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6 Jun 2011

Volume 98, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 98, 233101 (2011); http://dx.doi.org/10.1063/1.3597211 (3 pages)

Yu-Jung Lu (呂宥蓉), Hon-Way Lin (林弘偉), Hung-Ying Chen (陳虹穎), Yu-Chen Yang (楊右丞), and Shangjr Gwo (果尚志)
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Reduced leakage current in BiFeO3 thin films with rectifying contacts

Yao Shuai, Shengqiang Zhou, Stephan Streit, Helfried Reuther, Danilo Bürger, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, and Heidemarie Schmidt

Appl. Phys. Lett. 98, 232901 (2011); http://dx.doi.org/10.1063/1.3597794 (3 pages) | Cited 9 times

Online Publication Date: 6 June 2011

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BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole–Frenkel emission to interface-limited Schottky emission. In the present letter, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.
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75.85.+t Magnetoelectric effects, multiferroics
73.40.Ei Rectification
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Fg Pulsed laser ablation deposition

Bias controlled electrostrictive longitudinal resonance in X-cut lithium niobate thin films resonator

M. Pijolat, C. Deguet, C. Billard, D. Mercier, A. Reinhardt, M. Aïd, S. Ballandras, and E. Defay

Appl. Phys. Lett. 98, 232902 (2011); http://dx.doi.org/10.1063/1.3598410 (3 pages)

Online Publication Date: 9 June 2011

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In this letter, we show that a longitudinal acoustic wave can be generated in X-cut LiNbO3 (LNO) thin films when a voltage bias is superimposed to the radio frequency signal. Although there is normally no coupling of this wave in X-cut LNO, its electrostrictive behavior combined with bias reaching 3.9 MV/cm induces an electromechanical coupling around 11%. This experiment was performed without acoustic isolation with the LNO substrate (high overtone bulk acoustic resonator configuration).
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators

Direct trap observation in stressed SiO2 with electrically detected magnetic resonance

Yoshiki Yonamoto and Naotoshi Akamatsu

Appl. Phys. Lett. 98, 232903 (2011); http://dx.doi.org/10.1063/1.3595316 (3 pages)

Online Publication Date: 10 June 2011

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We investigated traps in unstressed/stressed SiO2 thin films with electrically detected magnetic resonance. In the unstressed SiO2, only Eγ′-centers (O3 ≡ Si⋅, ⋅ denotes a dangling bond) were observed. After imposing stresses, SiO2 exhibited soft-breakdown (SBD) or hard-breakdown (HBD) phenomena. The digital noise called random telegraph noise induced by a single trap was seen in the SBD-SiO2. We found that it is a single Eγ′-center. Also, we revealed that analog noises seen in the HBD-SiO2 originate from Si3 ≡ Si⋅ traps. Our observations clearly show a close relationship between breakdown phenomena and traps.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Td Noise processes and phenomena
73.61.Ng Insulators
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
71.55.Ht Other nonmetals

Direct and converse effect in magnetoelectric laminate composites

Kyung-Hoon Cho and Shashank Priya

Appl. Phys. Lett. 98, 232904 (2011); http://dx.doi.org/10.1063/1.3584863 (3 pages) | Cited 8 times

Online Publication Date: 10 June 2011

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In this letter, we analyze the direct and converse effect in laminate composites of magnetostrictive and piezoelectric materials. Our results deterministically show that direct magnetoelectric (ME) effect is maximized at antiresonance frequency while the converse ME effect is maximized at resonance frequency of the laminate composite. We explain this phenomenon by using piezoelectric constitutive equations and combining it with resonance boundary conditions. The dominant factor controlling the position of peak ME coefficient was found to be frequency dependent capacitance of piezoelectric layer. This study will provide guidance toward the development of magnetic field sensors based on direct effect and communication components based on converse effect.
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75.80.+q Magnetomechanical effects, magnetostriction
77.65.Fs Electromechanical resonance; quartz resonators
77.84.Lf Composite materials
77.22.Ch Permittivity (dielectric function)
77.65.Bn Piezoelectric and electrostrictive constants
75.85.+t Magnetoelectric effects, multiferroics

Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current

Yoshiki Yonamoto, Yutaka Inaba, and Naotoshi Akamatsu

Appl. Phys. Lett. 98, 232905 (2011); http://dx.doi.org/10.1063/1.3598393 (3 pages)

Online Publication Date: 10 June 2011

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The compositional dependence of trap density and origin in thin silicon oxynitride (SiOxNy) films deposited by the low pressure chemical vapor deposition method was investigated using spin dependent Poole–Frenkel (SDPF) current technique. SDPF detected two kinds of traps, K-center (N3≣Si⋅, where means a dangling bond) and K′-center (N2O≣Si⋅). With increasing oxygen concentration, the amount of K-center decreases. On the other hand, K′-center increases up to O/O+N = 0.25 and then it decreases. We propose the model that the change in the film strain by oxygen atoms induces these phenomena.
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71.55.Ht Other nonmetals
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification
73.50.Fq High-field and nonlinear effects
72.20.Ht High-field and nonlinear effects
73.61.Ng Insulators

Detection of nitrogen related traps in nitrided/reoxidized silicon dioxide films with thermally stimulated current and maximum entropy method

Yoshiki Yonamoto, Yutaka Inaba, and Naotosih Akamatsu

Appl. Phys. Lett. 98, 232906 (2011); http://dx.doi.org/10.1063/1.3596455 (3 pages) | Cited 2 times

Online Publication Date: 10 June 2011

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We constructed the new method to analyze thermally stimulated current (TSC) using maximum entropy method. This method allows us to extract trap density depending on trap energy level [Nt(Et)] from a TSC curve. Using this to analyze TSC of as-deposited, nitrided, and reoxidized thin silicon dioxide films, we were able to determine Nt(Et) of hole traps with very highly energy resolution and to observe the generation of nitrogen related hole traps.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.65.Mq Oxidation
68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
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