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23 May 2011

Volume 98, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 98, 212504 (2011); http://dx.doi.org/10.1063/1.3593371 (3 pages)

K. Okumura, T. Ishikura, M. Soda, T. Asaka, H. Nakamura, Y. Wakabayashi, and T. Kimura
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Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon

Szu-Lin Cheng, Gary Shambat, Jesse Lu, Hyun-Yong Yu, Krishna Saraswat, Theodore I. Kamins, Jelena Vuckovic, and Yoshio Nishi

Appl. Phys. Lett. 98, 211101 (2011); http://dx.doi.org/10.1063/1.3592837 (3 pages) | Cited 4 times

Online Publication Date: 23 May 2011

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We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a few hundred. Direct band gap electroluminescence under continuous current injection shows a clear enhancement of emission by the cavity. At this stage, the pumping level is not high enough to cause linewidth narrowing and invert the material. A higher n-type activated doping of germanium is necessary to achieve lasing.
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42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.60.Fi Electroluminescence

Remotely induced atmospheric lasing

Phillip Sprangle, Joseph Peñano, Bahman Hafizi, Daniel Gordon, and Marlan Scully

Appl. Phys. Lett. 98, 211102 (2011); http://dx.doi.org/10.1063/1.3584034 (3 pages) | Cited 5 times

Online Publication Date: 23 May 2011

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We propose and analyze a remote atmospheric lasing configuration which utilizes a combination of an ultrashort pulse laser to form a plasma filament (seed electrons) by tunneling ionization and a heater pulse which thermalizes the seed electrons. Electrons collisionally excite nitrogen molecules and induce lasing in the ultraviolet. The lasing gain is sufficiently high to reach saturation within the length of the plasma filament. A remotely generated ultraviolet source may have applications for standoff detection of biological and chemical agents.
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42.68.-w Atmospheric and ocean optics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.72.Bj Visible and ultraviolet sources

Subnanosecond electro-optic modulation of triggered single photons from a quantum dot

Matthew T. Rakher and Kartik Srinivasan

Appl. Phys. Lett. 98, 211103 (2011); http://dx.doi.org/10.1063/1.3593007 (3 pages) | Cited 4 times

Online Publication Date: 23 May 2011

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Control of single photon wave-packets is an important resource for developing hybrid quantum systems which are composed of different physical systems interacting via photons. Here, we extend this control to triggered photons emitted by a quantum dot, temporally shaping single photon wave-packets on timescales fast compared to their radiative decay by electro-optic modulation. In particular, telecommunications-band single photons resulting from the recombination of an exciton in a quantum dot with exponentially decaying wave-packets are synchronously modulated to create Gaussian-shaped single photon wave-packets. We explore other pulse shapes and investigate the feasibility of this technique for increasing the indistinguishability of quantum dot generated single photons.
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78.20.Jq Electro-optical effects
78.67.Hc Quantum dots
73.22.Lp Collective excitations
71.35.-y Excitons and related phenomena

Unidirectional channel-drop filter by one-way gyromagnetic photonic crystal waveguides

Jin-Xin Fu, Jin Lian, Rong-Juan Liu, Lin Gan, and Zhi-Yuan Li

Appl. Phys. Lett. 98, 211104 (2011); http://dx.doi.org/10.1063/1.3593027 (3 pages) | Cited 6 times

Online Publication Date: 23 May 2011

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We theoretically and experimentally study the side coupling between guided modes and cavity modes in a one-way waveguide that is composed of a regular photonic crystal and a gyromagnetic photonic crystal. At the cavity resonant wavelength, the backward mode can be completely blocked while the forward mode is only slightly influenced in the transmissivity for a specially designed waveguide. This unique light transport property can be exploited to construct a unidirectional band stop filter and a unidirectional channel-drop filter that can selectively process a light signal propagating only along a particular direction.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

Laser emission with excitonic gain in a ZnO planar microcavity

T. Guillet, C. Brimont, P. Valvin, B. Gil, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule

Appl. Phys. Lett. 98, 211105 (2011); http://dx.doi.org/10.1063/1.3593032 (3 pages) | Cited 7 times

Online Publication Date: 23 May 2011

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The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T = 80 to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240 K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.By Design of specific laser systems

Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

P. Rauter, G. Mussler, D. Grützmacher, and T. Fromherz

Appl. Phys. Lett. 98, 211106 (2011); http://dx.doi.org/10.1063/1.3593134 (3 pages) | Cited 4 times

