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Appl. Phys. Lett. 98, 251916 (2011); http://dx.doi.org/10.1063/1.3600333 (3 pages)

Enhanced performance of room-temperature-grown epitaxial thin films of vanadium dioxide

Joyeeta Nag1, E. Andrew Payzant2, Karren L. More3, and Richard F. Haglund, Jr.1

1Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235-1807, USA
2Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
3SHaRE Program, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

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(Received 23 January 2011; accepted 25 May 2011; published online 24 June 2011)

Vanadium dioxide (VO2) in bulk, thin-film, and nanostructured forms exhibits an insulator-to-metal transition accompanied by structural reorganization, induced by temperature, light, electric fields, doping, or strain. We have grown epitaxial films of VO2 on c-cut (0001) sapphire following two different procedures: (1) room-temperature growth followed by annealing and (2) direct high-temperature growth. We find that variations in strain at the film-substrate interface in the two protocols leads to differences in morphologies and transition characteristics. Our results show that room-temperature-grown epitaxial films have smoother morphologies and better switching contrast, analogous to the enhanced performance of epitaxially grown compound semiconductors.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 68.55.A-

    Nucleation and growth

  • 68.65.-k

    Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

  • 71.30.+h

    Metal-insulator transitions and other electronic transitions

  • 81.15.Fg

    Pulsed laser ablation deposition

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 81.40.Gh

    Other heat and thermomechanical treatments

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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