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Applied Physics Letters / Volume 98 / Issue 2 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 98, 022109 (2011); http://dx.doi.org/10.1063/1.3543846 (3 pages)

Charged basal stacking fault scattering in nitride semiconductors

Aniruddha Konar, Tian Fang, Nan Sun, and Debdeep Jena

Department of Physics and Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

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(Received 24 November 2010; accepted 29 December 2010; published online 14 January 2011)

A theory of charge transport in semiconductors showing built-in polarization (polar) is developed in the presence of basal stacking faults. The theory is based on quantum tunneling in conjunction with the semiclassical description of diffusive charge transport. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in gallium nitride films consisting of a large number basal stacking faults, and the result is compared with experimental data.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, semiconductor thin films, stacking faults, tunnelling, wide band gap semiconductors

PACS

  • 73.61.Ey

    III-V semiconductors

  • 72.20.Dp

    General theory, scattering mechanisms

  • 72.10.Fk

    Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3543846

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. McLaurin, T. E. Mates, F. Wu, and J. S. Speck, J. Appl. Phys. 100, 063707 (2006)JAPIAU000100000006063707000001.

    C. Stampfl and C. G. Van de Walle, Phys. Rev. B 57, R15052 (1998).

    C. Erginsoy, Phys. Rev. 79, 1013 (1950).

    Y. Yan, G. M. Dalpian, M. M. Al-Jassim, and S. Wei, Phys. Rev. B 70, 193206 (2004).


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