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16 May 2011

Volume 98, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 98, 201101 (2011); http://dx.doi.org/10.1063/1.3590716 (3 pages)

Martynas Beresna, Mindaugas Gecevičius, Peter G. Kazansky, and Titas Gertus
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Laterally proximized aluminum tunnel junctions

J. V. Koski, J. T. Peltonen, M. Meschke, and J. P. Pekola

Appl. Phys. Lett. 98, 203501 (2011); http://dx.doi.org/10.1063/1.3590922 (3 pages)

Online Publication Date: 16 May 2011

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This letter presents experiments on junctions fabricated by a technique that enables the use of high-quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to diminish the superconductivity of an aluminum dot through a clean lateral connection to a normal metal electrode. To demonstrate the effectiveness of this method, fully normal-state single electron transistors (SETs) and normal metal-insulator-superconductor (NIS) junctions applying proximized Al junctions were fabricated. The transport characteristics of the junctions were similar to those obtained from standard theoretical models of regular SETs and NIS junctions.
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74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
74.55.+v Tunneling phenomena: single particle tunneling and STM
85.25.-j Superconducting devices
85.35.Gv Single electron devices

Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer

Yung-Hsien Wu, Min-Lin Wu, Rong-Jhe Lyu, Jia-Rong Wu, Lun-Lun Chen, and Chia-Chun Lin

Appl. Phys. Lett. 98, 203502 (2011); http://dx.doi.org/10.1063/1.3590923 (3 pages) | Cited 1 time

Online Publication Date: 16 May 2011

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By adopting an amorphous Y2O3 passivation layer, which provides a wide band gap and well passivates Ge surface without the presence of GeOx, a high-permittivity (κ) crystalline ZrO2/Y2O3 stack was explored as the gate dielectric for Ge metal-oxide-semiconductor (MOS) devices on Si substrate. The crystalline ZrO2 is a Ge stabilized tetragonal/cubic dielectric with the κ value of 36.1 and was formed by depositing a ZrO2/Ge/ZrO2 laminate and a subsequent 500 °C annealing. The high-κ crystalline ZrO2/Y2O3 gate stack shows promising electrical characteristics in terms of low interface trap density of 5.8×1011 cm−2 eV−1, negligible hysteresis, and leakage current of 5.6×10−4 A/cm2 at gate bias of flatband voltage (VFB) 1 V for equivalent oxide thickness of 1.13 nm. This gate stack not only demonstrates the eligibility for advanced Ge MOS devices but introduces a more reliable process to form a high-κ crystalline gate dielectric.
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84.32.Tt Capacitors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.65.Rv Passivation

Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green’s function method with real space approach

Youngki Yoon, Dmitri E. Nikonov, and Sayeef Salahuddin

Appl. Phys. Lett. 98, 203503 (2011); http://dx.doi.org/10.1063/1.3589365 (3 pages) | Cited 3 times

Online Publication Date: 16 May 2011

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We report self-consistent NEGF transport simulation results in graphene nanoribbon transistors with phonon scattering in real space. Unlike mode space approach, this technique can account for interband scattering in addition to intraband scattering. We show a seamless transition from ballistic to dissipative transport by varying channel length over a wide range. We find acoustic phonon (AP) scattering to be the dominant scattering mechanism within the relevant range of voltage bias. Optical phonon scattering is significant only when a large gate voltage is applied. In a longer channel device, the contribution of AP scattering to the dc becomes more significant.
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85.30.Tv Field effect devices

Plasma resonances in a gated semiconductor slab of arbitrary thickness

H. Marinchio, J.-F. Millithaler, C. Palermo, L. Varani, L. Reggiani, P. Shiktorov, E. Starikov, and V. Gružinskis

Appl. Phys. Lett. 98, 203504 (2011); http://dx.doi.org/10.1063/1.3592734 (3 pages)

Online Publication Date: 17 May 2011

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We present an analytical model suitable for the study of the plasma modes in gated semiconductor slabs of arbitrary thickness. A pseudo-two-dimensional Poisson equation allows us to consider both transverse and longitudinal electric field variations. We calculate the dispersion relation demonstrating the dispersive nature of the slab. We express the frequencies of the plasma modes appearing in a cavity. A transition from a two-dimensional to a three-dimensional behavior is revealed when the transverse dimension of the device or the order of modes grow. These analytical results show a good agreement with Monte Carlo calculations of the voltage noise spectrum.
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85.30.-z Semiconductor devices
72.30.+q High-frequency effects; plasma effects

