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Applied Physics Letters / Volume 98 / Issue 2 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 98, 023115 (2011); http://dx.doi.org/10.1063/1.3540680 (3 pages)

Embedded voids approach for low defect density in epitaxial GaN films

P. Frajtag1, N. A. El-Masry1, N. Nepal2,3, and S. M. Bedair2

1Department of Material Science and Engineering, NCSU, Raleigh, North Carolina, 27695 USA
2Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina, 27695 USA
3Division of Electronics Science & Technological, U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, D.C. 20375, USA

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(Received 31 August 2010; accepted 20 December 2010; published online 14 January 2011)

We have developed a technique for defect reduction in GaN epitaxial films grown on sapphire substrates. This technique relies on the generation of high densities of embedded microvoids ( ∼ 108/cm2), a few microns long and less than a micron in diameter. These voids are located near the sapphire substrate, where high densities of dislocations are present. Network of embedded voids offer free surfaces that act as dislocation sinks or termination sites for the dislocations generated at the GaN/sapphire interface. Both transmission electron and atomic force microscopy results confirm the uniform reduction of the dislocation density by two orders of magnitude.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

atomic force microscopy, dislocation density, gallium compounds, III-V semiconductors, semiconductor epitaxial layers, transmission electron microscopy, voids (solid), wide band gap semiconductors

PACS

  • 81.05.Ea

    III-V semiconductors

  • 68.55.ag

    Semiconductors

  • 68.37.Ps

    Atomic force microscopy (AFM)

  • 68.37.Lp

    Transmission electron microscopy (TEM)

  • 61.72.Qq

    Microscopic defects (voids, inclusions, etc.)

  • 61.72.Ff

    Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3540680

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

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