Online Publication Date: 23 May 2011

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We report the fabrication and thorough characterization of tensile strained p-type SiGe quantum well infrared photodetectors (QWIPs) grown on a Si0.74Ge0.26 pseudosubstrate. The QWIPs operate from a light-hole (LH) ground state and feature responsivity peaks in both the terahertz and mid-infrared regimes with responsivity values up to 3.7 mA/W, originating from LH–LH, LH–heavy-hole, and LH–split-off-band transitions.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.Fg Quantum wells
73.63.Hs Quantum wells

Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

Po-Min Tu, Chun-Yen Chang, Shih-Cheng Huang, Ching-Hsueh Chiu, Jet-Rung Chang, Wei-Ting Chang, Dong-Sing Wuu, Hsiao-Wen Zan, Chien-Chung Lin, Hao-Chung Kuo, and Chih-Peng Hsu

Appl. Phys. Lett. 98, 211107 (2011); http://dx.doi.org/10.1063/1.3591967 (3 pages) | Cited 8 times

Online Publication Date: 23 May 2011

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The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers.
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85.60.Jb Light-emitting devices

Flexible wavefront manipulation of surface plasmon polaritons without mechanical motion components

Chenglong Zhao and Jiasen Zhang

Appl. Phys. Lett. 98, 211108 (2011); http://dx.doi.org/10.1063/1.3593005 (3 pages)

Online Publication Date: 24 May 2011

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We propose a form of flexible wavefront manipulation of surface plasmon polaritons (SPPs) without any mechanical motion component. An incoming light pattern, the amplitude of which is modulated by a liquid crystal spatial light modulator, is used to illuminate a grating on an Au film acting as a light-SPP coupler. The SPPs launched from the grating have the same intensity distribution as the input light pattern. By changing the input image, continuously variable in-plane SPP focusing on the Au film is implemented. The experimental results agree well with numerical simulations.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.79.Hp Optical processors, correlators, and modulators
42.70.Df Liquid crystals

Modulation response of quantum dot nanolight-emitting-diodes exploiting purcell-enhanced spontaneous emission

T. Suhr, N. Gregersen, M. Lorke, and J. Mørk

Appl. Phys. Lett. 98, 211109 (2011); http://dx.doi.org/10.1063/1.3592571 (3 pages) | Cited 3 times

Online Publication Date: 24 May 2011

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The modulation bandwidth for a quantum dot light-emitting device is calculated using a detailed model for the spontaneous emission including the optical and electronic density-of-states. We show that the Purcell enhancement of the spontaneous emission rate depends critically on the degree of inhomogeneous broadening relative to the cavity linewidth and can improve the modulation speed only within certain parameter regimes.
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85.60.Jb Light-emitting devices

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

R. Dahal, J. Li, S. Majety, B. N. Pantha, X. K. Cao, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 98, 211110 (2011); http://dx.doi.org/10.1063/1.3593958 (3 pages) | Cited 6 times

Online Publication Date: 24 May 2011

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Hexagonal boron nitride (hBN) has emerged as an important material for various device applications and as a template for graphene electronics. Low-dimensional hBN is expected to possess rich physical properties, similar to graphene. The synthesis of wafer-scale semiconducting hBN epitaxial layers with high crystalline quality and electrical conductivity control has not been achieved but is highly desirable. Large area hBN epitaxial layers (up to 2 in. in diameter) were synthesized by metal organic chemical vapor deposition. P-type conductivity control was attained by in situ Mg doping. Compared to Mg-doped wurtzite AlN, which possesses a comparable energy band gap ( ∼ 6 eV), dramatic reductions in Mg acceptor energy level and P-type resistivity (by about six to seven orders of magnitude) have been realized in hBN epilayers. The ability of conductivity control and wafer-scale production of hBN opens up tremendous opportunities for emerging applications, ranging from revolutionizing p-layer approach in III-nitride deep ultraviolet optoelectronics to graphene electronics.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.60.-q Optoelectronic devices
73.61.Ey III-V semiconductors
71.20.Nr Semiconductor compounds

A Fano-type interference enhanced quantum dot infrared photodetector

Puminun Vasinajindakaw, Jarrod Vaillancourt, Guiru Gu, Runyu Liu, Yunfeng Ling, and Xuejun Lu

Appl. Phys. Lett. 98, 211111 (2011); http://dx.doi.org/10.1063/1.3593128 (3 pages) | Cited 1 time

Online Publication Date: 25 May 2011

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In this letter, we report a quantum dot photodetector enhanced by Fano-type interference in a metallic two-dimensional (2D) subwavelength hole array (2DSHA). The photocurrent enhancement wavelength shows an offset from the plasmonic resonant peak and corresponds to a dip in the transmission spectrum of the 2DSHA structure. The offset is attributed to the Fano-type interference in the 2DSHA structure. The asymmetric line shapes of the plasmonic resonance are analyzed and agree well with the two-peak Fano-type interference model. Over 100% enhancement in photodetectivity and photoresponsivity is achieved at the wavelength of the Fano dip of the first order plasmonic mode.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Ds Quantum interference devices

