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18 Apr 2011

Volume 98, Issue 16, Articles (16xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 163701 (2011); http://dx.doi.org/10.1063/1.3579156 (3 pages)

Thomas Jetzfellner, Amir Rosenthal, K.-H. Englmeier, Alexander Dima, Miguel Ángel Araque Caballero, Daniel Razansky, and Vasilis Ntziachristos
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ZnO nanowire-based all-optical switch with Reset-Set flip-flop function

L. X. Mu, W. S. Shi, T. P. Zhang, H. Y. Zhang, Y. Wang, G. W. She, Y. H. Gao, P. F. Wang, J. C. Chang, and S. T. Lee

Appl. Phys. Lett. 98, 163101 (2011); http://dx.doi.org/10.1063/1.3581884 (3 pages) | Cited 5 times

Online Publication Date: 18 April 2011

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An all-optical switch with Reset-Set (RS) flip-flop function has been developed by attaching a derivative of spiropyran on the surface of zinc oxide (ZnO) Nanowire. Using UV/visible irradiation and the fluorescence of spiropyran-modified ZnO nanowire as inputs—set/reset and output, RS flip-flop function can be performed on a single ZnO nanowire or a nanowire array. The configuration of the current all-optical switch represents a potential for developing small-sized all-optical devices, which could be further exploited at higher level of integration.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Using patterned H-resist for controlled three-dimensional growth of nanostructures

K. E. J. Goh, S. Chen, H. Xu, J. Ballard, J. N. Randall, and J. R. Von Ehr

Appl. Phys. Lett. 98, 163102 (2011); http://dx.doi.org/10.1063/1.3582241 (3 pages) | Cited 1 time

Online Publication Date: 18 April 2011

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We present a study addressing the effectiveness of a monolayer of hydrogen as the lithographic resist for controlled three-dimensional (3D) growth of nanostructures on the Si(100) surface. Nanoscale regions on the H-terminated Si(100) were defined by H-desorption lithography via the biased tip of a scanning tunneling microscope (STM) to create well-defined regions of surface “dangling bonds,” and the growth of 3D nanostructures within these regions was achieved using a simultaneous disilane deposition and STM H-desorption technique. We demonstrate that 3D growth is strongly confined within STM depassivated regions while unpatterned H:Si(100) regions are robust against adsorption of the precursor molecules.
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81.16.Nd Micro- and nanolithography
68.43.Nr Desorption kinetics
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
71.55.Cn Elemental semiconductors
82.45.Mp Thin layers, films, monolayers, membranes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

A geometry for optimizing nanoscale magnetic resonance force microscopy

Fei Xue (薛 飞), P. Peddibhotla, M. Montinaro, D. P. Weber, and M. Poggio

Appl. Phys. Lett. 98, 163103 (2011); http://dx.doi.org/10.1063/1.3579521 (3 pages) | Cited 1 time

Online Publication Date: 18 April 2011

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We implement magnetic resonance force microscopy (MRFM) in an experimental geometry, where the long axis of the cantilever is normal to both the external magnetic field and the rf microwire source. Measurements are made of the statistical polarization of 1H in polystyrene with negligible magnetic dissipation, gradients greater than 105 T/m within 100 nm of the magnetic tip, and rotating rf magnetic fields over 12 mT at 115 MHz. This geometry could facilitate the application of nanometer-scale MRFM to nuclear species with low gyromagnetic ratios and samples with broadened resonances, such as In spins in quantum dots.
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76.60.-k Nuclear magnetic resonance and relaxation
71.70.-d Level splitting and interactions

Electronic structures of graphane sheets with foreign atom substitutions

Yanli Wang, Yi Ding, Siqi Shi, and Weihua Tang

Appl. Phys. Lett. 98, 163104 (2011); http://dx.doi.org/10.1063/1.3574906 (3 pages) | Cited 6 times

Online Publication Date: 18 April 2011

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Using first-principles calculations, we investigate the electronic structures of the recently synthesized hydrogenated graphene, called graphane, with substitutional B, N, P, and Al atoms. We find that both the n-type and p-type substitutions can cause the semiconductor-to-metal transitions in graphane sheets. The substitutional B and Al atoms induce magnetic moments of nearby carbon atoms. Moreover, the B-substituted graphane sheets have the concentration-dependent magnetic properties, while the Al-substituted ones exhibit robust half-metallic behaviors. Our studies demonstrate that the substituted graphane sheets have potential applications in nanoelectronics and spintronics.
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71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.30.+h Metal-insulator transitions and other electronic transitions
75.30.Cr Saturation moments and magnetic susceptibilities
73.22.Pr Electronic structure of graphene
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
61.48.Gh Structure of graphene

Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells

Christopher G. Bailey, David V. Forbes, Ryne P. Raffaelle, and Seth M. Hubbard

Appl. Phys. Lett. 98, 163105 (2011); http://dx.doi.org/10.1063/1.3580765 (3 pages) | Cited 29 times

Online Publication Date: 18 April 2011

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Ten-layer InAs/GaAs quantum dot (QD) solar cells exhibiting enhanced short circuit current (Jsc) and open circuit voltage (Voc) comparable to a control GaAs p-i-n solar cell are reported. 1 sun Jsc is enhanced by 3.5% compared to that of the GaAs control, while the Voc is maintained at 994 mV. Results were achieved using optimized InAs QD coverage and a modified strain balancing technique, resulting in a high QD density (3.6×1010 cm−2), uniform QD size (4×16 nm2), and low residual strain (103 ppm). This enhanced Voc is a promising result for the future of InAs QD-enhanced GaAs solar cells.
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81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
88.40.J- Types of solar cells

Nanomanipulation of field emission measurement for vacuum nanodiodes based on uniform silicon nanowire emitters

Pai-Yen Chen, Tsung-Chieh Cheng, Jiann Shieh, and Yun-Cin Luo

Appl. Phys. Lett. 98, 163106 (2011); http://dx.doi.org/10.1063/1.3581036 (3 pages) | Cited 3 times

Online Publication Date: 19 April 2011

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We performed in situ field emission (FE) measurements on vacuum nanodiodes with a dynamically tunable nanogap, ranging from 20 to 150 nm. The nanogap was precisely controlled by a scanning tungsten probe (anode) attached on the nanomotor, thereby allowing the accurate and flexible three-dimensional FE characterization for silicon nanowire emitters (cold cathode). Our experimental results show that the local field enhancement factor and the onset voltage are sensitively dependent on the nanogap size, agreeing quite well with the theoretical fitting curve. Moreover, efficient and low-power driving FE nanodevices are envisioned by aggressively reducing the nanogap and squeezing nanodiodes.
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85.30.Kk Junction diodes

Multiple negative differential resistance and the modulation in a nanotubelike fullerene D5h(1)-C90

Y. D. Guo, X. H. Yan, and Y. Xiao

Appl. Phys. Lett. 98, 163107 (2011); http://dx.doi.org/10.1063/1.3582238 (3 pages) | Cited 1 time

Online Publication Date: 20 April 2011

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We have preformed a first-principle calculation on the electronic transport properties of a recently synthesized nanotubelike fullerene D5h(1)-C90. One finds three negative differential resistance regions in the I-V curve, which could be modulated by gate voltage and contact configuration. Further analysis showed that, the charge transfer and molecule-electrode coupling, induced by both bias and gate voltages, are responsible for the observed phenomena.
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73.63.Fg Nanotubes
73.22.-f Electronic structure of nanoscale materials and related systems
72.20.Ht High-field and nonlinear effects
71.20.Tx Fullerenes and related materials; intercalation compounds
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.70.-d Level splitting and interactions

Efficient nonradiative energy transfer from InGaN/GaN nanopillars to CdSe/ZnS core/shell nanocrystals

Sedat Nizamoglu, Burak Guzelturk, Dae-Woo Jeon, In-Hwan Lee, and Hilmi Volkan Demir

Appl. Phys. Lett. 98, 163108 (2011); http://dx.doi.org/10.1063/1.3562035 (3 pages) | Cited 2 times

Online Publication Date: 20 April 2011

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In this study, we propose and demonstrate efficient electron-hole pair injection from InGaN/GaN multiple quantum well nanopillars (MQW-NPs) to CdSe/ZnS core/shell nanocrystal quantum dots (NQDs) via Förster-type nonradiative energy transfer. For that we hybridize blue-emitting MQW-NPs with red-emitting NQDs and the resultant exciton transfer reaches a maximum rate of (0.192 ns)−1 and a maximum efficiency of 83.0%. By varying the effective bandgap of core/shell NQDs, we conveniently control and tune the excitonic energy transfer rate for these NQD integrated hybrids, and our measured and computed exciton transfer rates are found to be in good agreement for all hybrid cases.
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78.47.da Excited states
73.21.La Quantum dots
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
73.22.Lp Collective excitations
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Field emission from single and few-layer graphene flakes

