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Appl. Phys. Lett. 98, 032102 (2011); http://dx.doi.org/10.1063/1.3536529 (3 pages)

Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

Grant Buchowicz1,2, Peter R. Stone1,2, Jeremy T. Robinson3, Cory D. Cress3, Jeffrey W. Beeman1, and Oscar D. Dubon1,2

1Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
2Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
3Naval Research Laboratory, Washington, D.C. 20375, USA

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(Received 4 November 2010; accepted 16 December 2010; published online 18 January 2011)

Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following the controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra for fluences ranging from 1012 to 1015 cm−2 indicate that the structure of graphene evolves from a highly ordered layer, to a patchwork of disordered domains, to an essentially amorphous film. These structural changes result in a dramatic decrease in the Hall mobility by orders of magnitude while, remarkably, the Hall concentration remains almost unchanged, suggesting that the Fermi level is pinned at a hole concentration near 1×1013 cm−2. A model for scattering by resonant scatterers is in good agreement with mobility measurements up to an ion fluence of 1×1014 cm−2.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 61.48.Gh

    Structure of graphene

  • 73.22.Pr

    Electronic structure of graphene

  • 78.67.Wj

    Optical properties of graphene

  • 78.30.Na

    Fullerenes and related materials

  • 61.80.Jh

    Ion radiation effects

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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