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6 Jun 2011

Volume 98, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 98, 233101 (2011); http://dx.doi.org/10.1063/1.3597211 (3 pages)

Yu-Jung Lu (呂宥蓉), Hon-Way Lin (林弘偉), Hung-Ying Chen (陳虹穎), Yu-Chen Yang (楊右丞), and Shangjr Gwo (果尚志)
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Polarization splitting in polariton electroluminescence from an organic semiconductor microcavity with metallic reflectors

Grant H. Lodden and Russell J. Holmes

Appl. Phys. Lett. 98, 233301 (2011); http://dx.doi.org/10.1063/1.3599058 (3 pages)

Online Publication Date: 7 June 2011

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Organic semiconductors have received considerable attention as the active medium in microcavity devices that exploit the regime of strong exciton–photon coupling. The eigenstates of these systems are microcavity polaritons, whose properties are an admixture of the uncoupled exciton and photon. Organic microcavities are particularly interesting due to their large exciton binding energy which permits the electrical excitation of polaritons at room temperature. Measurements of electroluminescence are often facilitated through the use of metallic reflectors that form the optical microcavity and also serve as device electrodes. Here, we demonstrate that such structures exhibit a significant polarization splitting under both optical and electrical excitation. The size of the polarization splitting rivals those observed in strongly coupled microcavities based on distributed Bragg reflectors having a long optical penetration depth.
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42.79.Bh Lenses, prisms and mirrors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.25.Ja Polarization
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Theoretical analysis of carrier mobility in organic field-effect transistors

Yong Xu, Francis Balestra, and Gerard Ghibaudo

Appl. Phys. Lett. 98, 233302 (2011); http://dx.doi.org/10.1063/1.3599485 (3 pages) | Cited 5 times

Online Publication Date: 8 June 2011

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A theoretical analysis of the carrier mobility in organic transistors is presented. We noticed that the assumption of zero potential at open/quasi-free surface may cause a large deviation of the areal charge density in the organic film, greater in thinner-film transistors. Taking into account this effect, the effective mobility is obtained using the Kubo–Greenwood integral, which provides the total conductivity in the band and thus in the whole organic film. The mobility is studied with respect to gate voltage and temperature, for various disorder and transport diffusivity levels, enabling a better insight of the carrier mobility in organic transistors.
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85.30.Tv Field effect devices
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Low-loss asymmetric strip-loaded slot waveguides in silicon-on-insulator

Ran Ding, Tom Baehr-Jones, Woo-Joong Kim, Bryan Boyko, Richard Bojko, Alexander Spott, Andrew Pomerene, Craig Hill, Wesley Reinhardt, and Michael Hochberg

Appl. Phys. Lett. 98, 233303 (2011); http://dx.doi.org/10.1063/1.3597798 (3 pages) | Cited 2 times

Online Publication Date: 8 June 2011

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We report on low-loss asymmetric strip-loaded slot waveguides in silicon-on-insulator fabricated with 248 nm photolithography. Waveguide losses were 2 dB/cm or less at wavelengths near 1550 nm. A 40 nm strip-loading allows low-resistance electrical contact to be made to the two slot arms. The asymmetric design suppresses the TE1 mode while increasing the wavelength range for which the TE0 mode guides. This type of waveguide is suitable for building low insertion-loss, high-bandwidth, low drive-voltage modulators, when coated with an electro-optic polymer cladding.
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42.82.Et Waveguides, couplers, and arrays
85.60.-q Optoelectronic devices
42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
42.82.Cr Fabrication techniques; lithography, pattern transfer
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Diindenoperylene as ambipolar semiconductor: Influence of electrode materials and mobility asymmetry in organic field-effect transistors

Matthias Horlet, Michael Kraus, Wolfgang Brütting, and Andreas Opitz

Appl. Phys. Lett. 98, 233304 (2011); http://dx.doi.org/10.1063/1.3598423 (3 pages) | Cited 7 times

Online Publication Date: 10 June 2011

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Organic field-effect transistors were prepared using diindenoperylene as molecular semiconductor. An insulating alkane layer was used to separate the semiconductor from the underlying oxide and to suppress effects of electron traps at that surface. Diindenoperylene transistors were studied for various electrode materials. Unipolar p- and n-type as well as ambipolar devices were realized. An electron mobility of up to 0.14 cm2/V s and a hole mobility of up to 0.052 cm2/V s were found. The temperature dependent analysis shows similar trap distributions for both carrier types. Therefore the asymmetry in electron and hole transport seems to be an intrinsic effect of diindenoperylene.
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85.30.Tv Field effect devices
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