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23 May 2011

Volume 98, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 212504 (2011); http://dx.doi.org/10.1063/1.3593371 (3 pages)

K. Okumura, T. Ishikura, M. Soda, T. Asaka, H. Nakamura, Y. Wakabayashi, and T. Kimura
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Polarized photoluminescence from single wurtzite InP/InAs/InP core-multishell nanowires

Yasuaki Masumoto, Yuuki Hirata, Premila Mohan, Junichi Motohisa, and Takashi Fukui

Appl. Phys. Lett. 98, 211902 (2011); http://dx.doi.org/10.1063/1.3592855 (3 pages) | Cited 2 times

Online Publication Date: 23 May 2011

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The photoluminescence from single InP/InAs/InP core-multishell nanowires (CMNs) was highly linearly polarized in perpendicular to the nanowire long axis. Taking account of dielectric confinement of light field, we found the internal optical dipole squared perpendicular to the nanotube long axis d0x2 is larger than that parallel to the axis d0z2 by two orders of magnitude. With the increase in the thickness of InAs nanotubes, the ratio β = d0x2/d0z2 increases. This strong anisotropy in β comes from nearly perfect wurtzite structure of InP/InAs/InP CMNs and small inclusion of pz-character into the Γ7(B)-hole state.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.67.Uh Nanowires
77.22.Ej Polarization and depolarization

Enhanced visible-light photocatalytic activity of anatase TiO2 through N and S codoping

Lichao Jia, Congcong Wu, Yuanyuan Li, Song Han, Zongbao Li, Bo Chi, Jian Pu, and Li Jian

Appl. Phys. Lett. 98, 211903 (2011); http://dx.doi.org/10.1063/1.3593147 (3 pages) | Cited 13 times

Online Publication Date: 23 May 2011

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The density of states and optical properties of N, S, and (N, S)-doped anatase TiO2 are calculated based on the density functional theory. The results indicate that the doping S atoms occupy the Ti-atom sites in anatase TiO2 lattice. The mixing of O 2p, N 2p, S 3p, and Ti 3d states in the forbidden gap of (N, S)-codoped TiO2 can result in the higher visible-light photocatalytic activities than those monodoped TiO2. For comparison, (N, S)-codoped TiO2 was also synthesized by one-step hydrothermal method, and the optical absorption spectra obtained by experiments verified the reliability of our calculation.
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78.40.Fy Semiconductors
71.20.Nr Semiconductor compounds
82.50.Hp Processes caused by visible and UV light
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
81.05.Hd Other semiconductors
81.10.Dn Growth from solutions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Interfacial mixing during annealing of zinc oxide nanoparticle junctions

Ming Hu, Konstantinos P. Giapis, and Dimos Poulikakos

Appl. Phys. Lett. 98, 211904 (2011); http://dx.doi.org/10.1063/1.3593487 (3 pages) | Cited 1 time

Online Publication Date: 23 May 2011

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The process of forming a junction between crystalline zinc oxide (ZnO) nanoparticles during pulsed thermal annealing in liquid tetradecane is studied using molecular dynamics simulation. Pairs of equal and unequal size particles are considered with emphasis on neck growth and atom mixing. The contact area and interface width of the junction are found to increase with heat pulse power albeit at different rates. The results suggest that it is possible to increase the junction area without significant mixing of atoms across the junction interface by tailoring the heat pulse power.
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81.07.Wx Nanopowders
61.72.Cc Kinetics of defect formation and annealing
81.05.Dz II-VI semiconductors
64.75.Ef Mixing
68.35.Ct Interface structure and roughness
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Generation of high spatial frequency ripples on silicon under ultrashort laser pulses irradiation

R. Le Harzic, D. Dörr, D. Sauer, F. Stracke, and H. Zimmermann

Appl. Phys. Lett. 98, 211905 (2011); http://dx.doi.org/10.1063/1.3593493 (3 pages) | Cited 6 times

Online Publication Date: 23 May 2011

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Periodic high spatial frequency ripples structures have been generated in silicon under femtosecond laser pulses irradiation. The period of the ripples is wavelength dependent. It increases from 110 up to 160 nm when the wavelength varies from 700 to 950 nm, respectively. We propose a refined model of the second harmonic generation ripples spacing theory Λ = λ/2nλ∗ taking into account the modified femtosecond laser excited silicon refractive index n∗ related to the Drude model. Good agreement is found between experimental results and the presented revisited model.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

