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Appl. Phys. Lett. 98, 022503 (2011); http://dx.doi.org/10.1063/1.3543843 (3 pages)

Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices

L. Herrera Diez1, M. Konuma1, E. Placidi2, F. Arciprete2, A. W. Rushforth3, R. P. Campion3, B. L. Gallagher3, J. Honolka1, and K. Kern1

1Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, Stuttgart 70569, Germany
2Dipartimento di Fisica, Università di Roma “Tor Vergata”, Roma I-00133, Italy and CNR-INFM, Via della Ricerca Scientifica 1, Roma I-00133, Italy
3School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom

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(Received 26 November 2010; accepted 27 December 2010; published online 14 January 2011)

We present the manipulation of magnetic and electrical properties of (Ga,Mn)As via the adsorption of dye-molecules as a step toward the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the (Ga,Mn)As/fluorescein system with respect to (Ga,Mn)As. Upon exposure to visible light a shift in Curie temperature toward higher values as well as a reduction of the electrical resistance and the coercive field can be achieved. This points toward a hole quenching effect at the molecule-(Ga,Mn)As interface which is susceptible to light exposure.

© 2011 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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