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Appl. Phys. Lett. 98, 232512 (2011); http://dx.doi.org/10.1063/1.3592844 (3 pages)

Asymmetric domain wall depinning under current in spin valves with perpendicular anisotropy

S. Park1, N. M. Nguyen1, C. Burrowes1, E. E. Fullerton2, C. Chappert1, L. Prejebeanu3, F. Garcia-Sanchez3, and D. Ravelosona1

1Institut d’Electronique Fondamentale, UMR CNRS 8622, Université Paris Sud, 91405 Orsay Cedex, France
2Center for Magnetic Recording Research, University of California–San Diego, La Jolla, California 92093-0401, USA
3SPINTEC, URA 2512, CEA/CNRS/UJF/INPG, 38054 Grenoble, France

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(Received 22 February 2011; accepted 13 April 2011; published online 10 June 2011)

We have studied the current induced domain wall depinning from an artificial constriction in Co/Ni multilayer spin valves with perpendicular magnetic anisotropy. We find that the variation in the depinning field under current is strongly dependent on the direction of propagation of the domain wall. This asymmetry arises from the stray dipolar fields generated by the reference layer, which plays an important role in influencing the magnetization reversal process under current. In particular, it can favor a nucleation process instead of domain wall motion, which may be amplified by the current.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 75.70.Cn

    Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

  • 75.60.Ch

    Domain walls and domain structure

  • 75.60.Jk

    Magnetization reversal mechanisms

  • 75.30.Gw

    Magnetic anisotropy

  • 75.47.Np

    Metals and alloys

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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