Resonant wideband polarizer with single silicon layer

Kyu J. Lee, James Curzan, Mehrdad Shokooh-Saremi, and Robert Magnusson

Appl. Phys. Lett. 98, 211112 (2011); http://dx.doi.org/10.1063/1.3594244 (3 pages) | Cited 2 times

Online Publication Date: 25 May 2011

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We present the design, fabrication, and characterization of a guided-mode resonance polarizer operating in the telecommunication band. This polarizer consists of a single one-dimensional silicon grating layer and a glass substrate. The device is designed using inverse mathematical methods and fabricated by thin-film deposition, holographic-interference patterning, and etching. The fabricated polarizer has high transmittance for transverse-magnetic polarization and low transmittance for transverse-electric polarization over a ∼ 200 nm wavelength range. Its experimental extinction ratio is ∼ 670:1 at a central wavelength λc = 1563 nm. Experimental and theoretical results are in good agreement.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Dj Gratings
84.40.-x Radiowave and microwave (including millimeter wave) technology
42.15.Eq Optical system design
42.40.My Applications
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Micromachined Fabry–Perot resonator combining submillimeter cavity length and high quality factor

M. Malak, N. Pavy, F. Marty, Y.-A. Peter, A. Q. Liu, and T. Bourouina

Appl. Phys. Lett. 98, 211113 (2011); http://dx.doi.org/10.1063/1.3595277 (3 pages) | Cited 3 times

Online Publication Date: 26 May 2011

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We demonstrate experimentally optical quality factor of nearly 9000 in a micromachined Fabry–Pérot resonator based on free space propagation of light and direct coupling to optical fibers. This result is obtained on long cavity resonators (L>250 μm), a usually difficult case in terms of power loss, but very useful configuration for experiments requiring either long optical path or enough space for manipulation. The resonator architecture includes two multilayered silicon-air Bragg mirrors of cylindrical shape, combined with a fiber rod lens. The specific stability criteria are derived for the proposed resonator architecture. Dimensions of the fabricated devices are chosen accordingly.
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42.79.Bh Lenses, prisms and mirrors
42.79.Gn Optical waveguides and couplers
42.81.Qb Fiber waveguides, couplers, and arrays

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

M. Martens, J. Schlegel, P. Vogt, F. Brunner, R. Lossy, J. Würfl, M. Weyers, and M. Kneissl

Appl. Phys. Lett. 98, 211114 (2011); http://dx.doi.org/10.1063/1.3595303 (3 pages) | Cited 3 times

Online Publication Date: 26 May 2011

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We report on the optoelectronic properties of Al0.25Ga0.75N/GaN-based ultraviolet (UV) photodetectors for the application as a high current, high gain optical switch. Due to an internal gain mechanism combined with the high conductivity of the two-dimensional electron gas at the heterostructure interface, photocurrents in the milliampere-range were obtained with UV illumination. By employing a mesa structure design with meander geometry very low dark currents below 50 nA up to a bias voltage of 100 V were achieved. Optical switching with an on/off-current-ratio of five orders of magnitude was demonstrated. The response time was determined to be 6 ms and persistent photoconductivity was observed. The photodetector is visible-blind with a cut-off wavelength of 365 nm according to the band gap energy of the GaN absorption layer. A high responsivity with a maximum of 70 A/mW at 312 nm and 100 V bias voltage was demonstrated.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Lateral tomographic spatial frequency modulated imaging

Philip Schlup, Greg Futia, and Randy A. Bartels

Appl. Phys. Lett. 98, 211115 (2011); http://dx.doi.org/10.1063/1.3595305 (3 pages) | Cited 2 times

Online Publication Date: 26 May 2011

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We demonstrate a two-dimensional imaging technique that uses a tomographic image reconstruction algorithm of object projections measured with a single photodetector. By imposing a spatially varying amplitude modulation on the illumination beam, the lateral projections of the object are encoded in the electronic spectrum of the signal from a single-element photodetector.
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87.57.Q- Computed tomography
87.63.L- Visual imaging
87.85.Pq Biomedical imaging
42.30.Wb Image reconstruction; tomography
87.57.nf Reconstruction

Polarization-resolved far-field measurement of single-cell photonic crystal lasing modes

