mozer, George Tsekouras, Ying Dong, Pawel Wagner, Klaudia Wagner, Gordon G. Wallace, Shogo Mori, and David. L. Officer

Appl. Phys. Lett. 98, 163502 (2011); http://dx.doi.org/10.1063/1.3576904 (3 pages) | Cited 5 times

Online Publication Date: 22 April 2011

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A remarkable 300% efficiency enhancement driven by a matching increase in the short circuit current was observed in a mixed porphyrin dye-sensitized solar cell constructed from two dyes in a 3:1 ratio. Absorbed photon-to-current conversion efficiency measurements indicate an improved charge injection yield for both dyes in the mixture. Several possible origins for the observed performance enhancement are discussed.
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88.40.jr Organic photovoltaics

Nanostructured three-dimensional thin film silicon solar cells with very high efficiency potential

Milan Vanecek, Oleg Babchenko, Adam Purkrt, Jakub Holovsky, Neda Neykova, Ales Poruba, Zdenek Remes, Johannes Meier, and Ulrich Kroll

Appl. Phys. Lett. 98, 163503 (2011); http://dx.doi.org/10.1063/1.3583377 (3 pages) | Cited 17 times

Online Publication Date: 22 April 2011

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We report on the experimental realization of amorphous/microcrystalline silicon tandem solar cells (Micromorph) based on our three-dimensional design. An enhancement is reached in the short-circuit current by 40%, with an excellent open-circuit voltage of 1.41V and a fill factor of 72%. We have used nanoholes or microholes dry etched into the ZnO front contact layer. Monte Carlo optical modeling shows that stable efficiency of amorphous silicon p-i-n solar cells in over 12% range is possible. For the Micromorph cells, efficiency over 15% with the thickness of amorphous Si below 200 nm and of microcrystalline Si around 500 nm is possible.
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81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
81.65.Cf Surface cleaning, etching, patterning
85.30.De Semiconductor-device characterization, design, and modeling
88.40.hj Efficiency and performance of solar cells
88.40.jj Silicon solar cells
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