Far-infrared and terahertz lasing based upon resonant and interband tunneling in InAs/GaSb heterostructures

W.-D. Zhang and D. L. Woolard

Appl. Phys. Lett. 98, 203505 (2011); http://dx.doi.org/10.1063/1.3590273 (3 pages) | Cited 1 time

Online Publication Date: 17 May 2011

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A far-infrared lasing device based upon conduction-band to heavy-hole level interband transitions within a double-barrier broken-gap structure is presented. The upper conduction-band level is populated by resonant tunneling electron injection, and the lower heavy-hole state is depopulated by ultrafast valence-band electron interband tunneling. Significant optical gain exceeding 103 cm−1 for operation in the frequency range 1.9–3.4 THz is predicted from a Kane multiband model based study of an unoptimized structure.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals

Paolo Cardile, Giorgia Franzò, Roberto Lo Savio, Matteo Galli, Thomas F. Krauss, Francesco Priolo, and Liam O’ Faolain

Appl. Phys. Lett. 98, 203506 (2011); http://dx.doi.org/10.1063/1.3580613 (3 pages) | Cited 1 time

Online Publication Date: 17 May 2011

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We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018/cm3, are acceptable for practical devices with Q factors as high as 4×104.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
42.70.Qs Photonic bandgap materials
61.72.U- Doping and impurity implantation
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

Nonlinear vibration energy harvester using diamagnetic levitation

L. Liu and F. G. Yuan

Appl. Phys. Lett. 98, 203507 (2011); http://dx.doi.org/10.1063/1.3583675 (3 pages) | Cited 1 time

Online Publication Date: 17 May 2011

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This letter proposes a nonlinear vibration energy harvester based on stabilized magnetic levitation using diamagnetic. Restoring forces induced by the magnetic field in harvesting vibration energy is employed instead of the forces introduced by conventional mechanical suspensions; therefore dissipation of vibration energy into heat through mechanical suspensions is eliminated. The core of the design consists of two spiral coils made of diamagnetic materials, which serve dual purposes: providing nonlinear restoring force and harnessing eddy current to power external circuits. From the theoretical analysis presented, the proposed harvester has the potential to provide wideband power outputs in low frequency range.
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84.60.-h Direct energy conversion and storage

Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

Sungsik Lee, Khashayar Ghaffarzadeh, Arokia Nathan, John Robertson, Sanghun Jeon, Changjung Kim, I-Hun Song, and U-In Chung

Appl. Phys. Lett. 98, 203508 (2011); http://dx.doi.org/10.1063/1.3589371 (3 pages) | Cited 5 times

Online Publication Date: 18 May 2011

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The electron conduction mechanism in the above-threshold regime in amorphous oxide semiconductor thin film transistors is shown to be controlled by percolation and trap-limited conduction. The band tail state slope controls the field effect mobility, while the average spatial coherence length and potential fluctuation control percolation conduction. In these limits, the field effect mobility is found to follow a power law, from which a universal mobility versus carrier concentration dependence is extracted.
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85.30.Tv Field effect devices

High electron mobility transistors on plastic flexible substrates

Wayne Chen, T. L. Alford, T. F. Kuech, and S. S. Lau

Appl. Phys. Lett. 98, 203509 (2011); http://dx.doi.org/10.1063/1.3593006 (3 pages) | Cited 1 time

Online Publication Date: 19 May 2011

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The double-flip transfer of indium phosphide (InP) based transistors onto plastic flexible substrates was demonstrated. Modulation doped field effect transistor layers, epitaxially grown on InP bulk substrates, were transferred onto sapphire using a masked ion-cutting process. Following layer transfer, transistors were fabricated at low temperatures ( ≤ 150 °C). The device structure was then bonded to flexible substrate, and laser ablation was used to separate the initial bond. The transferred transistors were characterized and exhibited high field-effect mobility (μaverage ∼ 2800 cm2 V−1 s−1).
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85.30.Tv Field effect devices
81.05.Ea III-V semiconductors
68.55.ag Semiconductors
73.61.Ey III-V semiconductors
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