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Applied Physics Letters / Volume 98 / Issue 26 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 98, 262104 (2011); http://dx.doi.org/10.1063/1.3604020 (3 pages)

The metallic interface between the two band insulators LaGaO3 and SrTiO3

S. Nazir, N. Singh, and U. Schwingenschlögl

Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia

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(Received 16 February 2011; accepted 6 June 2011; published online 28 June 2011)

The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory. Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

APW calculations, bonds (chemical), density functional theory, interface states, interface structure, lanthanum compounds, strontium compounds

PACS

  • 73.20.At

    Surface states, band structure, electron density of states

  • 68.35.Ct

    Interface structure and roughness

  • 71.15.Mb

    Density functional theory, local density approximation, gradient and other corrections

  • 71.15.Ap

    Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3604020

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. B. Neaton and K. M. Rabe, Appl. Phys. Lett. 82, 1586 (2003)APPLAB000082000010001586000001.

    G. Herranz et al., Phys. Rev. Lett. 98, 216803 (2007).

    S. Okamoto et al., Phys. Rev. Lett. 97, 056802 (2006).

    S. S. Kancharla and E. Dagotto, Phys. Rev. B 74, 195427 (2006).

    T. Fix et al., Phys. Rev. Lett. 103, 166802 (2009).

    C. Bell et al., Phys. Rev. Lett. 103, 226802 (2009).

    C. Bell et al., Appl. Phys. Lett. 94, 222111 (2009)APPLAB000094000022222111000001.

    M. B. Shalom et al., Phys. Rev. Lett. 104, 126802 (2010).

    B. Liu and X. Hu, Phys. Rev. B 81, 144504 (2010).

    P. Perna et al., Appl. Phys. Lett. 97, 152111 (2010)APPLAB000097000015152111000001.

    C. Aruta et al., Appl. Phys. Lett. 97, 252105 (2010)APPLAB000097000025252105000001

    S. Nazir et al., Appl. Phys. Lett. 98, 133114 (2011)APPLAB000098000013133114000001.

    R. Pentcheva and W. E. Pickett, Phys. Rev. Lett. 102, 107602 (2009).


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