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23 May 2011

Volume 98, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 212504 (2011); http://dx.doi.org/10.1063/1.3593371 (3 pages)

K. Okumura, T. Ishikura, M. Soda, T. Asaka, H. Nakamura, Y. Wakabayashi, and T. Kimura
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Magnetoresistance origin in martensitic and austenitic phases of Ni2Mn1+xSn1−x

Sandeep Singh and C. Biswas

Appl. Phys. Lett. 98, 212101 (2011); http://dx.doi.org/10.1063/1.3592853 (3 pages) | Cited 2 times

Online Publication Date: 23 May 2011

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The magnetoresistance (MR) of Ni2Mn1+xSn1−x (0.40 ≤ x ≤ 0.52) is studied as functions of temperature and magnetic field in austenitic and martensitic phases. The maximum MR obtained is −36% (x = 0.4) at 170 K with 7 T magnetic field during martensitic transition. The MR in the martensitic phase (maximum −2.2%) is less than that in austenitic phase (maximum −4.6%). The origin of less MR below and above martensitic transition is understood through the experimental data fitting with magnetic field dependence (Hn) of MR.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
64.70.kd Metals and alloys

High-performance and room-temperature-processed nanofloating gate memory devices based on top-gate transparent thin-film transistors

Il-Suk Kang, Young-Su Kim, Hyun-Sang Seo, Se Wan Son, Eun Ae Yoon, Seung-Ki Joo, and Chi Won Ahn

Appl. Phys. Lett. 98, 212102 (2011); http://dx.doi.org/10.1063/1.3593096 (3 pages) | Cited 1 time

Online Publication Date: 23 May 2011

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Transparent nanofloating gate memory devices based on top-gate zinc oxide thin-film transistors were developed. The proposed devices contained a facile and dry-synthesized palladium nanocluster array as a charge-trapping layer. The good programmable memory characteristics were exhibited due to the thin tunneling oxide, caused by the top-gate structure. The good endurance, data retention capability, and environmental stability demonstrated by the proposed device made it suitable for nonvolatile memory applications. As the whole processes were carried at room temperature, this letter has a potential use in fabricating high-performance and high-reliability nonvolatile memory devices on flexible substrates.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices

Single-electron shuttle based on a silicon quantum dot

K. W. Chan, M. Möttönen, A. Kemppinen, N. S. Lai, K. Y. Tan, W. H. Lim, and A. S. Dzurak

Appl. Phys. Lett. 98, 212103 (2011); http://dx.doi.org/10.1063/1.3593491 (3 pages) | Cited 1 time

Online Publication Date: 23 May 2011

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We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model, which suggests that the electron gas may be heated substantially by the ac driving voltage.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

Takashi Fujii, Masashi Arita, Yasuo Takahashi, and Ichiro Fujiwara

Appl. Phys. Lett. 98, 212104 (2011); http://dx.doi.org/10.1063/1.3593494 (3 pages) | Cited 10 times

Online Publication Date: 23 May 2011

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An in situ transmission electron microscopy (TEM) analysis of a solid electrolyte, Cu–GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high- to low-resistance states. When the resistance changed to high-resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu.
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73.40.Ns Metal-nonmetal contacts
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.16.-c Methods of micro- and nanofabrication and processing
72.60.+g Mixed conductivity and conductivity transitions

Atomistic study of electronic structure of PbSe nanowires

Abhijeet Paul and Gerhard Klimeck

Appl. Phys. Lett. 98, 212105 (2011); http://dx.doi.org/10.1063/1.3592577 (3 pages)

