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25 Apr 2011

Volume 98, Issue 17, Articles (17xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 171102 (2011); http://dx.doi.org/10.1063/1.3582035 (3 pages)

Shigeru Nakayama, Satomi Ishida, Satoshi Iwamoto, and Yasuhiko Arakawa
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Comment on “Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment” [ Appl. Phys. Lett. 97, 203508 (2010) ]

Yow-Jon Lin and Chia-Lung Tsai

Appl. Phys. Lett. 98, 176101 (2011); http://dx.doi.org/10.1063/1.3584000 (1 page)

Online Publication Date: 27 April 2011

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Abstract Unavailable
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81.05.Hd Other semiconductors
81.07.Gf Nanowires
85.30.-z Semiconductor devices
52.77.-j Plasma applications
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Response to “Comment on ‘Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment’” [ Appl. Phys. Lett. 98, 176101 (2011) ]

Jin-Woo Park, Hong-Koo Baik, Taekyung Lim, and Sanghyun Ju

Appl. Phys. Lett. 98, 176102 (2011); http://dx.doi.org/10.1063/1.3584002 (1 page)

Online Publication Date: 27 April 2011

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Abstract Unavailable
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81.65.-b Surface treatments
85.30.Tv Field effect devices
61.72.jd Vacancies
61.80.Jh Ion radiation effects
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