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13 Jun 2011

Volume 98, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 98, 243101 (2011); http://dx.doi.org/10.1063/1.3598468 (3 pages)

M. Beleggia, T. Kasama, R. E. Dunin-Borkowski, S. Hofmann, and G. Pozzi
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Experimental studies on the direct flexoelectric effect in α-phase polyvinylidene fluoride films

Sivapalan Baskaran, Xiangtong He, Qin Chen, and John Y. Fu

Appl. Phys. Lett. 98, 242901 (2011); http://dx.doi.org/10.1063/1.3599520 (3 pages) | Cited 6 times

Online Publication Date: 13 June 2011

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We report observation of the giant direct flexoelectric effect in α-phase polyvinylidene fluoride (PVDF) films. This unexpected phenomenon was detected in the α-phase PVDF film undergoing elastic tensile stretching. Our results have shown that the physical mechanism behind the flexoelectricity in polymers might be more complicated than the one proposed for solid crystalline dielectrics.
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77.65.-j Piezoelectricity and electromechanical effects
73.61.Ph Polymers; organic compounds
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
62.20.de Elastic moduli
68.60.Bs Mechanical and acoustical properties

Enhanced cooling capacities of ferroelectric materials at morphotropic phase boundaries

Rami Chukka, Jun Wei Cheah, Zuhuang Chen, P. Yang, S. Shannigrahi, Junling Wang, and Lang Chen

Appl. Phys. Lett. 98, 242902 (2011); http://dx.doi.org/10.1063/1.3595344 (3 pages) | Cited 6 times

Online Publication Date: 14 June 2011

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The electrocaloric properties of PbZr0.52Ti0.48O3 (PZT) epitaxial films and 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (0.7PMN-0.3PT) single crystals are measured and demonstrated enhanced low temperature refrigeration at morphotropic phase boundary compositions. The results reveal large adiabatic cooling figures in ∼ 260 nm PZT films (11 K in 15 V) and 200 μm thick 0.7PMN-0.3PT single crystals (2.7 K in 240 V) at Curie transition temperatures and secondary cooling peaks at lower temperatures, near critical points. This is a very useful aspect of ferroelectric cooling elements to attain effective cooling over wide range of working temperatures in solid-state devices.
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77.84.Cg PZT ceramics and other titanates
77.84.Ek Niobates and tantalates
77.55.Kt Pyroelectric films
77.70.+a Pyroelectric and electrocaloric effects
64.60.fh Studies of specific substances in the critical region
77.80.B- Phase transitions and Curie point

Enhanced performance of Pb0.8La0.1Ca0.1Ti0.975O3/Pb(Nb0.01Zr0.2Ti0.8)O3 multilayer thin films for pyroelectric applications

Q. G. Chi, X. Wang, W. L. Li, W. D. Fei, and Q. Q. Lei

Appl. Phys. Lett. 98, 242903 (2011); http://dx.doi.org/10.1063/1.3600336 (3 pages) | Cited 2 times

Online Publication Date: 15 June 2011

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Taking advantage of the relatively low temperature crystallization and high orientation of thin films of Pb0.8La0.1Ca0.1Ti0.975O3 (PLCT), growth of a highly (100)-oriented PLCT/Pb(Nb0.01Zr0.2Ti0.8)O3 (PNZT) multilayer film on a Pt/Ti/SiO2/Si substrate is achieved at a temperature as low as 450 °C. The interfacial diffusion in the multilayer film is decreased by the low temperature of crystallization. A relatively low dielectric constant and high pyrocoefficient are simultaneously achieved in the highly (100)-oriented PLCT/PNZT multilayer film. The high figure-of-merit obtained for this multilayer film make it a good candidate for application in pyroelectric thin-film devices.
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77.55.Kt Pyroelectric films
68.35.Fx Diffusion; interface formation
77.22.Ch Permittivity (dielectric function)
77.55.Bh Low-permittivity dielectric films

Anisotropic electrical transport properties of a two-dimensional electron gas at SrTiO3–LaAlO3 interfaces

P. Brinks, W. Siemons, J. E. Kleibeuker, G. Koster, G. Rijnders, and M. Huijben

Appl. Phys. Lett. 98, 242904 (2011); http://dx.doi.org/10.1063/1.3600339 (3 pages) | Cited 4 times

Online Publication Date: 15 June 2011

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Experimental evidence of strong in-plane anisotropy in electrical properties of the confined electron gas at the SrTiO3–LaAlO3 interface on top of (LaAlO3)0.3(Sr2AlTaO3)0.7 substrates is provided by detailed transport measurements. Structured measurement geometries in multiple directions are used to show dependence of the sheet resistance with the in-plane angle θ, which is fitted with a sine function with a period of 180°. The carrier density remains constant and a directional dependence of the carrier mobility of more than one order of magnitude is determined with respect to the orientation of the unit cell height steps present at the SrTiO3–LaAlO3 interface.
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73.40.-c Electronic transport in interface structures
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications

X. D. Huang, P. T. Lai, L. Liu, and J. P. Xu

Appl. Phys. Lett. 98, 242905 (2011); http://dx.doi.org/10.1063/1.3601473 (3 pages) | Cited 1 time

Online Publication Date: 17 June 2011

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Charge-trapping characteristics of SrTiO3 with and without nitrogen incorporation were investigated based on Al/Al2O3/SrTiO3/SiO2/Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO3/SiO2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO3 as charge-trapping layer (CTL), the one with nitrided SrTiO3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 104 s), due to the nitrided SrTiO3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO2 by nitrogen passivation.
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84.32.Tt Capacitors
84.30.Sk Pulse and digital circuits

Ferroelectric properties and dynamic scaling of 〈100〉 oriented (K0.5Na0.5)NbO3 single crystals

Shashaank Gupta and Shashank Priya

Appl. Phys. Lett. 98, 242906 (2011); http://dx.doi.org/10.1063/1.3600058 (3 pages) | Cited 3 times

Online Publication Date: 17 June 2011

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In this letter, we report the dielectric and ferroelectric (FE) characteristics of potassium sodium niobate (K0.5Na0.5NbO3) single crystals grown by flux method. Orientation analysis of as-grown cubical-shaped crystals was conducted by electron backscattered diffraction technique revealing the 〈100〉 crystallographic orientation of two opposing major faces. Annealed crystals were found to exhibit FE orthorhombic to FE tetragonal transition temperature of 200 °C and Curie temperature of 407 °C. Poled 〈100〉 oriented crystals had longitudinal piezoelectric constant of 148 pC/N. Dielectric measurement as a function of temperature was conducted to determine the second order parameter in Gibbs free energy expansion. Dynamic hysteresis analysis on these crystals showed the power law relations to be of the form 〈A〉∝f0.47Eo−0.85Eo1.45f0.14 and 〈A〉∝f0.04Eo below and above the coercive field.
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77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.10.Dn Growth from solutions
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