Ju-Hyung Kang, Sun-Kyung Kim, Kwang-Yong Jeong, Yong-Hee Lee, Min-Kyo Seo, and Hong-Gyu Park

Appl. Phys. Lett. 98, 211116 (2011); http://dx.doi.org/10.1063/1.3595313 (3 pages)

Online Publication Date: 26 May 2011

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This paper reports the unambiguous identification of lasing modes observed in a single-cell photonic crystal cavity using a solid angle scanning system. The polarization-resolved far-field measurements showed distinctive features of each mode and distinguished it from the other modes in contrast to conventional optical characterization methods. Monopole, quadrupole, and hexapole lasing modes were observed and identified, showing good agreement with numerical simulations. Our understanding of the lasing modes will be useful for determining practical applications as promising light sources in ultracompact photonic integrated circuits.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.70.Qs Photonic bandgap materials
42.82.-m Integrated optics
02.70.Bf Finite-difference methods

The fine structure constant determines spontaneous emission rates from semiconductors

Thomas Szkopek

Appl. Phys. Lett. 98, 211117 (2011); http://dx.doi.org/10.1063/1.3591171 (3 pages)

Online Publication Date: 26 May 2011

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The probability of spontaneous emission from a semiconductor, per oscillation of the optical field, is proportional to the cube of the fine structure constant α and the ratio of the semiconductor dipole parameter Ep to hydrogen’s Rydberg energy. Expressions for radiative recombination rates in quantum wells and bulk semiconductors are given, including the bimolecular radiative recombination coefficient B. We show that α sets the natural scale for spectral density of spontaneous emission per square wavelength area of a quantum well. The fine structure constant also sets a physical limit to the Purcell enhancement factor for spontaneous emission.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.21.Fg Quantum wells
68.65.Fg Quantum wells

Distributed feedback quantum cascade lasers at 13.8 μm on indium phosphide

Peter Fuchs, Julia Semmel, Jochen Friedl, Sven Höfling, Johannes Koeth, Lukas Worschech, and Alfred Forchel

Appl. Phys. Lett. 98, 211118 (2011); http://dx.doi.org/10.1063/1.3593499 (3 pages) | Cited 1 time

Online Publication Date: 26 May 2011

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We report on the growth, processing, and characterization of distributed feedback quantum cascade lasers emitting in single mode at 13.8 μm. Lasers were grown in the indium phosphide material system with a bound-to-continuum active region and processed as double channel ridges with metalized top grating. Electro-optic characteristics as well as current and temperature tuning are investigated. Maximum single mode peak powers exceeding 800 mW at room temperature and intrapulse-tuning covering 3 cm−1 for a gas absorption experiment are demonstrated. Furthermore data on the far field are presented showing a slow-axis divergence angle of 28.3° (full width at half maximum).
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.79.Dj Gratings

Photorefractive space charge electric field in GaAs:Cr with external electric and magnetic fields

Dheeraj Sharma, Devendra Mohan, and Umesh Gupta

Appl. Phys. Lett. 98, 211119 (2011); http://dx.doi.org/10.1063/1.3592827 (3 pages)

Online Publication Date: 27 May 2011

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Using band charge transport model, the effect of external dc electric (E0) and magnetic fields (B0) on photorefractive parameters, viz, space charge electric field (ESC) and gain coefficient in steady state regime is investigated for Cr doped GaAs. In particular, space charge electric field of ∼ 105 V/cm is obtained for E0 = 5.0×102 V/cm and B0 = 0.064 T. ESC obtained is nearly 103 times higher than, in absence of either E0 or B0. The gain coefficient exhibits considerable enhancement at above values of E0 and B0.
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78.20.Mg Photorefractive effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Jp Dielectric breakdown and space-charge effects
61.72.uj III-V and II-VI semiconductors

Electromechanical wavelength tuning of double-membrane photonic crystal cavities

L. Midolo, P. J. van Veldhoven, M. A. Dündar, R. Nötzel, and A. Fiore

Appl. Phys. Lett. 98, 211120 (2011); http://dx.doi.org/10.1063/1.3593963 (3 pages) | Cited 6 times

Online Publication Date: 27 May 2011

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We present a method for tuning the resonant wavelength of photonic crystal cavities (PCCs) around 1.55 μm. Large tuning of the PCC mode is enabled by electromechanically controlling the separation between two parallel InGaAsP membranes. A fabrication method to avoid sticking between the membranes is discussed. Reversible red/blueshifting of the symmetric/antisymmetric modes has been observed, which provides clear evidence of the electromechanical tuning, and a maximum shift of 10 nm with <6 V applied bias has been obtained.
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42.70.Qs Photonic bandgap materials
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