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18 Apr 2011

Volume 98, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 98, 163701 (2011); http://dx.doi.org/10.1063/1.3579156 (3 pages)

Thomas Jetzfellner, Amir Rosenthal, K.-H. Englmeier, Alexander Dima, Miguel Ángel Araque Caballero, Daniel Razansky, and Vasilis Ntziachristos
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Spin and momentum filtering of electrons on the surface of a topological insulator

Zhenhua Wu, F. M. Peeters, and Kai Chang

Appl. Phys. Lett. 98, 162101 (2011); http://dx.doi.org/10.1063/1.3581887 (3 pages) | Cited 3 times

Online Publication Date: 18 April 2011

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We investigate theoretically the transport properties of Dirac fermions on the surface of a three-dimensional topological insulator. Dirac electrons can be totally reflected in front of a magnetic/electric p-n junction. For a p-n-p structure, multiple total internal reflections at the interfaces result in the bound states in the channel, which behaves like an electronic waveguide. This p-n-p like structure exhibits spin and momentum filtering features and could be used as a spin and/or charge diode.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.25.+i Surface conductivity and carrier phenomena
05.30.Fk Fermion systems and electron gas

Low-voltage gallium–indium–zinc–oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

A. K. Tripathi, E. C. P Smits, J. B. P. H. van der Putten, M. van Neer, K. Myny, M. Nag, S. Steudel, P. Vicca, K. O’Neill, E. van Veenendaal, J. Genoe, P. Heremans, and G. H. Gelinck

Appl. Phys. Lett. 98, 162102 (2011); http://dx.doi.org/10.1063/1.3579529 (3 pages) | Cited 6 times

Online Publication Date: 19 April 2011

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In this work a technology to fabricate low-voltage amorphous gallium–indium–zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2/V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
84.30.Sk Pulse and digital circuits

Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling

D. P. Fenning, J. Hofstetter, M. I. Bertoni, S. Hudelson, M. Rinio, J. F. Lelièvre, B. Lai, C. del Cañizo, and T. Buonassisi

Appl. Phys. Lett. 98, 162103 (2011); http://dx.doi.org/10.1063/1.3575583 (3 pages) | Cited 6 times

Online Publication Date: 20 April 2011

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The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk precipitate dissolution is incomplete in wafers with high metal content, specifically ingot border material. Postdiffusion low-temperature annealing is not found to alter appreciably the size or spatial distribution of FeSi2 precipitates, although cell efficiency improves due to a decrease in iron interstitial concentration. Gettering simulations successfully model experiment results and suggest the efficacy of high- and low-temperature processing to reduce both precipitated and interstitial iron concentrations, respectively.
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88.40.jj Silicon solar cells
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
61.72.Cc Kinetics of defect formation and annealing

Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process

Bianca Lim, Vladimir V. Voronkov, Robert Falster, Karsten Bothe, and Jan Schmidt

Appl. Phys. Lett. 98, 162104 (2011); http://dx.doi.org/10.1063/1.3581215 (3 pages) | Cited 3 times

Online Publication Date: 20 April 2011

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The recovery of the light-degraded lifetime during annealing in darkness at 120 to 160 °C is examined in boron-doped p-type Czochralski silicon (Cz-Si) as well as in compensated Cz-Si codoped with boron and phosphorus. The rate constant for the recovery is found to be inversely proportional to the hole concentration for both boron-doped and compensated material. Our experiments confirm a model, in which the process of recovery is assigned to a reconfiguration of a boron–oxygen defect complex, whereby a hole is emitted. The activation energy for the recovery process is determined to be (1.36±0.06) eV.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.jj Interstitials
72.80.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
81.10.Fq Growth from melts; zone melting and refining

Minority carrier transport length of electrodeposited Cu2O in ZnO/Cu2O heterojunction solar cells

Yingchi Liu, Hubert K. Turley, John R. Tumbleston, Edward T. Samulski, and Rene Lopez