The grain size and temperature dependence of the thermal conductivity of polycrystalline, tetragonal yttria-stabilized zirconia

Andi M. Limarga and David R. Clarke

Appl. Phys. Lett. 98, 211906 (2011); http://dx.doi.org/10.1063/1.3593383 (3 pages) | Cited 5 times

Online Publication Date: 24 May 2011

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The thermal conductivity of optically transparent, yttria-stabilized tetragonal zirconia having a range of grain sizes from 100 to 180 nm has been measured from just below its approximate Debye temperature up to 1000 °C. It is found that the grain size dependence is most marked at room temperature, decreasing with increasing temperature until being indistinguishable at the highest temperatures. The Kapitza thermal resistance of the grain boundaries is found to be almost independent of temperature, with a value of Rk = 4.5±0.5×10−9 m2K/W and an estimated grain boundary phonon transparency of ∼ 0.9.
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66.70.Lm Other systems such as ionic crystals, molecular crystals, nanotubes, etc.
61.72.Mm Grain and twin boundaries
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Observation of anomalous acoustic phonon dispersion in SrTiO3 by broadband stimulated Brillouin scattering

S. Brivio, D. Polli, A. Crespi, R. Osellame, G. Cerullo, and R. Bertacco

Appl. Phys. Lett. 98, 211907 (2011); http://dx.doi.org/10.1063/1.3593488 (3 pages) | Cited 2 times

Online Publication Date: 25 May 2011

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Femtosecond laser pulses have been used to generate and detect longitudinal acoustic phonons along the [001] direction of SrTiO3 single crystals coated with a thin absorbing layer. Two-dimensional maps of the reflectivity as a function of probe wavelength and time delay display persistent oscillations, from which the frequency-dependent group velocity of the photoinduced strain pulse can be directly measured. By applying the theory of stimulated Brillouin scattering we found that the longitudinal sound speed varies from 7900 to 7520 m/s in the 60–74 rad μm−1 wave vector range, thus indicating a clear deviation from a linear phonon dispersion relationship.
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63.20.dd Measurements
62.65.+k Acoustical properties of solids
78.20.Pa Photoacoustic effects
78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.65.Es Stimulated Brillouin and Rayleigh scattering
78.40.Ha Other nonmetallic inorganics

Narrow-band acoustic attenuation measurements in vitreous silica at frequencies between 20 and 400 GHz

C. Klieber, E. Peronne, K. Katayama, J. Choi, M. Yamaguchi, T. Pezeril, and Keith A. Nelson

Appl. Phys. Lett. 98, 211908 (2011); http://dx.doi.org/10.1063/1.3595275 (3 pages) | Cited 5 times

Online Publication Date: 26 May 2011

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Acoustic attenuation rates in vitreous silica in the 20–400 GHz frequency range have been measured using a multiple-pulse optical technique for generation of tunable multicycle acoustic waves that are detected interferometrically after traversal of the sample. The results connect the frequency ranges of several measurement methods, yielding a consistent description of the acoustic behavior.
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62.65.+k Acoustical properties of solids
61.43.-j Disordered solids

In situ investigation of hydrogen interacting with Si(100)

Sebastian Brückner, Henning Döscher, Peter Kleinschmidt, and Thomas Hannappel

Appl. Phys. Lett. 98, 211909 (2011); http://dx.doi.org/10.1063/1.3593195 (3 pages) | Cited 5 times

Online Publication Date: 27 May 2011

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Silicon surfaces are subject to intense interaction with hydrogen ambient common in vapor phase epitaxy. We distinguish characteristic configurations of vicinal Si(100) by in situ reflectance anisotropy spectroscopy: covered by protective oxides, cleaned by thermal annealing, and the formation of monohydrides during cooling. Even above 1000 K, most dangling bonds of the (2×1)-reconstructed surface are saturated by hydrogen, while stability of Si–H bonds in the process gas ambient requires temperatures well below 750 K. Adjustment of hydrogen coverage employing alternative process gases provides experimental access to hydrogen adsorption and desorption characteristics valid for annealing in vapor phase epitaxy ambient.
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81.65.Cf Surface cleaning, etching, patterning
61.72.Cc Kinetics of defect formation and annealing
71.55.Cn Elemental semiconductors
68.43.Mn Adsorption kinetics
68.43.Nr Desorption kinetics
78.30.Am Elemental semiconductors and insulators
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Magnetoresistance origin in martensitic and austenitic phases of Ni2Mn1+xSn1−x

