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27 Jun 2011

Volume 98, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 98, 263101 (2011); http://dx.doi.org/10.1063/1.3587576 (3 pages)

Jing Ye, Yu Zhao, Libin Tang, Li-Miao Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau
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Compact and high-quality gamma-ray source applied to 10 μm-range resolution radiography

A. Ben-Ismaïl, O. Lundh, C. Rechatin, J. K. Lim, J. Faure, S. Corde, and V. Malka

Appl. Phys. Lett. 98, 264101 (2011); http://dx.doi.org/10.1063/1.3604013 (3 pages) | Cited 1 time

Online Publication Date: 27 June 2011

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Gamma-ray beams with optimal and tuneable size, temperature, and dose are of great interest for a large variety of applications. These photons can be produced by the conversion of energetic electrons through the bremsstrahlung process in a dense material. This work presents the experimental demonstration of 30 μm resolution radiography of dense objects using an optimized gamma-ray source, produced with a high-quality electron beam delivered by a compact laser-plasma accelerator.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
29.27.Eg Beam handling; beam transport
41.75.Fr Electron and positron beams

Microscale solar cells for high concentration on polycrystalline Cu(In,Ga)Se2 thin films

Myriam Paire, Laurent Lombez, Nicolas Péré-Laperne, Stephane Collin, Jean-Luc Pelouard, Daniel Lincot, and Jean-François Guillemoles

Appl. Phys. Lett. 98, 264102 (2011); http://dx.doi.org/10.1063/1.3604789 (3 pages) | Cited 2 times

Online Publication Date: 27 June 2011

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We report high concentration experiments on polycrystalline thin film solar cells. High level regime is reached, thanks to the micrometric scale of the Cu(In,Ga)Se2 cells, which strongly decreases resistive losses. A 4% absolute efficiency increase is obtained at a concentration of ×120, and current densities as high as 100 A/cm2 can be measured. These results show that the use of polycrystalline thin films under high concentration is possible, with important technological consequences.
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81.05.Hd Other semiconductors
88.40.hj Efficiency and performance of solar cells
88.40.jn Thin film Cu-based I-III-VI2 solar cells

Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires

D. Wolf, H. Lichte, G. Pozzi, P. Prete, and N. Lovergine

Appl. Phys. Lett. 98, 264103 (2011); http://dx.doi.org/10.1063/1.3604793 (3 pages) | Cited 1 time

Online Publication Date: 28 June 2011

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Electron holographic tomography (EHT), the combination of off-axis electron holography with electron tomography, is a technique, which can be applied to the quantitative 3-dimensional (3D) mapping of electrostatic potential at the nanoscale. Here, we show the results obtained in the EHT investigation of GaAs and GaAs-AlGaAs core-shell nanowires grown by Au-catalysed metalorganic vapor phase epitaxy. The unique ability of EHT of disentangling the materials mean inner potential (MIP) from the specimen projected thickness allows reconstruction of the nanowire 3D morphology and inner compositional structure as well as the measurement of the MIP.
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81.07.Gf Nanowires
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
61.05.jp Electron holography
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Shear-enhanced adhesiveless transfer printing for use in deterministic materials assembly

Andrew Carlson, Hyun-Joon Kim-Lee, Jian Wu, Paulius Elvikis, Huanyu Cheng, Anton Kovalsky, Steven Elgan, Qingmin Yu, Placid M. Ferreira, Yonggang Huang, Kevin T. Turner, and John A. Rogers

Appl. Phys. Lett. 98, 264104 (2011); http://dx.doi.org/10.1063/1.3605558 (3 pages) | Cited 2 times

Online Publication Date: 28 June 2011

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This letter describes the physics and application of an approach to transfer printing that utilizes targeted shear loading to modulate stamp adhesion in a controlled and repeatable fashion. Experimental measurements of pull-off forces as functions of shear and stamp dimension reveal key scaling properties and provide a means for comparison to theory and modeling. Examples of printed structures in suspended and multilayer configurations demonstrate some capabilities in micro/nanoscale materials assembly.
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68.35.Np Adhesion
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
66.30.Pa Diffusion in nanoscale solids

Evaluation of the transient potential drop of a four-point probe

J. R. Bowler

Appl. Phys. Lett. 98, 264105 (2011); http://dx.doi.org/10.1063/1.3606386 (3 pages)

Online Publication Date: 30 June 2011

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The time-dependent voltage across the pick-up electrodes of a four point probe has been determined analytically for a transient current pulse injected into a thick conductive plate modeled as a half-space. This is a step towards analyzing more complex transient four point probe signals from measurements on inhomogeneous conductors. Potential applications include the evaluation of depth-dependent conductivity profiles in metals and semiconductors. The analysis of homogeneous conductors shows how the signals are characterized by a time constant of the drive current and additional time constants dependent on the electromagnetic material properties and electrode spacings.
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73.40.Cg Contact resistance, contact potential
72.10.Bg General formulation of transport theory

Energy measurement in nonlinearly coupled nanomechanical modes

Alexei Gaidarzhy, Jérôme Dorignac, Guiti Zolfagharkhani, Matthias Imboden, and Pritiraj Mohanty

Appl. Phys. Lett. 98, 264106 (2011); http://dx.doi.org/10.1063/1.3604797 (3 pages)

Online Publication Date: 1 July 2011

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We report direct measurements of average vibration energy in a high frequency flexural resonance mode achieved via an-harmonic elastic coupling to a fundamental vibration mode of a nanomechanical resonator. The second order coupling effect produces a frequency shift of the read-out mode as a function of the mean square of the excitation amplitude of the high order mode. We measure frequency shifts at the lowest driving amplitudes, down to the noise floor of the experimental setup. With implementation of existing ultra-sensitive amplifiers, the reported technique will enable direct measurements of quantized energy transitions in low-thermal occupation number nanomechanical resonators.
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07.10.Cm Micromechanical devices and systems

Optimal signal-to-noise ratio for silicon nanowire biochemical sensors

Nitin K. Rajan, David A. Routenberg, and Mark A. Reed

Appl. Phys. Lett. 98, 264107 (2011); http://dx.doi.org/10.1063/1.3608155 (3 pages) | Cited 3 times

Online Publication Date: 1 July 2011

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The signal-to-noise ratio (SNR) for silicon nanowire field-effect transistors operated in an electrolyte environment is an essential figure-of-merit to characterize and compare the detection limit of such devices when used in an exposed channel configuration as biochemical sensors. We employ low frequency noise measurements to determine the regime for optimal SNR. We find that SNR is not significantly affected by the electrolyte concentration, composition, or pH, leading us to conclude that the major contributions to the SNR come from the intrinsic device quality. The results presented here show that SNR is maximized at the peak transconductance.
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87.80.-y Biophysical techniques (research methods)
82.45.Tv Bioelectrochemistry
87.15.R- Reactions and kinetics
82.80.-d Chemical analysis and related physical methods of analysis
82.45.Gj Electrolytes
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