Online Publication Date: 23 May 2011

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Lead Selenide (PbSe) is an attractive ‘IV-VI’ semiconductor material to design optical sensors, lasers, and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The effect of cross-section size (W) and channel orientation on the band structure of PbSe NWs is studied using an 18 band sp3d5 tight-binding theory. The band gap increases almost with the inverse of the W for all the orientations indicating weak symmetry dependence. [111] and [110] NWs show higher ballistic conductance for the conduction and valence band compared to [100] NWs due to the significant splitting of the projected L-valleys in [100] NWs.
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71.20.Nr Semiconductor compounds
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
72.20.Ht High-field and nonlinear effects
73.63.Nm Quantum wires
73.23.Ad Ballistic transport
73.21.Hb Quantum wires
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Structural transition in LaVO3/SrVO3 superlattices and its influence on transport properties

A. David, R. Frésard, Ph. Boullay, W. Prellier, U. Lüders, and P.-E. Janolin

Appl. Phys. Lett. 98, 212106 (2011); http://dx.doi.org/10.1063/1.3593489 (3 pages)

Online Publication Date: 24 May 2011

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Measurements of the resistive properties and the lattice parameters of a (LaVO3)[6 unit cells]/(SrVO3)[1 unit cell] superlattice between 10 K and room temperature are presented. A low temperature metallic phase compatible with a Fermi liquid behavior is evidenced. It disappears in the vicinity of a structural transition from a monoclinic to tetragonal phase, in which disorder seems to strongly influence the transport. Our results will enrich the understanding of the electronic properties of complex heterostructures.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.K- Solid-solid transitions
73.21.Cd Superlattices
73.63.-b Electronic transport in nanoscale materials and structures
61.66.Fn Inorganic compounds
71.10.Ay Fermi-liquid theory and other phenomenological models

Neutron doping effects in epitaxially laterally overgrown n-GaN

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, E. B. Yakimov, N. G. Kolin, V. M. Boiko, A. V. Korulin, and S. J. Pearton

Appl. Phys. Lett. 98, 212107 (2011); http://dx.doi.org/10.1063/1.3593957 (3 pages)

Online Publication Date: 24 May 2011

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Thermal neutron irradiation and annealing effects were studied for undoped n-GaN prepared by epitaxial lateral overgrowth (ELOG). Electron beam induced current (EBIC) imaging and profiling prior to irradiation showed that the residual donor doping in our ELOG samples was about three times higher in the high-dislocation-density ELOG wing than in the low-dislocation-density ELOG window regions. Irradiation with thermal neutrons and subsequent annealing led to greatly improved doping uniformity, as evidenced by EBIC imaging. The neutron transmutation doping avoids the anisotropy of donor incorporation efficiency for different planes during ELOG and provides a uniform doping environment. Capacitance-voltage profiling on such samples showed the presence of electrically active centers with concentration close to the concentration of Ge donors produced by Ga interaction with thermal neutrons.
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61.80.Hg Neutron radiation effects
81.05.Ea III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Cc Kinetics of defect formation and annealing
61.82.Fk Semiconductors
61.72.uj III-V and II-VI semiconductors

Transport properties of free carriers in semiconductors studied by terahertz time-domain magneto-optical ellipsometry

Kenichi Yatsugi, Naoki Matsumoto, Takeshi Nagashima, and Masanori Hangyo

Appl. Phys. Lett. 98, 212108 (2011); http://dx.doi.org/10.1063/1.3595270 (3 pages) | Cited 2 times

Online Publication Date: 25 May 2011

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We have developed a terahertz time-domain magneto-optical ellipsometry to deduce the effective mass, scattering time, density, and type (n or p) of free carriers independently. The parameters are derived from diagonal and off-diagonal components of the complex dielectric tensor obtained by measurements of magneto-optical Kerr effects under a magnetic field of 0.46 T using the generalized Drude model. The derivation of these parameters for n-type InAs wafers with different carrier densities is demonstrated. The carrier density dependence of the effective mass agrees well with previously reported experimental results and theoretical calculations that take into account nonparabolicity of conduction bands.
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72.20.-i Conductivity phenomena in semiconductors and insulators
78.20.Ls Magneto-optical effects
78.70.Gq Microwave and radio-frequency interactions
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Current annealing and electrical breakdown of epitaxial graphene

