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6 Jun 2011

Volume 98, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 98, 233101 (2011); http://dx.doi.org/10.1063/1.3597211 (3 pages)

Yu-Jung Lu (呂宥蓉), Hon-Way Lin (林弘偉), Hung-Ying Chen (陳虹穎), Yu-Chen Yang (楊右丞), and Shangjr Gwo (果尚志)
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Theoretical investigation of kinetics of a Cu2S-based gap-type atomic switch

Alpana Nayak, Tohru Tsuruoka, Kazuya Terabe, Tsuyoshi Hasegawa, and Masakazu Aono

Appl. Phys. Lett. 98, 233501 (2011); http://dx.doi.org/10.1063/1.3597154 (3 pages) | Cited 1 time

Online Publication Date: 6 June 2011

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Atomic switch, operating by forming and dissolving a metal-protrusion in a nanogap, shows an exponentially large bias dependence and a faster switching with increasing temperature and decreasing off-resistance. These major characteristics are explained with a simple model where the electrochemical potential at the subsurface of solid-electrolyte electrode determines the precipitation rate of metal atoms and the electric-field in the nanogap strongly affects the formation of metal-protrusion. Theoretically calculated switching time, based on this model, well reproduced the measured properties of a Cu2S-based atomic switch as a function of bias, temperature and off-resistance, providing a significant physical insight into the mechanism.
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85.35.-p Nanoelectronic devices
84.32.Dd Connectors, relays, and switches

Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

J. T. Ryan, L. C. Yu, J. H. Han, J. J. Kopanski, K. P. Cheung, F. Zhang, C. Wang, J. P. Campbell, and J. S. Suehle

Appl. Phys. Lett. 98, 233502 (2011); http://dx.doi.org/10.1063/1.3597298 (3 pages) | Cited 1 time

Online Publication Date: 6 June 2011

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The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method’s simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature “double peak” density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.
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85.30.Tv Field effect devices
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Detection of organophosphorus compound based on a sol–gel silica planar waveguide doped with a green fluorescent protein and an organophosphorus hydrolase

Y. Enami, K. Tsuchiya, and S. Suye

Appl. Phys. Lett. 98, 233503 (2011); http://dx.doi.org/10.1063/1.3596448 (3 pages)

Online Publication Date: 7 June 2011

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In this letter, the authors report the real-time detection of an organophosphorus compound using a sol–gel silica planar waveguide doped with a green fluorescent protein and an organophosphorus hydrolase on a yeast-cell surface display. The waveguide was pumped at 488 nm, and it emitted green fluorescence at the far field. The green fluorescent light at 550 nm changed by 50% from the original power 1 min after application of the organophosphorus compound. The results enable the real-time detection of sarin and other biochemicals by using an in-line fiber sensor network.
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87.85.-d Biomedical engineering
42.79.Gn Optical waveguides and couplers
42.81.Pa Sensors, gyros
87.17.-d Cell processes
87.14.E- Proteins

Diffraction less and strongly confined surface acoustic waves in domain inverted LiNbO3 superlattices

Didit Yudistira, Sarah Benchabane, Davide Janner, and Valerio Pruneri

Appl. Phys. Lett. 98, 233504 (2011); http://dx.doi.org/10.1063/1.3599569 (3 pages) | Cited 1 time

Online Publication Date: 9 June 2011

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We show that an appropriate mass-loading, placed on the surface and in between the electrodes of a coplanar acoustic LiNbO3 superlattice, can counteract lateral diffraction of surface acoustic waves (SAWs). The strong confinement corresponds to a SAW mode, whose displacement is measured using laser interferometry. The proposed SAW confinement method has also potentials in acousto-optic devices, as we demonstrate a threefold reduction in the electrical power required for complete optical switching in mass-loaded superlattice with respect to similar unloaded structure. The devices have also the advantage not to suffer additional acoustic or optical loss due to the mass-loading structure.
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43.20.Mv Waveguides, wave propagation in tubes and ducts
42.79.Jq Acousto-optical devices
43.20.Fn Scattering of acoustic waves
68.65.Cd Superlattices
42.82.-m Integrated optics
43.38.Zp Acoustooptic and photoacoustic transducers

A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect

Jung Won Seo, Seung Jae Baik, Sang Jung Kang, Yun Ho Hong, Ji Hwan Yang, and Koeng Su Lim

Appl. Phys. Lett. 98, 233505 (2011); http://dx.doi.org/10.1063/1.3599707 (3 pages) | Cited 4 times

Online Publication Date: 9 June 2011

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We report cross-bar array resistive random access memory (RRAM) devices based on a ZnO thin film fabricated at room temperature. To prevent the sneak current path in a conventional cross-bar array device, two types of heterostructure diodes, a NiO/ZnO p-n junction and a WO3/ZnO tunnel barrier both stacked on cross-bar array RRAM were employed. With rectifying characteristics and high forward current density, the sneak current path was effectively eliminated. We believe that the proposed structures are promising for cross-bar type RRAM applications.
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85.30.Kk Junction diodes
84.30.Sk Pulse and digital circuits

Extraction of additional interfacial states of silicon nanowire field-effect transistors

Soshi Sato, Wei Li, Kuniyuki Kakushima, Kenji Ohmori, Kenji Natori, Keisaku Yamada, and Hiroshi Iwai

Appl. Phys. Lett. 98, 233506 (2011); http://dx.doi.org/10.1063/1.3598402 (3 pages)

Online Publication Date: 9 June 2011

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Interfacial states of silicon nanowire field-effect transistors with rectangular-like cross-sections (wire height of 10 nm and widths of 9 and 18 nm) have been evaluated from the transfer characteristics in the subthreshold region measured at cryogenic temperatures, where kinks in the drain current becomes prominent. It is found that the kinks can be well-explained assuming local interfacial states near the conduction band (Ec). The main extracted local states have been shown to exist at 10 and 31 meV below Ec with the densities of 1.3×1013 cm−2/eV and 5.4×1012 cm−2/eV, respectively. By comparing two field-effect transistors with different wire widths, the former states can be assigned to the states located at the corner and the side surface of the wire, and the latter to the top and the bottom surfaces.
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85.30.Tv Field effect devices
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