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27 Jun 2011

Volume 98, Issue 26, Articles (26xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 263101 (2011); http://dx.doi.org/10.1063/1.3587576 (3 pages)

Jing Ye, Yu Zhao, Libin Tang, Li-Miao Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau
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Omnidirectional absorption enhancement in hybrid waveguide-plasmon system

Jing Zhang, Wenli Bai, Likang Cai, Xi Chen, Guofeng Song, and Qiaoqiang Gan

Appl. Phys. Lett. 98, 261101 (2011); http://dx.doi.org/10.1063/1.3603934 (3 pages) | Cited 2 times

Online Publication Date: 27 June 2011

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We investigate the omnidirectional absorption enhancement induced by the excitation of the localized surface plasmon in the hybrid system consisting of a gold nanowire array embedded in a slab waveguide. Assisted by the waveguide layer, the hybrid system can support the localized waveguide-plasmon resonances for a wide range of incident angles. Theoretical and experimental results are both presented to demonstrate the omnidirectional absorption enhancement which could find important applications on plasmonic-assisted photovoltaic devices or photodetectors.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Vertical field switching for blue-phase liquid crystal devices

Hui-Chuan Cheng, Jin Yan, Takahiro Ishinabe, and Shin-Tson Wu

Appl. Phys. Lett. 98, 261102 (2011); http://dx.doi.org/10.1063/1.3604011 (3 pages) | Cited 2 times

Online Publication Date: 27 June 2011

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A low-voltage (< 10 V), high-transmittance (> 80%), submillisecond-response, and hysteresis-free polymer-stabilized blue-phase liquid crystal (BPLC) device with vertical field switching (VFS) and oblique incident light are demonstrated experimentally. Unlike the commonly employed in-plane switching in which the electric field is primarily in lateral direction and not uniform spatially, the VFS mode has uniform longitudinal field. As a result, the operating voltage is reduced by ∼ 3.2 × which in turn helps to eliminate hysteresis. The VFS mode is a promising candidate for the emerging BPLC display and photonic devices.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems

Strong coupling between excitons in J-aggregates and waveguide modes in thin polymer films

Tal Ellenbogen, Paul Steinvurzel, and Kenneth B. Crozier

Appl. Phys. Lett. 98, 261103 (2011); http://dx.doi.org/10.1063/1.3604014 (3 pages) | Cited 2 times

Online Publication Date: 28 June 2011

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We observe a large room temperature Rabi splitting for the transverse electric (190 meV) and transverse magnetic (125 meV) waveguide modes of a thin polymer film doped with J-aggregating dye, indicating strong coupling between propagating light modes and localized molecular excitons. We show that the difference in the measured splitting results from the different field distribution of the cross polarized modes. Numerical simulations indicate that the exciton-waveguide modes are as strongly coupled as exciton-surface plasmon polaritons supported by the same system.
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71.35.-y Excitons and related phenomena
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Qn Polymers; organic compounds
61.41.+e Polymers, elastomers, and plastics
02.60.-x Numerical approximation and analysis
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Stimulated emission of near-infrared radiation in silicon fin light-emitting diode

S. Saito, T. Takahama, K. Tani, M. Takahashi, T. Mine, Y. Suwa, and D. Hisamoto

Appl. Phys. Lett. 98, 261104 (2011); http://dx.doi.org/10.1063/1.3605255 (3 pages) | Cited 1 time

Online Publication Date: 28 June 2011

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We propose top-down processes to make silicon multiple quantum wells called fins for a light-emitting diode. The silicon fins are formed vertically to a substrate and embedded in a Si3N4 waveguide. By current injections into silicon fins, we have observed stimulated emission spectra peaked at the wavelengths corresponding to the periodic structures of fins. The near-field mode profiles obtained at the edge of the waveguide qualitatively agreed with theoretical calculations. It has been turned out that both transverse-electric and transverse-magnetic fields can contribute to the optical gain.
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85.60.Jb Light-emitting devices

The influence of Hausdorff dimension on plasmonic antennas with Pascal’s triangle geometry

