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27 Jun 2011

Volume 98, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 98, 263101 (2011); http://dx.doi.org/10.1063/1.3587576 (3 pages)

Jing Ye, Yu Zhao, Libin Tang, Li-Miao Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau
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Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes

Jing Ye, Yu Zhao, Libin Tang, Li-Miao Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau

Appl. Phys. Lett. 98, 263101 (2011); http://dx.doi.org/10.1063/1.3587576 (3 pages) | Cited 6 times

Online Publication Date: 27 June 2011

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The authors report the fabrication of heterojunction light emitting diodes (LEDs) based on two-dimensional (2D) hexagonal ordered n-type ZnO nanomesh and p-type GaN. The 2D ZnO nanomesh array was prepared by employing polystyrene spheres as a template. When a forward bias was applied to the LED, a strong ultraviolet (UV) electroluminescence peaked at 385 nm can be observed. The peak deconvolution revealed three emission peaks at 370, 388, and 420 nm. The origin of these emission peaks will be discussed. In addition, the LED was capable of exciting a red phosphor to convert UV light into red light.
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85.60.Jb Light-emitting devices

Eigen mode approach to the sub-wavelength imaging with surface plasmon polaritons

Beibei Zhang and Jacob B. Khurgin

Appl. Phys. Lett. 98, 263102 (2011); http://dx.doi.org/10.1063/1.3600786 (3 pages)

Online Publication Date: 27 June 2011

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We develop a physically transparent model to interpret the sub-wavelength imaging with metal slabs. The model is applied to analyze the optical transfer function (OTF) and show how OTF is affected by the geometric and material parameters.
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78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Scanning tunneling microscopy image modeling for zigzag-edge graphene nanoribbons

Xiongwen Chen, Haiqing Wan, Kehui Song, Dongsheng Tang, and Guanghui Zhou

Appl. Phys. Lett. 98, 263103 (2011); http://dx.doi.org/10.1063/1.3600788 (3 pages) | Cited 1 time

Online Publication Date: 27 June 2011

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Based on the nonequilibrium Green’s function with tight-binding approximation scheme, we study the scanning tunneling microscopy (STM) current from a semi-infinite quantum wire to carbon sites of a zigzag-edge graphene nanoribbon (ZGNR) via an adatom on it. We find that although the existence of local edge states, only the even order number carbon chains near the edge provide good conducting channels, and the STM image should be alternative with dark-bright fringes. This effect has not been shown in previous studies by treating a ZGNR in its entirety, and it may be useful for the STM experimental characterization on graphene samples.
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61.48.Gh Structure of graphene
61.46.-w Structure of nanoscale materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
71.20.Tx Fullerenes and related materials; intercalation compounds

Well-aligned graphene arrays for field emission displays

Cheng-Kuang Huang, Yongxi Ou, Yaqing Bie, Qing Zhao, and Dapeng Yu

Appl. Phys. Lett. 98, 263104 (2011); http://dx.doi.org/10.1063/1.3603963 (3 pages) | Cited 5 times

Online Publication Date: 28 June 2011

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Well-aligned graphene field emission arrays were fabricated on copper foils via simple photolithography and wet etching techniques. The method offered high-ordered micro sized graphene pattern in the array elements. Field emission measurement revealed a turn-on field of 7.2 V/μm at 100 nA/cm2 and a good emission current stability. Exposed graphene edges were produced on each array element edge and found to be the significant contributors to the emission current. Owing to the obvious advantages of low cost and easy for scale-up production, this method demonstrates the feasibility of utilizing such graphene field emission array configurations in display applications.
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81.05.ue Graphene
81.65.Cf Surface cleaning, etching, patterning
85.45.Db Field emitters and arrays, cold electron emitters
85.45.Fd Field emission displays (FEDs)

Transversal electric field effect in multilayer graphene nanoribbon

S. Bala Kumar and Jing Guo

Appl. Phys. Lett. 98, 263105 (2011); http://dx.doi.org/10.1063/1.3604781 (3 pages)

Online Publication Date: 28 June 2011

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We study the effect of transversal electric-field (E-field) on the electronic properties of multilayer armchair-graphene-nanoribbon (AGNR). The bandgap in multilayer-AGNRs can be reversibly modulated with the application of E-field. At optimized widths, we obtain a semiconductor (SC) to metallic (M) and a M-SC transitions. The AGNR electronic bands undergo vivid transformations due to the E-field, leading to phenomena such as an increase in electron velocity, a change in the sign of the electron effective mass, and the formation of linear dispersion with massless Dirac fermions similar to 2D-graphene. These effects are very useful and can be utilized for device applications.
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73.21.Ac Multilayers
73.22.Pr Electronic structure of graphene
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
72.60.+g Mixed conductivity and conductivity transitions

Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

Y. Kim, W. Song, S. Y. Lee, C. Jeon, W. Jung, M. Kim, and C.-Y. Park

Appl. Phys. Lett. 98, 263106 (2011); http://dx.doi.org/10.1063/1.3605560 (3 pages) | Cited 4 times

Online Publication Date: 28 June 2011

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Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
68.65.Pg
68.55.A- Nucleation and growth

Field modulation of the electronic structure of trilayer graphene

Bi-Ru Wu

Appl. Phys. Lett. 98, 263107 (2011); http://dx.doi.org/10.1063/1.3604019 (3 pages) | Cited 1 time

Online Publication Date: 29 June 2011

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Bandgaps play a central role in modern device physics, and a tunable bandgap can provide great flexibility in device design. Herein, an investigation of trilayer graphene modulated using an external electric field is presented. The calculations for trilayer graphene with hexagonal, Bernal, and rhombohedral stacking have been carried out. It was found that the bandgap of rhombohedral trilayer graphene can be tuned using an electric field. Symmetry plays a crucial role in the modulation the bandgap of trilayer graphene through an electric field.
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73.22.Pr Electronic structure of graphene
71.20.Tx Fullerenes and related materials; intercalation compounds
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Current-induced cleaning of adsorbates from suspended single-walled carbon nanotube diodes

Argyrios Malapanis, Everett Comfort, and Ji Ung Lee

Appl. Phys. Lett. 98, 263108 (2011); http://dx.doi.org/10.1063/1.3605587 (3 pages)

Online Publication Date: 29 June 2011

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Due to their large surface-to-volume ratio compared to that of a bulk semiconductor, carbon nanotubes are very sensitive to their environment. Their properties can be dramatically changed by simple exposure to air. Here, we show that the electronic and optical properties of p-n diodes fabricated with single-walled carbon nanotubes degrade over time with exposure to ambient conditions, mainly due to adsorption onto the tube’s suspended part, which creates band-gap states. Most importantly, we demonstrate a simple technique—current annealing—that can thermally reverse such degradation.
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81.05.U- Carbon/carbon-based materials
81.07.De Nanotubes
81.40.Gh Other heat and thermomechanical treatments
81.65.Cf Surface cleaning, etching, patterning
85.35.Kt Nanotube devices
78.67.Ch Nanotubes

Inert gas jets for growth control in electron beam induced deposition

M. R. Henry, S. Kim, K. Rykaczewski, and A. G. Fedorov

Appl. Phys. Lett. 98, 263109 (2011); http://dx.doi.org/10.1063/1.3605588 (3 pages)

Online Publication Date: 29 June 2011

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An inert, precursor free, argon jet is used to control the growth rate of electron beam induced deposition. Adjustment of the jet kinetic energy/inlet temperature can selectively increase surface diffusion to greatly enhance the deposition rate or deplete the surface precursor due to impact-stimulated desorption to minimize the deposition or completely clean the surface. Physical mechanisms for this process are described. While the electron beam is also observed to generate plasma upon interaction with an argon jet, our results indicate that plasma does not substantially contribute to the enhanced deposition rate.
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81.15.Dj E-beam and hot filament evaporation deposition
52.50.Dg Plasma sources
68.43.Nr Desorption kinetics

The effects of charge injection in single-wall carbon nanotubes studied by charge-induced absorption

W. Joshua Kennedy and Z. Valy Vardeny

Appl. Phys. Lett. 98, 263110 (2011); http://dx.doi.org/10.1063/1.3606382 (3 pages)

Online Publication Date: 29 June 2011

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We studied direct charge injection in a heterogeneous film of single-wall carbon nanotubes using the technique of charge-induced absorption. We found that the injected charges screen the excitons in the semiconducting tubes, reducing their binding energy and transferring oscillator strength from the exciton transitions to free carriers. These effects parallel those of the electrochemical doping in the same samples.
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73.63.Fg Nanotubes
73.61.Cw Elemental semiconductors
71.35.-y Excitons and related phenomena

Inelastic scattering of surface plasmons in oscillating metallic waveguides

Bing Wang, Jinghua Teng, and Xiaocong Yuan

Appl. Phys. Lett. 98, 263111 (2011); http://dx.doi.org/10.1063/1.3605677 (3 pages)