Sandeep Singh and C. Biswas

Appl. Phys. Lett. 98, 212101 (2011); http://dx.doi.org/10.1063/1.3592853 (3 pages) | Cited 3 times

Online Publication Date: 23 May 2011

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The magnetoresistance (MR) of Ni2Mn1+xSn1−x (0.40 ≤ x ≤ 0.52) is studied as functions of temperature and magnetic field in austenitic and martensitic phases. The maximum MR obtained is −36% (x = 0.4) at 170 K with 7 T magnetic field during martensitic transition. The MR in the martensitic phase (maximum −2.2%) is less than that in austenitic phase (maximum −4.6%). The origin of less MR below and above martensitic transition is understood through the experimental data fitting with magnetic field dependence (Hn) of MR.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
64.70.kd Metals and alloys

High-performance and room-temperature-processed nanofloating gate memory devices based on top-gate transparent thin-film transistors

Il-Suk Kang, Young-Su Kim, Hyun-Sang Seo, Se Wan Son, Eun Ae Yoon, Seung-Ki Joo, and Chi Won Ahn

Appl. Phys. Lett. 98, 212102 (2011); http://dx.doi.org/10.1063/1.3593096 (3 pages) | Cited 1 time

Online Publication Date: 23 May 2011

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Transparent nanofloating gate memory devices based on top-gate zinc oxide thin-film transistors were developed. The proposed devices contained a facile and dry-synthesized palladium nanocluster array as a charge-trapping layer. The good programmable memory characteristics were exhibited due to the thin tunneling oxide, caused by the top-gate structure. The good endurance, data retention capability, and environmental stability demonstrated by the proposed device made it suitable for nonvolatile memory applications. As the whole processes were carried at room temperature, this letter has a potential use in fabricating high-performance and high-reliability nonvolatile memory devices on flexible substrates.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices

Single-electron shuttle based on a silicon quantum dot

K. W. Chan, M. Möttönen, A. Kemppinen, N. S. Lai, K. Y. Tan, W. H. Lim, and A. S. Dzurak

Appl. Phys. Lett. 98, 212103 (2011); http://dx.doi.org/10.1063/1.3593491 (3 pages) | Cited 1 time

Online Publication Date: 23 May 2011

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We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model, which suggests that the electron gas may be heated substantially by the ac driving voltage.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

Takashi Fujii, Masashi Arita, Yasuo Takahashi, and Ichiro Fujiwara

Appl. Phys. Lett. 98, 212104 (2011); http://dx.doi.org/10.1063/1.3593494 (3 pages) | Cited 10 times

Online Publication Date: 23 May 2011

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An in situ transmission electron microscopy (TEM) analysis of a solid electrolyte, Cu–GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high- to low-resistance states. When the resistance changed to high-resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu.
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73.40.Ns Metal-nonmetal contacts
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.16.-c Methods of micro- and nanofabrication and processing
72.60.+g Mixed conductivity and conductivity transitions

Atomistic study of electronic structure of PbSe nanowires

Abhijeet Paul and Gerhard Klimeck

Appl. Phys. Lett. 98, 212105 (2011); http://dx.doi.org/10.1063/1.3592577 (3 pages)

Online Publication Date: 23 May 2011

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Lead Selenide (PbSe) is an attractive ‘IV-VI’ semiconductor material to design optical sensors, lasers, and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The effect of cross-section size (W) and channel orientation on the band structure of PbSe NWs is studied using an 18 band sp3d5 tight-binding theory. The band gap increases almost with the inverse of the W for all the orientations indicating weak symmetry dependence. [111] and [110] NWs show higher ballistic conductance for the conduction and valence band compared to [100] NWs due to the significant splitting of the projected L-valleys in [100] NWs.
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71.20.Nr Semiconductor compounds
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
72.20.Ht High-field and nonlinear effects
73.63.Nm Quantum wires
73.23.Ad Ballistic transport
73.21.Hb Quantum wires
FREE

Structural transition in LaVO3/SrVO3 superlattices and its influence on transport properties

A. David, R. Frésard, Ph. Boullay, W. Prellier, U. Lüders, and P.-E. Janolin

Appl. Phys. Lett. 98, 212106 (2011); http://dx.doi.org/10.1063/1.3593489 (3 pages)

