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Applied Physics Letters / Volume 98 / Issue 18 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 98, 183102 (2011); http://dx.doi.org/10.1063/1.3582614 (3 pages)

Nano-sized light emitting diodes by near field laser exposure

Francesca Intonti1, Vitantonio Matarazzo1, Ateeq Nasir2, Oleg Makarovsky2, Richard Campion2, Amalia Patanè2, Santosh Kumar3, Armando Rastelli3, Oliver G. Schmidt3, and Massimo Gurioli1

1Department of Physics and LENS, University of Florence, Via Sansone 1, 50019 Sesto Fiorentino, Italy
2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
3Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden, Germany

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(Received 24 March 2011; accepted 5 April 2011; published online 2 May 2011)

We report a postfabrication process for the realization of nanosized light emitting diodes. The method is based on the exposure of the device to an Ar+ laser through an aperture near field optical microscope and can produce a large (>100 fold) increase in the electroluminescence within a near field hot spot as small as 440 nm. A study of morphological, photoluminescence and electroluminescence properties highlights the interplay between oxidation, annealing, and ablation processes for various laser exposure conditions.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, annealing, electroluminescence, gallium arsenide, III-V semiconductors, laser beam effects, light emitting diodes, nanoelectronics, optical microscopy, oxidation, photoluminescence, p-i-n diodes, resonant tunnelling diodes, semiconductor quantum wells

PACS

  • 85.60.Jb

    Light-emitting devices

  • 85.30.Kk

    Junction diodes

  • 85.30.Mn

    Junction breakdown and tunneling devices (including resonance tunneling devices)

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3582614

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    S. Vignolini, F. Riboli, F. Intonti, D. S. Wiersma, L. H. Li, L. Balet, M. Francardi, A. Gerardino, A. Fiore, and M. Gurioli, Appl. Phys. Lett. 97, 063101 (2010)APPLAB000097000006063101000001.

    A. Rastelli, A. Ulhaq, S. Kiravittaya, L. Wang, A. Zrenner, and O. G. Schmidt, Appl. Phys. Lett. 90, 073120 (2007)APPLAB000090000007073120000001.

    H. S. Lee, S. Kiravittaya, S. Kumar, J. D. Plumhof, L. Balet, L. H. Li, M. Francardi, A. Gerardino, A. Fiore, A. Rastelli, and O. G. Schmidt, Appl. Phys. Lett. 95, 191109 (2009)APPLAB000095000019191109000001.

    E. Betzig, J. K. Trautman, R. Wolfe, E. M. Gyorgy, P. L. Finn, M. H. Kryder, and C. -H. Chang, Appl. Phys. Lett. 61, 142 (1992)APPLAB000061000002000142000001.

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    K. W. Edmonds, P. Boguslawski, K. Y. Wang, R. P. Campion, S. N. Novikov, N. R. S. Farley, B. L. Gallagher, C. T. Foxon, M. Sawicki, T. Dietl, M. B. Nardelli, and J. Bernholc, Phys. Rev. Lett. 92, 037201 (2004).


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