Online Publication Date: 30 June 2011

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By using a metal-insulator-metal waveguide with temporally oscillating core width, the single frequency of incident surface plasmon polaritons (SPPs) could be converted to many discrete frequencies with equivalent intervals. The conversion efficiency is affected by the waveguide structure and also the amplitude and frequency of the oscillation. Finite-difference time-domain simulations revealed that the SPP frequency shift behavior is analogous to the spatial light diffraction in optical waveguide arrays. The discrete frequencies of SPPs can further be controlled by varying the initial phase of the waveguide core width oscillation. The results are explained analytically using the coupled mode theory.
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42.79.Gn Optical waveguides and couplers
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
02.70.Bf Finite-difference methods
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.82.Et Waveguides, couplers, and arrays

Edge effect on band gap shift in Si nanowires with polygonal cross-sections

Ziming Zhu, Ai Zhang, Gang Ouyang, and Guowei Yang

Appl. Phys. Lett. 98, 263112 (2011); http://dx.doi.org/10.1063/1.3605683 (3 pages) | Cited 2 times

Online Publication Date: 1 July 2011

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The strain-dependent band gap shift of Si nanowires (SiNWs) induced by the edge effect has been investigated by taking into account the shell-core configurations. It was found that the geometry of SiNWs plays the dominant effect for their band structures due to the appearance of strain in the self-equilibrium state. Theoretical analyses demonstrated that the derived relation is applicable for the band gap shift of SiNWs with polygonal cross-sections. The results were validated by compared them with the available evidences, implying that the developed method is helpful for clarifying physical mechanisms on tunable optical-electronics properties of semiconductor nanostructures.
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71.20.Mq Elemental semiconductors
81.05.Cy Elemental semiconductors
81.07.Gf Nanowires
73.22.-f Electronic structure of nanoscale materials and related systems
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Second harmonic generation in GaP photonic crystal waveguides

Kelley Rivoire, Sonia Buckley, Fariba Hatami, and Jelena Vučković

Appl. Phys. Lett. 98, 263113 (2011); http://dx.doi.org/10.1063/1.3607288 (3 pages) | Cited 1 time

Online Publication Date: 1 July 2011

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We demonstrate enhanced second harmonic generation in a gallium phosphide photonic crystal waveguide with a measured external conversion efficiency of 5 × 10−7/W. Our results are promising for frequency conversion of on-chip integrated emitters having broad spectra or large inhomogeneous broadening, as well as for frequency conversion of ultrashort pulses.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Qs Photonic bandgap materials
42.82.Et Waveguides, couplers, and arrays

Charge transport in various dimensions of small networks composed of gold nanoparticles and terthiophene wire-molecules

Yutaka Noguchi, Toshifumi Terui, Takuya Katayama, Michio M. Matsushita, and Tadashi Sugawara

Appl. Phys. Lett. 98, 263114 (2011); http://dx.doi.org/10.1063/1.3605598 (3 pages) | Cited 1 time

Online Publication Date: 1 July 2011

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We report the charge transport properties of networks composed of several to tens of gold nanoparticles (GNPs) linked by dithiolated terthiophene (3T) molecules. A large activation energy was observed for the conductance of networks with lesser dimensions. This bahavior is explained in terms of the charging energy of the GNPs in the current path. The Efros-Shklovskii variable range hopping model [A. L. Efros and B. I. Shklovskii, J. Phys. C 8, L49 (1975)] qualitatively describes the transport properties, where the dimensionality of the network and the small tunneling resistance of 3T serve as important factors.
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72.20.Ee Mobility edges; hopping transport
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Complete bandgap arising from the effects of hollow, veins, and intersecting veins in a square lattice of square dielectric rods photonic crystal

Hong-Fa Ho, Yuan-Fong Chau, Hsiao-Yu Yeh, and Fong-Lin Wu

Appl. Phys. Lett. 98, 263115 (2011); http://dx.doi.org/10.1063/1.3606530 (3 pages)

Online Publication Date: 1 July 2011

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We perform numerical analysis of ultralarge complete photonic bandgap (CPBG) of two-dimensional photonic crystals, which are square arrays of dielectric-shell rods, with dielectric veins and intersecting veins to link them. It is shown how a maximum CPBG, Δω = 0.222592(2πc/a), is obtained within the fabrication tolerance by tuning the structural parameters. In addition, the effects on CPBG arising from the metamaterial are also discussed.
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42.70.Qs Photonic bandgap materials
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
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