S. Hertel, F. Kisslinger, J. Jobst, D. Waldmann, M. Krieger, and H. B. Weber

Appl. Phys. Lett. 98, 212109 (2011); http://dx.doi.org/10.1063/1.3592841 (3 pages) | Cited 1 time

Online Publication Date: 26 May 2011

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We report on epitaxial graphene on silicon carbide at high current densities. We observe two distinguished regimes, and a final breakdown. First for low current densities the conductance is enhanced due to desorption of adsorbates. Second with increasing bias the sample locally starts to glow and is strongly heated. The silicon carbide material decomposes, graphitic material is formed and thus additional current paths are created. The graphene layer breaks down, which is, however, not visible in high bias data. The final breakdown is a self-amplifying process resulting in a locally destroyed sample but surprisingly with better conductance than the original sample.
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73.61.Wp Fullerenes and related materials
68.43.Nr Desorption kinetics
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.40.Gh Other heat and thermomechanical treatments
77.22.Jp Dielectric breakdown and space-charge effects

The nature of electron lone pairs in BiVO4

D. J. Payne, M. D. M. Robinson, R. G. Egdell, A. Walsh, J. McNulty, K. E. Smith, and L. F. J. Piper

Appl. Phys. Lett. 98, 212110 (2011); http://dx.doi.org/10.1063/1.3593012 (3 pages) | Cited 7 times

Online Publication Date: 26 May 2011

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The electronic structure of BiVO4 has been studied by x-ray photoelectron, x-ray absorption, and x-ray emission spectroscopies, in comparison with density functional theory calculations. Our results confirm both the direct band gap of 2.48 eV and that the Bi 6s electrons hybridize with O 2p to form antibonding “lone pair” states at the top of the valence band. The results highlight the suitability of combining s2 and d0 cations to produce photoactive ternary oxides.
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71.20.Ps Other inorganic compounds
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
78.70.En X-ray emission spectra and fluorescence
78.70.Dm X-ray absorption spectra
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering

A. Betti, G. Fiori, and G. Iannaccone

Appl. Phys. Lett. 98, 212111 (2011); http://dx.doi.org/10.1063/1.3587627 (3 pages) | Cited 6 times

Online Publication Date: 27 May 2011

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We investigate the low-field phonon-limited mobility in armchair graphene nanoribbons (GNRs) using full-band electron and phonon dispersion relations. We show that lateral confinement suppresses the intrinsic mobility of GNRs to values typical of common bulk semiconductors, and very far from the impressive experiments on two-dimensional graphene. 1 nm-wide suspended GNRs exhibit a mobility close to 500 cm2/V s at room temperature, whereas 1 nm-wide GNRs deposited on HfO2 exhibit a mobility of 60 cm2/V s due to surface phonons. We also show the occurrence of polaron formation, leading to band gap renormalization of ≈118 meV for 1-nm-wide armchair GNRs.
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63.22.Rc Phonons in graphene
72.20.Fr Low-field transport and mobility; piezoresistance
71.38.-k Polarons and electron-phonon interactions

Modeling the electrical resistance of gold film conductors on uniaxially stretched elastomeric substrates

Wenzhe Cao, Patrick Görrn, and Sigurd Wagner

Appl. Phys. Lett. 98, 212112 (2011); http://dx.doi.org/10.1063/1.3594240 (3 pages) | Cited 1 time

Online Publication Date: 27 May 2011

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The electrical resistance of gold film conductors on polydimethyl siloxane substrates at stages of uniaxial stretching is measured and modeled. The surface area of a gold conductor is assumed constant during stretching so that the exposed substrate takes up all strain. Sheet resistances are calculated from frames of scanning electron micrographs by numerically solving for the electrical potentials of all pixels in a frame. These sheet resistances agree sufficiently well with values measured on the same conductors to give credence to the model of a stretchable network of gold links defined by microcracks.
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73.61.At Metal and metallic alloys
68.55.J- Morphology of films
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.mt Cracks
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