Online Publication Date: 24 May 2011

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Measurements of the resistive properties and the lattice parameters of a (LaVO3)[6 unit cells]/(SrVO3)[1 unit cell] superlattice between 10 K and room temperature are presented. A low temperature metallic phase compatible with a Fermi liquid behavior is evidenced. It disappears in the vicinity of a structural transition from a monoclinic to tetragonal phase, in which disorder seems to strongly influence the transport. Our results will enrich the understanding of the electronic properties of complex heterostructures.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.K- Solid-solid transitions
73.21.Cd Superlattices
73.63.-b Electronic transport in nanoscale materials and structures
61.66.Fn Inorganic compounds
71.10.Ay Fermi-liquid theory and other phenomenological models

Neutron doping effects in epitaxially laterally overgrown n-GaN

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, E. B. Yakimov, N. G. Kolin, V. M. Boiko, A. V. Korulin, and S. J. Pearton

Appl. Phys. Lett. 98, 212107 (2011); http://dx.doi.org/10.1063/1.3593957 (3 pages)

Online Publication Date: 24 May 2011

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Thermal neutron irradiation and annealing effects were studied for undoped n-GaN prepared by epitaxial lateral overgrowth (ELOG). Electron beam induced current (EBIC) imaging and profiling prior to irradiation showed that the residual donor doping in our ELOG samples was about three times higher in the high-dislocation-density ELOG wing than in the low-dislocation-density ELOG window regions. Irradiation with thermal neutrons and subsequent annealing led to greatly improved doping uniformity, as evidenced by EBIC imaging. The neutron transmutation doping avoids the anisotropy of donor incorporation efficiency for different planes during ELOG and provides a uniform doping environment. Capacitance-voltage profiling on such samples showed the presence of electrically active centers with concentration close to the concentration of Ge donors produced by Ga interaction with thermal neutrons.
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61.80.Hg Neutron radiation effects
81.05.Ea III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Cc Kinetics of defect formation and annealing
61.82.Fk Semiconductors
61.72.uj III-V and II-VI semiconductors

Transport properties of free carriers in semiconductors studied by terahertz time-domain magneto-optical ellipsometry

Kenichi Yatsugi, Naoki Matsumoto, Takeshi Nagashima, and Masanori Hangyo

Appl. Phys. Lett. 98, 212108 (2011); http://dx.doi.org/10.1063/1.3595270 (3 pages) | Cited 3 times

Online Publication Date: 25 May 2011

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We have developed a terahertz time-domain magneto-optical ellipsometry to deduce the effective mass, scattering time, density, and type (n or p) of free carriers independently. The parameters are derived from diagonal and off-diagonal components of the complex dielectric tensor obtained by measurements of magneto-optical Kerr effects under a magnetic field of 0.46 T using the generalized Drude model. The derivation of these parameters for n-type InAs wafers with different carrier densities is demonstrated. The carrier density dependence of the effective mass agrees well with previously reported experimental results and theoretical calculations that take into account nonparabolicity of conduction bands.
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72.20.-i Conductivity phenomena in semiconductors and insulators
78.20.Ls Magneto-optical effects
78.70.Gq Microwave and radio-frequency interactions
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Current annealing and electrical breakdown of epitaxial graphene

S. Hertel, F. Kisslinger, J. Jobst, D. Waldmann, M. Krieger, and H. B. Weber

Appl. Phys. Lett. 98, 212109 (2011); http://dx.doi.org/10.1063/1.3592841 (3 pages) | Cited 2 times

Online Publication Date: 26 May 2011

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We report on epitaxial graphene on silicon carbide at high current densities. We observe two distinguished regimes, and a final breakdown. First for low current densities the conductance is enhanced due to desorption of adsorbates. Second with increasing bias the sample locally starts to glow and is strongly heated. The silicon carbide material decomposes, graphitic material is formed and thus additional current paths are created. The graphene layer breaks down, which is, however, not visible in high bias data. The final breakdown is a self-amplifying process resulting in a locally destroyed sample but surprisingly with better conductance than the original sample.
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73.61.Wp Fullerenes and related materials
68.43.Nr Desorption kinetics
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.40.Gh Other heat and thermomechanical treatments
77.22.Jp Dielectric breakdown and space-charge effects

