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18 Apr 2011

Volume 98, Issue 16, Articles (16xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 163701 (2011); http://dx.doi.org/10.1063/1.3579156 (3 pages)

Thomas Jetzfellner, Amir Rosenthal, K.-H. Englmeier, Alexander Dima, Miguel Ángel Araque Caballero, Daniel Razansky, and Vasilis Ntziachristos
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The cold and atmospheric-pressure air surface barrier discharge plasma for large-area sterilization applications

Dacheng Wang, Di Zhao, Kecheng Feng, Xianhui Zhang, Dongping Liu, and Size Yang

Appl. Phys. Lett. 98, 161501 (2011); http://dx.doi.org/10.1063/1.3582923 (3 pages) | Cited 11 times

Online Publication Date: 18 April 2011

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This letter reports a stable air surface barrier discharge device for large-area sterilization applications at room temperature. This design may result in visually uniform plasmas with the electrode area scaled up (or down) to the required size. A comparison for the survival rates of Escherichia coli from air, N2 and O2 surface barrier discharge plasmas is presented, and the air surface plasma consisting of strong filamentary discharges can efficiently kill Escherichia coli. Optical emission measurements indicate that reactive species such as O and OH generated in the room temperature air plasmas play a significant role in the sterilization process.
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87.85.-d Biomedical engineering
52.77.-j Plasma applications
52.75.-d Plasma devices
52.80.-s Electric discharges

Mask undercut in deep silicon etch

I. Saraf, M. Goeckner, Brian Goodlin, Karen Kirmse, and L. Overzet

Appl. Phys. Lett. 98, 161502 (2011); http://dx.doi.org/10.1063/1.3579542 (3 pages) | Cited 2 times

Online Publication Date: 19 April 2011

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Mask undercut in the time-multiplexed deep silicon etch process is becoming an increasingly significant issue as it is used to produce smaller critical dimension features. Models of the process must contain the necessary physics to reproduce the dependencies of mask undercut. We argue that the reason undercut develops is the dependence of the deposition step on ion flux. Our experiments of C4F8 (and CHF3 not shown) plasmas show that the film growth is dominantly ion-enhanced. This leads naturally to a mask undercut that increases in time. A more neutral flux dominant deposition step would result in reduced mask undercut.
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85.40.Hp Lithography, masks and pattern transfer
81.65.Cf Surface cleaning, etching, patterning
85.40.Sz Deposition technology

The susceptibility diagrams of a multipactor discharge on a dielectric: Effects of rf magnetic field

A. G. Sazontov, V. E. Nechaev, and N. K. Vdovicheva

Appl. Phys. Lett. 98, 161503 (2011); http://dx.doi.org/10.1063/1.3578397 (3 pages) | Cited 1 time

Online Publication Date: 21 April 2011

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A statistical theory is constructed to evaluate the multipactor induced breakdown on a dielectric. The calculation employs the integral equation allowing predicting the threshold of multipactor growth. It is found that the action of the rf magnetic field considerably changes the shape of the upper susceptibility curve and, depending on the secondary electron yield, leads either to rising of the slope of the upper boundary or to its complete elimination. The critical value of the secondary yield above which the region of multipactor existence is not restricted from above by any limiting rf electric field strength is estimated.
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84.40.Az Waveguides, transmission lines, striplines
84.32.Dd Connectors, relays, and switches

Modeling study on pressure dependence of plasma structure and formation in 110 GHz microwave air breakdown

Qianhong Zhou and Zhiwei Dong

Appl. Phys. Lett. 98, 161504 (2011); http://dx.doi.org/10.1063/1.3583452 (3 pages) | Cited 3 times

Online Publication Date: 22 April 2011

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Recent experimental studies of 110 GHz microwave air volume breakdown have shown that as pressure is decreased from atmosphere to a few torr, the discharge transitions from a well-defined array to a smeared-out array and finally to a diffuse plasma. In this letter, a two-dimensional model coupling plasma fluid equations and Maxwell equations is used to simulate the pressure dependence of plasma structure and formation under conditions similar to the experiments. The modeling pressure dependence of plasma structures in H plane and E plane is qualitatively consistent with the experimental observation. The quantitative discrepancy between modeling and experimental results is explained. The simulations allow a good understanding of plasma structure at different pressures in microwave volume breakdown.
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52.80.Pi High-frequency and RF discharges
52.50.Dg Plasma sources
52.25.Dg Plasma kinetic equations
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