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6 Jun 2011

Volume 98, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 233101 (2011); http://dx.doi.org/10.1063/1.3597211 (3 pages)

Yu-Jung Lu (呂宥蓉), Hon-Way Lin (林弘偉), Hung-Ying Chen (陳虹穎), Yu-Chen Yang (楊右丞), and Shangjr Gwo (果尚志)
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Development of a magnetic resonance microscope using a high Tc bulk superconducting magnet

Kyohei Ogawa, Takashi Nakamura, Yasuhiko Terada, Katsumi Kose, and Tomoyuki Haishi

Appl. Phys. Lett. 98, 234101 (2011); http://dx.doi.org/10.1063/1.3598440 (3 pages) | Cited 4 times

Online Publication Date: 9 June 2011

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We have developed the first magnetic resonance (MR) microscope using a high critical-temperature superconducting bulk magnet. The bulk magnet comprises six annular bulk superconductors (60 mm outer diameter, 28 mm inner diameter, 20 mm high) made of c-axis oriented single-domain EuBa2Cu3Oy crystals. The magnet was energized using a superconducting NMR magnet operating at 4.7 T. The inhomogeneity of the trapped magnetic field measured with MR imaging was 3.1 ppm (rms) in the ϕ6.2 mm×9.1 mm cylindrical region. Three-dimensional MR images of a chemically fixed mouse embryo acquired with voxels of (50 μm)3 demonstrated the potential of our system.
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84.71.Ba Superconducting magnets; magnetic levitation devices

Steering of an ultrarelativistic proton beam by a bent germanium crystal

D. De Salvador, E. Bagli, O. Lytovchenko, A. Mazzolari, S. Carturan, G. Della Mea, V. Guidi, M. Bazzan, N. Argiolas, A. Carnera, D. Bolognini, S. Hasan, M. Prest, and E. Vallazza

Appl. Phys. Lett. 98, 234102 (2011); http://dx.doi.org/10.1063/1.3596709 (3 pages)

Online Publication Date: 10 June 2011

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Curved crystals, thanks to the electrostatic potential generated by the coherent atomic structure, may deflect ultrarelativistic charged particles by means of channeling and volume reflection effects. Most of the experimental knowledge about these phenomena was gathered with Si crystals, though the performance could be improved by using materials with a larger atomic number. In this letter, we investigate planar and axial channeling and volume reflection in a high quality Ge short strip crystal. All the effects are demonstrated to occur in agreement with theoretical expectations, which take into account the stronger confinement potential for an ideal Ge crystal.
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61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Observation of band gaps in the gigahertz range and deaf bands in a hypersonic aluminum nitride phononic crystal slab

M. Gorisse, S. Benchabane, G. Teissier, C. Billard, A. Reinhardt, V. Laude, E. Defaÿ, and M. Aïd

Appl. Phys. Lett. 98, 234103 (2011); http://dx.doi.org/10.1063/1.3598425 (3 pages) | Cited 5 times

Online Publication Date: 10 June 2011

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We report on the observation of elastic waves propagating in a two-dimensional phononic crystal composed of air holes drilled in an aluminum nitride membrane. The theoretical band structure indicates the existence of an acoustic band gap centered around 800 MHz with a relative bandwidth of 6.5% that is confirmed by gigahertz optical images of the surface displacement. Further electrical measurements and computation of the transmission reveal a much wider attenuation band that is explained by the deaf character of certain bands resulting from the orthogonality of their polarization with that of the source.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
71.20.Nr Semiconductor compounds

Strategies for dynamic soft-landing in capacitive microelectromechanical switches

Ankit Jain, Pradeep R. Nair, and Muhammad A. Alam

Appl. Phys. Lett. 98, 234104 (2011); http://dx.doi.org/10.1063/1.3598960 (3 pages) | Cited 2 times

Online Publication Date: 10 June 2011

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Electromechanical dielectric degradation associated with the hard landing of movable electrode is a technology-inhibiting reliability concern for capacitive RF-MEMS switches. In this letter, we propose two schemes for dynamic soft-landing that obviate the need for external feedback circuitry. Instead, the proposed resistive and capacitive braking schemes can reduce impact velocity significantly without compromising other performance characteristics like pull-in voltage and pull-in time. Resistive braking is achieved by inserting a resistance in series with the voltage source whereas capacitive braking requires patterning of the electrode or the dielectric. Our results have important implications to the design and optimization of reliability aware electrostatically actuated MEMS switches.
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84.32.Dd Connectors, relays, and switches
84.30.Jc Power electronics; power supply circuits
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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