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23 May 2011

Volume 98, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 98, 212504 (2011); http://dx.doi.org/10.1063/1.3593371 (3 pages)

K. Okumura, T. Ishikura, M. Soda, T. Asaka, H. Nakamura, Y. Wakabayashi, and T. Kimura
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At the limit of total silane gas utilization for preparation of high-quality microcrystalline silicon solar cells at high-rate plasma deposition

A. Gordijn, A. Pollet-Villard, and F. Finger

Appl. Phys. Lett. 98, 211501 (2011); http://dx.doi.org/10.1063/1.3593377 (3 pages) | Cited 3 times

Online Publication Date: 24 May 2011

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It was aimed to find a regime for high-rate deposition of microcrystalline silicon with a silane gas utilization rate close to 100%. It is found that state-of-the art solar cells can be prepared at such conditions. The interdependencies of the relevant deposition parameters were identified in an experimental study in a multidimensional parameter space in which for each condition the μc-Si crystalline volume fraction was optimized to find the “optimum phase mixture.” It is concluded that choice of the deposition pressure has a critical influence on the silane gas utilization rate and deposition rate.
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88.40.jj Silicon solar cells

Modeling statistical variations in high power microwave breakdown

John T. Krile and Andreas A. Neuber

Appl. Phys. Lett. 98, 211502 (2011); http://dx.doi.org/10.1063/1.3593385 (3 pages) | Cited 7 times

Online Publication Date: 24 May 2011

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Flashover of high power microwave (HPM) vacuum isolation windows presents a serious design limitation of megawatt class HPM systems. The delay time from HPM radiation incident on the window to flashover development on the atmospheric side is critical. Previously developed modeling efforts have yielded reasonable correlation with experimentally observed average delay times while failing to capture any statistical variations. Simply preseeding the volume with an initial electron density is identified as inadequate to describe the source of initiatory electrons. The process of field assisted electron detachment is examined and shown to be a probable candidate for the initiatory electron generation.
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52.80.Pi High-frequency and RF discharges
02.70.Rr General statistical methods

Improve growth rate of Smith–Purcell free-electron laser by Bragg reflector

D. Li (李大治), Z. Yang, Y. Tsunawaki, M. R. Asakawa, M. Hangyo, S. Miyamoto, and K. Imasaki

Appl. Phys. Lett. 98, 211503 (2011); http://dx.doi.org/10.1063/1.3594243 (3 pages)

Online Publication Date: 24 May 2011

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Grating with Bragg reflectors for the Smith–Purcell free-electron laser is proposed to improve the reflection coefficient, resulting in enhancing the interaction of the surface wave with the electron beam and, consequently, relax the requirements to the electron beam. With the help of particle-in-cell simulations, it has been shown that the usage of Bragg reflectors may improve the growth rate, shorten the time for the device to reach saturation, and lower the start current for the operation of a Smith–Purcell free-electron laser.
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41.60.Cr Free-electron lasers
42.79.Dj Gratings

Free radicals created by plasmas cause autohesive bonding in polymers

Firas Awaja, David R. McKenzie, Shengnan Zhang, and Natalie James

Appl. Phys. Lett. 98, 211504 (2011); http://dx.doi.org/10.1063/1.3592259 (3 pages) | Cited 1 time

Online Publication Date: 27 May 2011

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We find that plasma immersion ion implantation of polymer surfaces enhances their autohesive bond strength when pressed together by more than a factor of five. Both polymerising (CH4/O2) and nonpolymerising (Ar) plasmas are effective. There is currently no satisfactory theory for predicting this remarkable phenomenon. We propose that free radicals created by the plasma treatment process diffuse to the interface and cause covalent bonds to form. This theory predicts the dependence of bond strength on plasma bias voltage, treatment time, and autohesive process conditions.
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76.30.Rn Free radicals
68.47.Mn Polymer surfaces
52.77.Dq Plasma-based ion implantation and deposition
82.35.-x Polymers: properties; reactions; polymerization
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