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Applied Physics Letters / Volume 98 / Issue 19 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 98, 191111 (2011); http://dx.doi.org/10.1063/1.3589975 (3 pages)

In-plane manipulation of quantum dots in high quality laterally contacted micropillar cavities

J. Beetz, C. Kistner, M. Lermer, C. Schneider, S. Reitzenstein, S. Höfling, M. Kamp, and A. Forchel

Technische Physik and Wilhelm Conrad Röntgen Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

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(Received 9 February 2011; accepted 20 April 2011; published online 12 May 2011)

We report on the realization and study of laterally contacted quantum dot (QD)-micropillars. The lateral contacts are formed by ion beam induced deposition and allow for the application of in-plane electric fields. The processing was optimized to preserve high optical quality of the QD-micropillars and to minimize detrimental leakage currents while providing a good electrical control of the QD properties. Under variation of the applied voltage we are able to Stark-tune the emission energy of the QDs up to 0.12 meV and to reduce their fine structure splitting by up to a factor of 5.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

electrical contacts, fine structure, gallium arsenide, III-V semiconductors, indium compounds, ion beam assisted deposition, leakage currents, microcavities, micro-optics, nanophotonics, photoluminescence, semiconductor quantum dots, Stark effect

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3589975

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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