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18 Apr 2011

Volume 98, Issue 16, Articles (16xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 163701 (2011); http://dx.doi.org/10.1063/1.3579156 (3 pages)

Thomas Jetzfellner, Amir Rosenthal, K.-H. Englmeier, Alexander Dima, Miguel Ángel Araque Caballero, Daniel Razansky, and Vasilis Ntziachristos
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Noncontact atomic force microscopy imaging of ferroelectric domains with functionalized tips

Mischa Nicklaus, Alain Pignolet, Catalin Harnagea, and Andreas Ruediger

Appl. Phys. Lett. 98, 162901 (2011); http://dx.doi.org/10.1063/1.3579148 (3 pages) | Cited 2 times

Online Publication Date: 18 April 2011

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We report on an imaging method for ferroelectric domains by noncontact atomic force microscopy with dipole-molecule decorated tips. The Coulombic tip-sample interaction is revealing the domains monitored as an additional topography contribution. As proof of concept, we present agreement between numerical simulations and experiments on antiparallel out-of-plane domains on LiNbO3. This contact-free imaging technique promises substantially increased lifetime of read-heads for high-density ferroelectric data storages, and high resolution and improved image quality in scanning probe microscopy on systems with surface charge density variations.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
68.37.Ps Atomic force microscopy (AFM)
07.79.Lh Atomic force microscopes

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Geert Rampelberg, Marc Schaekers, Koen Martens, Qi Xie, Davy Deduytsche, Bob De Schutter, Nicolas Blasco, Jorge Kittl, and Christophe Detavernier

Appl. Phys. Lett. 98, 162902 (2011); http://dx.doi.org/10.1063/1.3579195 (3 pages) | Cited 8 times

Online Publication Date: 19 April 2011

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Thin films of vanadium dioxide (VO2) have been grown by a low temperature atomic layer deposition process at 150 °C using tetrakis[ethylmethylamino]vanadium as a vanadium source and ozone as reactant gas. Films deposited on SiO2 were amorphous, but during a thermal treatment at 450 °C tetragonal VO2(R) was formed. During in situ x-ray diffraction measurements, the semiconductor–metal transition was observed as a reversible transition between VO2(M1) and VO2(R) near 67 °C. Correlated with this phase change, a reversible change in resistivity was observed of more than two orders of magnitude for a film of 42 nm thickness.
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71.30.+h Metal-insulator transitions and other electronic transitions
68.55.jd Thickness
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
81.05.Gc Amorphous semiconductors
73.61.Jc Amorphous semiconductors; glasses

Comparison of the interfacial and electrical properties of HfAlO films on Ge with S and GeO2 passivation

X. F. Li, X. J. Liu, W. Q. Zhang, Y. Y. Fu, A. D. Li, H. Li, and D. Wu

Appl. Phys. Lett. 98, 162903 (2011); http://dx.doi.org/10.1063/1.3581051 (3 pages) | Cited 4 times

Online Publication Date: 19 April 2011

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We report the characteristics of HfAlO films deposited on S- and GeO2-passivated Ge substrates at 150 °C by atomic layer deposition technique using Hf(NO3)4 and Al(CH3)3 as the precursors. The x-ray photoelectron spectroscopic analyses reveal that GeO2 passivation is more effective to suppress GeOx formation than S passivation. It is demonstrated that the capacitors with GeO2 passivation exhibit better electrical properties with less hysteresis, improved interface quality, and reduced leakage current. These results indicate that using GeO2 as an interfacial layer may be a promising approach for the realization of high quality Ge-based transistor devices.
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84.32.Tt Capacitors
79.60.Jv Interfaces; heterostructures; nanostructures
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