The nature of electron lone pairs in BiVO4

D. J. Payne, M. D. M. Robinson, R. G. Egdell, A. Walsh, J. McNulty, K. E. Smith, and L. F. J. Piper

Appl. Phys. Lett. 98, 212110 (2011); http://dx.doi.org/10.1063/1.3593012 (3 pages) | Cited 8 times

Online Publication Date: 26 May 2011

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The electronic structure of BiVO4 has been studied by x-ray photoelectron, x-ray absorption, and x-ray emission spectroscopies, in comparison with density functional theory calculations. Our results confirm both the direct band gap of 2.48 eV and that the Bi 6s electrons hybridize with O 2p to form antibonding “lone pair” states at the top of the valence band. The results highlight the suitability of combining s2 and d0 cations to produce photoactive ternary oxides.
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71.20.Ps Other inorganic compounds
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
78.70.En X-ray emission spectra and fluorescence
78.70.Dm X-ray absorption spectra
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering

A. Betti, G. Fiori, and G. Iannaccone

Appl. Phys. Lett. 98, 212111 (2011); http://dx.doi.org/10.1063/1.3587627 (3 pages) | Cited 6 times

Online Publication Date: 27 May 2011

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We investigate the low-field phonon-limited mobility in armchair graphene nanoribbons (GNRs) using full-band electron and phonon dispersion relations. We show that lateral confinement suppresses the intrinsic mobility of GNRs to values typical of common bulk semiconductors, and very far from the impressive experiments on two-dimensional graphene. 1 nm-wide suspended GNRs exhibit a mobility close to 500 cm2/V s at room temperature, whereas 1 nm-wide GNRs deposited on HfO2 exhibit a mobility of 60 cm2/V s due to surface phonons. We also show the occurrence of polaron formation, leading to band gap renormalization of ≈118 meV for 1-nm-wide armchair GNRs.
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63.22.Rc Phonons in graphene
72.20.Fr Low-field transport and mobility; piezoresistance
71.38.-k Polarons and electron-phonon interactions

Modeling the electrical resistance of gold film conductors on uniaxially stretched elastomeric substrates

Wenzhe Cao, Patrick Görrn, and Sigurd Wagner

Appl. Phys. Lett. 98, 212112 (2011); http://dx.doi.org/10.1063/1.3594240 (3 pages) | Cited 1 time

Online Publication Date: 27 May 2011

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The electrical resistance of gold film conductors on polydimethyl siloxane substrates at stages of uniaxial stretching is measured and modeled. The surface area of a gold conductor is assumed constant during stretching so that the exposed substrate takes up all strain. Sheet resistances are calculated from frames of scanning electron micrographs by numerically solving for the electrical potentials of all pixels in a frame. These sheet resistances agree sufficiently well with values measured on the same conductors to give credence to the model of a stretchable network of gold links defined by microcracks.
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73.61.At Metal and metallic alloys
68.55.J- Morphology of films
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.mt Cracks
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Significant ferrimagnetism observed in Aurivillius Bi4Ti3O12 doped by antiferromagnetic LaFeO3

Fei-Xiang Wu, Zhong Chen, Y. B. Chen, Shan-Tao Zhang, Jian Zhou, Yong-Yuan Zhu, and Yan-Feng Chen

Appl. Phys. Lett. 98, 212501 (2011); http://dx.doi.org/10.1063/1.3592737 (3 pages) | Cited 4 times

Online Publication Date: 23 May 2011

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Highly crystalline quality c-axis epitaxial nLaFeO3–Bi4Ti3O12 (n = 0.5,1.0,1.5) thin films were deposited on SrTiO3 (001) substrates by pulsed laser deposition. The x-ray diffraction and transmission electron microscopy characterizations confirm that there are designed even-odd number perovskite-block structures in n = 0.5 and 1.5 films while it has even-even number ones in n = 1.0 films. The remarkable physical property of n = 0.5 and 1.5 samples is the presence of ferrimagnetism even up to room temperature. While it is antiferromagentic property in n = 1.0 sample. The observed ferrimagentism is explained qualitatively by considering the crystal structure in nLaFeO3–Bi4Ti3O12.
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75.70.Ak Magnetic properties of monolayers and thin films
68.55.aj Insulators
81.15.Fg Pulsed laser ablation deposition
75.50.Ee Antiferromagnetics
75.50.Gg Ferrimagnetics
61.72.up Other materials