S. Sederberg and A. Y. Elezzabi

Appl. Phys. Lett. 98, 261105 (2011); http://dx.doi.org/10.1063/1.3605570 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2011

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We introduce fractal geometry to the common bowtie antenna and investigate the influence of a key fractal parameter, Hausdorff dimension, on the broadband spectral response of the antenna. Length scaling trends are presented for antennas having various Hausdorff dimensions. We show that antennas with Pascal’s triangle geometry accommodate resonances that are red-shifted when compared to a standard bowtie antenna having the same size. Furthermore, increasing the Hausdorff dimension of the antenna blue shifts its resonance. By designing nanoplasmonic antennas with Pascal’s triangle geometry, the resonance conditions may be varied while the antenna dimensions are kept constant.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
84.40.Ba Antennas: theory, components and accessories
78.68.+m Optical properties of surfaces
73.22.Lp Collective excitations

AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate

D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury, and P. Boucaud

Appl. Phys. Lett. 98, 261106 (2011); http://dx.doi.org/10.1063/1.3605592 (3 pages) | Cited 6 times

Online Publication Date: 29 June 2011

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An original method to fabricate III-nitride photonic crystal membranes without etching of III-N materials is reported. A photonic crystal pattern is first realized in a silicon substrate. GaN quantum dots embedded in a thin AlN layer are then grown by conformal epitaxy using ammonia-based molecular beam epitaxy on the top of the patterned silicon substrate and a free-standing membrane is achieved by selective etching of the silicon substrate through the holes of the photonic crystal. Room temperature microphotoluminescence measurements show a quality factor as high as 1800 at 425 nm on a modified L3 cavity. Possibility to achieve lasing with this system is discussed.
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81.16.Rf Micro- and nanoscale pattern formation
78.55.Cr III-V semiconductors
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Enhancement of reflective second harmonic generation using periodically arrayed silver-island films

Chia-Jung Hsu, Kuo-Pin Chiu, Juh-Tzeng Lue, and Kuang Yao Lo

Appl. Phys. Lett. 98, 261107 (2011); http://dx.doi.org/10.1063/1.3605679 (3 pages)

Online Publication Date: 30 June 2011

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The characteristics of angle-resolved optical second harmonic generation (SHG) reflectance from periodically arrayed silver-island films were investigated. The silver-island films were fabricated using micro-spherical lithography. The SHG intensity from these arrays was more than one order of magnitude greater than that of flat silver films for some angles of incidence. This enhancement arises from the excitation of surface plasmon resonance at the pumping frequency. We found this resonance by analyzing the reciprocal lattice phase-matching condition for the silver-island films. The predicted surface plasmon wave vectors are in good agreement with those obtained using three-dimensional finite-difference time-domain numerical simulations.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
02.70.Bf Finite-difference methods

Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping

B. M. Monroy, O. Crégut, M. Gallart, B. Hönerlage, and P. Gilliot

Appl. Phys. Lett. 98, 261108 (2011); http://dx.doi.org/10.1063/1.3607276 (3 pages) | Cited 1 time

Online Publication Date: 1 July 2011

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We report the observation of positive optical gain in silicon nanocrystals (Si-nc) embedded in silicon nitride measured by the variable stripe length technique. We evidence the onset of stimulated emission and report gain coefficients up to 52 cm−1 at the highest excitation power (6.5 W/cm2). Photoluminescence dynamics presents two distinct recombination lifetimes in the nanosecond and the microsecond ranges. This was interpreted in terms of fast carrier trapping in nitrogen-induced localized states in the Si-nc surface and subsequent slow radiative recombination, suggesting that carrier trapping in radiative surface states plays a crucial role in the optical gain mechanism of Si-nc.
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78.55.Ap Elemental semiconductors
81.05.Cy Elemental semiconductors
78.47.jd Time resolved luminescence
68.47.Fg Semiconductor surfaces
73.20.At Surface states, band structure, electron density of states
78.45.+h Stimulated emission
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