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30 May 2011

Volume 98, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 223101 (2011); http://dx.doi.org/10.1063/1.3595266 (3 pages)

Takahiro Ohori, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Yutaka Hayashi, and Kazuhiko Matsumoto
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Room-temperature operation of a unipolar nanodiode at terahertz frequencies

Claudio Balocco, Shahrir R. Kasjoo, Xiaofeng F. Lu, Linqing Q. Zhang, Yasaman Alimi, Stephan Winnerl, and Aimin M. Song

Appl. Phys. Lett. 98, 223501 (2011); http://dx.doi.org/10.1063/1.3595414 (3 pages) | Cited 6 times

Online Publication Date: 31 May 2011

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We report on the room-temperature electrical rectification at 1.5 THz of a unipolar nanodiode based on symmetry breaking in a nanochannel. The exploitation of its nonlinear diodelike characteristic and intrinsically low parasitic capacitance enables rectification at ultrahigh speed. The zero-voltage threshold and unique planar layout make the nanodiode suitable for building large arrays. This is the highest speed reported in nanorectifiers to date.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Kk Junction diodes
85.35.-p Nanoelectronic devices
84.40.Ba Antennas: theory, components and accessories

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F. Medjdoub, M. Zegaoui, N. Rolland, and P. A. Rolland

Appl. Phys. Lett. 98, 223502 (2011); http://dx.doi.org/10.1063/1.3595943 (3 pages) | Cited 3 times

Online Publication Date: 31 May 2011

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High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1.3 A/mm with a pinchoff leakage current below 20 μA/mm and a record GaN-on-silicon extrinsic transconductance of 470 mS/mm. These results demonstrate the possibility to achieve a unique combination of large polarization with a barrier thickness as low as 3 nm while preserving a remarkably low device leakage current without using any gate insulator.
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85.30.Tv Field effect devices

Bolometric and nonbolometric radio frequency detection in a metallic single-walled carbon nanotube

Daniel F. Santavicca, Joel D. Chudow, Daniel E. Prober, Meninder S. Purewal, and Philip Kim

Appl. Phys. Lett. 98, 223503 (2011); http://dx.doi.org/10.1063/1.3593500 (3 pages) | Cited 6 times

Online Publication Date: 31 May 2011

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We characterize radio frequency detection in a high-quality metallic single-walled carbon nanotube. At a bath temperature of 77 K, only bolometric (thermal) detection is seen. At a bath temperature of 4.2 K and low bias current, the response is due instead to the electrical nonlinearity of the non-Ohmic contacts. At higher bias currents, the contacts recover Ohmic behavior and the observed response agrees well with the calculated bolometric responsivity. The bolometric response is expected to operate at terahertz frequencies, and we discuss some of the practical issues associated with developing high frequency detectors based on carbon nanotubes.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.35.Kt Nanotube devices

High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

S. C. Hung, C. W. Chen, C. Y. Shieh, G. C. Chi, R. Fan, and S. J. Pearton

Appl. Phys. Lett. 98, 223504 (2011); http://dx.doi.org/10.1063/1.3596440 (3 pages) | Cited 3 times

Online Publication Date: 3 June 2011

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AlGaN/GaN high electron mobility transistors (HEMTs) with zinc oxide (ZnO) nanowires modified gate exhibit significant changes in channel conductance upon expose to different concentration of carbon monoxide (CO) at room temperature. The ZnO nanowires, grown by chemical vapor deposition (CVD) with perfect crystal quality will attach CO molecules and release electrons, which will lead to a change in surface charge in the gate region of the HEMTs, inducing a higher positive charge on the AlGaN surface, and increasing the piezoinduced charge density in the HEMTs channel. These electrons create an image positive charge on the gate region for the required neutrality, thus increasing the drain current of the HEMTs. The HEMTs source-drain current was highly dependent on the CO concentration. The limit of detection achieved was 400 ppm in the open cavity with continuous gas flow using a 50×50 μm2 gate sensing area.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices

Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode

Hee Sung Lee, Kwang H. Lee, Youn-Gyoung Chang, Syed Raza Ali Raza, Seongil Im, Dong-Ho Kim, Hye-Ri Kim, and Gun-Hwan Lee

Appl. Phys. Lett. 98, 223505 (2011); http://dx.doi.org/10.1063/1.3598396 (3 pages) | Cited 1 time

Online Publication Date: 3 June 2011

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Photoinverter and electrical-inverter applications of amorphous GaSnZnO thin-film transistors (GTZO-TFTs) with Al2O3 dielectrics were studied. The inverters were composed of two serially connected top-gate GTZO-TFTs with different gate electrodes: semitransparent conducting NiOx and opaque Al. Since the two electrodes have so different work functions as to properly arrange the respective threshold voltages of driver and load TFTs, our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 25 for electrical gating. A dynamic photogating was demonstrated with an output photogain of ∼ 2 V as we applied a blue illumination onto semitransparent NiOx gate, through which the photons are transmitted to excite the trapped electrons at the Al2O3 dielectric/GTZO channel interface.
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85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions

Current-limiting behavior in multijunction solar cells

Avi Braun, Nadine Szabó, Klaus Schwarzburg, Thomas Hannappel, Eugene A. Katz, and Jeffrey M. Gordon

Appl. Phys. Lett. 98, 223506 (2011); http://dx.doi.org/10.1063/1.3596444 (3 pages) | Cited 5 times

Online Publication Date: 3 June 2011

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Experimental measurements on tandem GaInAsP/InGaAs concentrator solar cells are presented that demonstrate how the short-circuit current can shift from that of the higher current subcell to that of the lower current subcell as irradiance increases. Theoretical modeling illustrates how this can occur when the current-limiting subcell has a noticeably nonzero slope in its current-voltage curve near short-circuit, and should be general to all series-connected multijunction cells of this nature.
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88.40.jp Multijunction solar cells
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