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23 May 2011

Volume 98, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 98, 212504 (2011); http://dx.doi.org/10.1063/1.3593371 (3 pages)

K. Okumura, T. Ishikura, M. Soda, T. Asaka, H. Nakamura, Y. Wakabayashi, and T. Kimura
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Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory

M. Yang, P. Hu, J. Q. Lu, Q. B. Lv, and S. W. Li

Appl. Phys. Lett. 98, 213501 (2011); http://dx.doi.org/10.1063/1.3591975 (3 pages) | Cited 1 time

Online Publication Date: 24 May 2011

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Passive crossbar arrays of oxide-based memory elements hold the promise of high density and speed nonvolatile memory. However, realization of the expected paradigm has been hindered by a so-called misreading problem resulting from sneak paths in passive crossbar arrays. We introduce a resistive memory element consisting of two coupled interfaces in a metal/doped oxide/metal structure. The element avoids the misreading problem by the nonlinearity in current-voltage loops and significantly reduces the write current. The distinct device characteristics may also be applicable in programmable analog circuits and neuromorphic circuits.
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84.30.Sk Pulse and digital circuits

Energy gap tuning in uniaxial strained zigzag graphene nanoribbons

Fei Liu, Xiaoyan Liu, and Jinfeng Kang

Appl. Phys. Lett. 98, 213502 (2011); http://dx.doi.org/10.1063/1.3593490 (3 pages) | Cited 1 time

Online Publication Date: 24 May 2011

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The band structures of zigzag graphene nanoribbons under uniaxial strain are investigated within the mean-field Hubbard model. In addition to the intrinsic gap modification, the strain can induce two additional gaps in the conduction and valence bands when the compressive strain along the armchair direction or the tensile strain along the zigzag direction is greater than 13%. These band gap variations can be attributed to uniaxial strain which causes the breaking of the lattice symmetry and two different hopping energies. The ratio of the two different hopping energies impacts on the intrinsic and the strain induced gaps.
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73.22.Pr Electronic structure of graphene
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.63.Bd Nanocrystalline materials
73.20.At Surface states, band structure, electron density of states
72.20.Ee Mobility edges; hopping transport
71.10.Fd Lattice fermion models (Hubbard model, etc.)

Paramagnetic Pb-type interface defects in thermal (110)Si/SiO2

K. Keunen, A. Stesmans, and V. V. Afanas’ev

Appl. Phys. Lett. 98, 213503 (2011); http://dx.doi.org/10.1063/1.3590271 (3 pages)

Online Publication Date: 25 May 2011

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A multifrequency electron spin resonance (ESR) study on thermal (110)Si/SiO2 as a function of oxidation temperature Tox (200–1125 °C) reveals an unexpectedly high density of Pb-type interface centers, which variant, based on pertinent ESR properties, is typified as Pb0(110). In terms of Pb(0) center density, the (110) face is found to be the worst of all three low index Si interfaces, i.e., [Pb0(100)]<[Pb(111)]<[Pb0(110)], over the range Tox< ∼ 900 °C. Unlike previous belief, the density of prevailing Pb(0) centers over the low index Si/SiO2 interfaces is not found to scale with Si surface areal atom density nor available Si bond density; an alternative criterion is suggested.
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68.35.Ct Interface structure and roughness
76.30.-v Electron paramagnetic resonance and relaxation
81.65.Mq Oxidation

Hybrid organic/inorganic ambipolar thin film transistor chemical sensor

Soumya Dutta, Shannon D. Lewis, and Ananth Dodabalapur

Appl. Phys. Lett. 98, 213504 (2011); http://dx.doi.org/10.1063/1.3583594 (3 pages) | Cited 1 time

Online Publication Date: 25 May 2011

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An ambipolar hybrid organic-inorganic thin film transistor, consisting of pentacene and zinc oxide as semiconductors, is reported. The current-voltage characteristics in different operational modes are studied. The transistor is employed as a chemical vapor sensor, operating at room temperature. In p-channel accumulation mode, which is dominated by hole transport, a decrease of current with the introduction of analyte is observed, while in the n-channel triode mode, in which the current is predominantly contributed by electron transport, an increase in current with analyte delivery is observed. A qualitative model based on dipole interaction is proposed to explain the sensing activity.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
82.80.-d Chemical analysis and related physical methods of analysis

Role of stable and metastable Mg–H complexes in p-type GaN for cw blue laser diodes

A. Castiglia, J.-F. Carlin, and N. Grandjean

Appl. Phys. Lett. 98, 213505 (2011); http://dx.doi.org/10.1063/1.3593964 (3 pages) | Cited 2 times

Online Publication Date: 26 May 2011

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Secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements were combined to thoroughly study Mg doping in GaN layers grown by metal organic vapor phase epitaxy. First we found that the Mg steady-state incorporation regime occurs for a surface coverage of 0.3 monolayer. Additionally SIMS indicates that H incorporates proportionally with Mg until a certain [Mg] where [H] saturates. After thermal activation, [H] while being much lower still scales with [Mg]. These results suggest that H combines with Mg to form two different types of Mg–H complexes: a metastable one leading to the Mg acceptor after annealing, the other one (dominating at high [Mg]) being stable and electrically inactive. The obtained results allowed us optimizing doping conditions for blue laser diodes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
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