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23 May 2011

Volume 98, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 98, 212504 (2011); http://dx.doi.org/10.1063/1.3593371 (3 pages)

K. Okumura, T. Ishikura, M. Soda, T. Asaka, H. Nakamura, Y. Wakabayashi, and T. Kimura
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Mapping piezoelectric nonlinearity in the Rayleigh regime using band excitation piezoresponse force microscopy

F. Griggio, S. Jesse, A. Kumar, D. M. Marincel, D. S. Tinberg, S. V. Kalinin, and S. Trolier-McKinstry

Appl. Phys. Lett. 98, 212901 (2011); http://dx.doi.org/10.1063/1.3593138 (3 pages) | Cited 5 times

Online Publication Date: 23 May 2011

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Band excitation piezoresponse force microscopy enables local investigation of the nonlinear piezoelectric behavior of ferroelectric thin films. However, the presence of additional nonlinearity associated with the dynamic resonant response of the tip-surface junction can complicate the study of a material’s nonlinearity. Here, the relative importance of the two nonlinearity sources was examined as a function of the excitation function. It was found that in order to minimize the effects of nonlinear tip-surface interactions but achieve good signal to noise level, an optimal excitation function must be used.
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77.80.Dj Domain structure; hysteresis
77.55.hn Other piezoelectric or electrostrictive films
77.84.Cg PZT ceramics and other titanates
77.84.Ek Niobates and tantalates
77.55.hj PZT
77.65.Fs Electromechanical resonance; quartz resonators

Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

V. Mikhelashvili, B. Meyler, S. Yofis, Y. Shneider, A. Zeidler, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, M. Lisiansky, Y. Roizin, J. Salzman, and G. Eisenstein

Appl. Phys. Lett. 98, 212902 (2011); http://dx.doi.org/10.1063/1.3595484 (3 pages) | Cited 8 times

Online Publication Date: 26 May 2011

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We demonstrate a low voltage nonvolatile memory field effect transistor comprising thermal SiO2 tunneling and HfO2 blocking layers as the gate dielectric stack and Au nanocrystals as charge storage nodes. The structure exhibits a memory window of ∼ 2 V at an applied sweeping voltage of ±3 V which increases to 12.6 at ±12 V. Retention tests show an extrapolated loss of 16% after ten years in the hysteresis width of the threshold voltage. Dynamic program/erase operation reveal an approximately pulse width independent memory for pulse durations of 1 μs to 10 ms; longer pulses increase the memory window while for pulses shorter than 1 μs, the memory windows vanishes. The effective oxide thickness is below 10 nm with very low gate and drain leakage currents.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits

Submonolayer barium passivation study for germanium(100)/molecular beam epitaxial Al2O3

X. Sun, C. Merckling, M. Heyns, J. Dekoster, and M. Caymax

Appl. Phys. Lett. 98, 212903 (2011); http://dx.doi.org/10.1063/1.3595685 (3 pages) | Cited 4 times

Online Publication Date: 26 May 2011

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The passivation effect of a Ba submonolayer with (2×1) and (4×1) surface reconstructions are investigated for Ge(001)/Al2O3 interfaces. The interface characteristics are evaluated by capacitance-voltage and ac conductance techniques at various temperatures. It is found that the Ba passivating effect on Ge is dose dependent below one monolayer. At the same time, Ge oxides are suppressed by the presence of a Ba submonolayer. The interface is thermally stable, even at a temperature higher than the desorption temperature of Ge oxides. Forming gas annealing at this temperature yields a relatively symmetric distribution of interface traps in the Ge band gap.
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81.65.Rv Passivation
68.35.bd Metals and alloys
68.43.Nr Desorption kinetics
61.72.Cc Kinetics of defect formation and annealing
73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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