S. Santandrea, F. Giubileo, V. Grossi, S. Santucci, M. Passacantando, T. Schroeder, G. Lupina, and A. Di Bartolomeo

Appl. Phys. Lett. 98, 163109 (2011); http://dx.doi.org/10.1063/1.3579533 (3 pages) | Cited 6 times

Online Publication Date: 20 April 2011

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We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped with nanoprobes which allowed local measurement of the field emission current. We achieved field emission currents up to 1 μA from the flat part of graphene flakes at applied fields of few hundred volt per micrometer. We found that the emission process is stable over a period of several hours and that it is well described by a Fowler–Nordheim model for currents over five orders of magnitude.
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79.70.+q Field emission, ionization, evaporation, and desorption

Quadrupole plasmon resonance mode in nanocrescent/nanodisk structure:Local field enhancement and tunability in the visible light region

Y. Zhang, T. Q. Jia, D. H. Feng, and Z. Z. Xu

Appl. Phys. Lett. 98, 163110 (2011); http://dx.doi.org/10.1063/1.3582922 (3 pages) | Cited 3 times

Online Publication Date: 21 April 2011

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We propose a metallic nanostructure consisting of a nanodisk in a nanocrescent. At the quadrupole plasmon resonance wavelengths of the nanocrescent/nanodisk structures, the local electric field amplitudes at the crescent tips are 15 times higher than those of the single nanocrescents. In addition, the quadrupole resonance wavelengths are tunable in the visible region while the peak widths keep less than 5 nm. We study the mechanisms of the local field enhancement (LFE), and find that the coupling between the quadrupole resonance modes of the nanogap and the nanocrescent result into the high LFE factor.
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73.22.Lp Collective excitations
78.40.Kc Metals, semimetals, and alloys
78.66.Bz Metals and metallic alloys

Physical model for the growth of amorphous carbon nanotubes

T. K. Zhao, G. M. Li, L. H. Liu, Y. N. Liu, and T. H. Li

Appl. Phys. Lett. 98, 163111 (2011); http://dx.doi.org/10.1063/1.3583445 (3 pages)

Online Publication Date: 22 April 2011

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A physical model for the growth mechanism of amorphous carbon nanotubes (ACNTs) (namely, “open tips growth and carbon clusters (Cn,n>6) adding”) has been proposed in this letter. Based on Tersoff–Brenner [Phys. Rev. B 37, 6991 (1988) and Phys. Rev. B 42, 9458 (1990)] and Lennard-Jones potential energy functions, a mathematic relationship for the growth of ACNTs was established. The predicted diameters of ACNTs from this physical model were in the range of 5–25 nm. The predicted values were in agreement with the experimental measurements in the range of 7–20 nm.
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61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
61.46.Fg Nanotubes

Advanced core/multishell germanium/silicon nanowire heterostructures: Morphology and transport

S. A. Dayeh, A. V. Gin, and S. T. Picraux

Appl. Phys. Lett. 98, 163112 (2011); http://dx.doi.org/10.1063/1.3574537 (3 pages) | Cited 6 times

Online Publication Date: 22 April 2011

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A precise level of control over morphology and transport in germanium/silicon core/multishell semiconductor nanowires is attained by interface engineering. Epitaxial in situ growth of such advanced heterostructures is achieved, enabling smooth and crystalline shell quality without ex situ thermal or chemical treatment. Transport simulation predicts such heterostructures with engineered energy band-edges will exhibit enhanced on-currents and transconductances over traditional device designs. Based on this synthesis approach, a 2× improvement in experimental hole mobility, transconductance, and on-currents is demonstrated for heterostructures with smooth surface morphologies compared to those with rough surface morphologies and record normalized on-currents for p-type field effect transistors are achieved.
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81.07.Gf Nanowires
85.30.Tv Field effect devices
68.65.La Quantum wires (patterned in quantum wells)
68.35.bg Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.63.Nm Quantum wires

Fundamental design paradigms for systems of three interacting magnetic nanodiscs

D. M. Forrester, K. E. Kürten, and F. V. Kusmartsev

Appl. Phys. Lett. 98, 163113 (2011); http://dx.doi.org/10.1063/1.3581048 (3 pages)

Online Publication Date: 22 April 2011

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The magnetic properties of a system of three interacting magnetic elliptical disks are examined. For the various levels of uniaxial anisotropy investigated a complicated series of phase transitions exist. These are marked by the critical lines of stability that are demonstrated in an applied magnetic field plane diagram.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
75.75.-c Magnetic properties of nanostructures
75.50.Tt Fine-particle systems; nanocrystalline materials
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.30.Gw Magnetic anisotropy
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