Appl. Phys. Lett. 98, 162105 (2011); http://dx.doi.org/10.1063/1.3579259 (3 pages) | Cited 12 times

Online Publication Date: 21 April 2011

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The minority carrier transport length is a critical parameter limiting the performance of inexpensive Cu2O–ZnO photovoltaic devices. In this letter, this length is estimated to be ∼ 430 nm for electrochemically deposited Cu2O by linking the cell’s carrier generation profile with back and front incident photon-to-electron conversion efficiency measurements to a one-dimensional transport model. This critical length explains the losses typically presented by these devices and appears to correlate well with the microcrystalline film structure. The consequences of the magnitude of the length on device design with the aim of improving solar cell performance are described.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
88.40.H- Solar cells (photovoltaics)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Dz II-VI semiconductors

Promising thermoelectric properties in AgxMo9Se11 compounds (3.4 ≤ x ≤ 3.9)

Tong Zhou, Bertrand Lenoir, Malika Colin, Anne Dauscher, Rabih Al Rahal Al Orabi, Patrick Gougeon, Michel Potel, and Emmanuel Guilmeau

Appl. Phys. Lett. 98, 162106 (2011); http://dx.doi.org/10.1063/1.3579261 (3 pages) | Cited 4 times

Online Publication Date: 21 April 2011

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Polycrystalline Mo9 cluster chalcogenides AgxMo9Se11 (3.4 ≤ x ≤ 3.9) have been prepared by powder metallurgy techniques, sintered by spark plasma sintering and characterized by x-ray diffraction. Their thermoelectric properties (electrical resistivity, thermopower, thermal conductivity) have been determined in the 300–800 K temperature range. The AgxMo9Se11 compounds show p-type conduction characteristics. The outstanding low lattice thermal conductivities give rise to a rather high value of the dimensionless thermoelectric figure of merit ZT of ∼ 0.65 at 800 K for x = 3.8–3.9, making this family of materials particularly promising for thermoelectric power generation applications.
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72.20.Pa Thermoelectric and thermomagnetic effects
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

The effect of electronegative difference on the electronic structure and visible light photocatalytic activity of N-doped anatase TiO2 by first-principles calculations

Dongqiu Zhao, Xiaowei Huang, Baoli Tian, Shaomin Zhou, Yuncai Li, and Zuliang Du

Appl. Phys. Lett. 98, 162107 (2011); http://dx.doi.org/10.1063/1.3579199 (3 pages) | Cited 10 times

Online Publication Date: 22 April 2011

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The effect of electronegative difference between nitrogen and oxygen on electronic properties of N-doped anatase TiO2 has been studied using first-principles calculations. The results indicate that the valence band maximum (VBM) shifts to high energy by 0.27 eV and the band gap states composed of N 2p, O 2p, and Ti 3d states are formed through the three states entering into the gap after N doping. The interactions of three states widen and delocalize the band gap states. The raised VBM and the wide band gap states can improve the visible light photocatalytic activity.
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71.20.Nr Semiconductor compounds
71.15.-m Methods of electronic structure calculations
61.72.up Other materials
82.50.Hp Processes caused by visible and UV light
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory

Min-Feng Hung, Yung-Chun Wu, and Zih-Yun Tang

Appl. Phys. Lett. 98, 162108 (2011); http://dx.doi.org/10.1063/1.3582925 (3 pages) | Cited 4 times

Online Publication Date: 22 April 2011

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Nonvolatile memory (NVM) that is based on gate-all-around (GAA) and polycrystalline silicon (poly-Si) nanowires structure with silicon nanocrystals (NCs) as the storage nodes is demonstrated. The GAA poly-Si–SiO2–Si3N4–SiO2–poly-Si (SONOS) NVMs are also fabricated and compared. The GAA NCs NVMs have a 4.2 V of threshold voltage shift at 18 V for 1 ms, and are faster than the GAA SONOS NVMs do. In reliability studies, this NVM shows superior endurance after 104 program/erase (P/E) cycles, and loses only 14% of its charges lose after ten years at 85 °C.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
84.30.Sk Pulse and digital circuits

Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy

O. Drachenko, A. Patanè, N. V. Kozlova, Q. D. Zhuang, A. Krier, L. Eaves, and M. Helm

Appl. Phys. Lett. 98, 162109 (2011); http://dx.doi.org/10.1063/1.3583378 (3 pages) | Cited 3 times

Online Publication Date: 22 April 2011

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We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1−xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities ( ∼ 1018 cm−3) at x ∼ 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs.
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73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.20.-b Electron density of states and band structure of crystalline solids
72.20.-i Conductivity phenomena in semiconductors and insulators

Influence of growth temperature on AlGaN multiquantum well point defect incorporation and photoluminescence efficiency

A. Armstrong, A. A. Allerman, T. A. Henry, and M. H. Crawford

Appl. Phys. Lett. 98, 162110 (2011); http://dx.doi.org/10.1063/1.3583448 (3 pages) | Cited 3 times

Online Publication Date: 22 April 2011

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The dependence of (Al)GaN/AlGaN multiquantum well (MQWs) optical efficiency and defect incorporation on the growth temperature (Tg) of the optically active region was investigated. Marked increase in MQW photoluminescence (PL) intensity was observed for increasing Tg. Correspondingly, increasing Tg also significantly reduced point defect incorporation under QW growth conditions, as determined by deep level optical spectroscopy. It is suggested that enhanced MQW PL with increasing Tg resulted from improved nonradiative lifetime through reduced nonradiative defect density in the MQW region.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.Fg Quantum wells
68.55.ag Semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

J. Kováč, R. Šramatý, A. Chvála, H. Sibboni, E. Morvan, M. A. DiForte-Poisson, D. Donoval, and P. Kordoš

Appl. Phys. Lett. 98, 162111 (2011); http://dx.doi.org/10.1063/1.3583458 (3 pages) | Cited 4 times

Online Publication Date: 22 April 2011

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Current transport and Schottky barrier height analysis on InAlN/GaN structures with thermally oxidized InAlN surface (800 °C, 1 min) was performed. From the current-voltage characteristics measured at various temperatures (300–820 K) and their approximation by various current mechanisms, it follows that the tunneling current dominates. Extraction of the thermionic emission yielded the Schottky barrier height of 2.43 eV at 300 K and its slight decrease with increased temperature. Optical method (photoemission current vs photon energy) allows direct barrier height evaluation without analyzing current mechanisms. Comparative analysis using optical method yielded the room-temperature barrier height of 2.57 eV. Obtained barrier heights document significant barrier enhancement due an InAlN oxidation. This result confirms the thermal oxidation procedure as a useful tool at the preparation of reliable InAlN-based devices.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
81.65.Mq Oxidation
79.40.+z Thermionic emission
79.60.Jv Interfaces; heterostructures; nanostructures

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Kazuyuki Hirama, Yoshitaka Taniyasu, and Makoto Kasu

Appl. Phys. Lett. 98, 162112 (2011); http://dx.doi.org/10.1063/1.3574531 (3 pages) | Cited 4 times

Online Publication Date: 22 April 2011

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AlGaN/GaN heterostructures with a wurtzite structure were epitaxially grown on single-crystal diamond (111) with a diamond structure by metalorganic vapor phase epitaxy. In the AlGaN/GaN heterostructure, two-dimensional electron gas with sheet carrier density of 1.0×1013 cm−2 and mobility of 730 cm2/V s was obtained. The 3-μm-gate-length AlGaN/GaN high-electron mobility transistors (HEMTs) show maximum drain current of 220 mA/mm, cut-off frequency of 3 GHz, and maximum frequency of oscillation of 7 GHz. The thermal resistance of the AlGaN/GaN HEMTs on diamond substrates is 4.1 K mm/W, the lowest ever reported for AlGaN/GaN HEMTs, due to the high thermal conductivity of single-crystal diamond.
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
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