Planar millimeter wave band-stop filters based on the excitation of confined magnetostatic waves in barium hexagonal ferrite thin film strips

Lei Lu, Young-Yeal Song, Joshua Bevivino, and Mingzhong Wu

Appl. Phys. Lett. 98, 212502 (2011); http://dx.doi.org/10.1063/1.3592817 (3 pages) | Cited 1 time

Online Publication Date: 23 May 2011

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A planar millimeter wave band-stop filter based on confined magnetostatic wave (MSW) excitations in an M-type barium hexagonal ferrite (BaM) film strip was demonstrated. The device consists of a BaM film strip on the top of a coplanar waveguide with the strip length along the signal line. For zero magnetic fields, the device shows a band-stop filtering response at 53 GHz. This response originates from the excitation of confined MSW modes across the BaM strip width. The filter operation frequency is tunable with low fields. This tuning relies on the change in the MSW dispersion with field.
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84.30.Vn Filters
84.40.Az Waveguides, transmission lines, striplines
84.40.Dc Microwave circuits

Giant anisotropic magnetoresistance in bilayered La1.2Sr1.8Mn2O7 single crystals

Wei Ning, Zhe Qu, You-Ming Zou, Lang-Sheng Ling, Lei Zhang, Chuan-Ying Xi, Hai-Feng Du, Run-Wei Li, and Yu-Heng Zhang

Appl. Phys. Lett. 98, 212503 (2011); http://dx.doi.org/10.1063/1.3593486 (3 pages) | Cited 3 times

Online Publication Date: 23 May 2011

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We report an observation of anomalous anisotropic magnetoresistance (AMR) in bilayered La1.2Sr1.8Mn2O7 single crystals. A giant AMR is found to be 80% under a magnetic field of 1 T near the metal-insulator transition temperature, where AMR is defined as AMR = [ρ(H⊥c)−ρ(H∥c)]/ρ(H⊥c)×100%, and ρ(H⊥c) and ρ(H∥c) are the resistivity with the magnetic field perpendicular and parallel to c-axis, respectively. The AMR effect shows strong temperature and magnetic field dependences, and indicates a close interrelation with the anisotropic field-tuned metal-insulator transition.
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75.47.De Giant magnetoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
71.30.+h Metal-insulator transitions and other electronic transitions

Magnetism and magnetoelectricity of a U-type hexaferrite Sr4Co2Fe36O60

K. Okumura, T. Ishikura, M. Soda, T. Asaka, H. Nakamura, Y. Wakabayashi, and T. Kimura

Appl. Phys. Lett. 98, 212504 (2011); http://dx.doi.org/10.1063/1.3593371 (3 pages) | Cited 7 times

Online Publication Date: 23 May 2011

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We report on structural, magnetic, and magnetoelectric (ME) properties of a U-type hexaferrite Sr4Co2Fe36O60 prepared by solid state reaction. Samples sintered at 1150–1180 °C in oxygen contain the fewest impurity phases and show highly insulating behavior. Powder neutron diffraction results reveal that a commensurate magnetic order with a (0,0,3/2) propagation vector develops below TN2 ∼ 350 K. Corresponding to the appearance of the magnetic order, the sample shows a small ME effect. These results suggest that Sr4Co2Fe36O60 is a room-temperature ME material in which the origin of the ME effect is similar to those of other ME hexaferrites.
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75.85.+t Magnetoelectric effects, multiferroics
61.66.Fn Inorganic compounds
75.50.Gg Ferrimagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Coercivity change in an FePt thin layer in a Hall device by voltage application

Takeshi Seki, Makoto Kohda, Junsaku Nitta, and Koki Takanashi

Appl. Phys. Lett. 98, 212505 (2011); http://dx.doi.org/10.1063/1.3595318 (3 pages) | Cited 10 times

Online Publication Date: 24 May 2011

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Show Abstract
The coercivity (Hc) of a perpendicularly magnetized FePt layer was modulated by applying the voltage (Vapp) to a Hall device through MgO and Al–O insulating layers. A change in ∼ 40 Oe in Hc was observed by changing Vapp from −13 to 13 V. From the quantitative analysis of the voltage effect on Hc, the change in the anisotropy energy by voltage application was evaluated to be 18.6 fJ/V m, which was of the same order as the theoretical prediction. The role of the MgO layer for the voltage effect was also discussed.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
85.75.Nn Hybrid Hall devices
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
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