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Applied Physics Letters / Volume 98 / Issue 3 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 98, 032105 (2011); http://dx.doi.org/10.1063/1.3544051 (3 pages)

Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes

Wootae Lee1, Gunho Jo1, Sangchul Lee2, Jubong Park1, Minseok Jo1, Joonmyoung Lee1, Seungjae Jung1, Seonghyun Kim1, Jungho Shin1, Sangsu Park2, Takhee Lee1,2, and Hyunsang Hwang1,2

1School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500–712, Republic of Korea
2Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea

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(Received 9 October 2010; accepted 30 December 2010; published online 20 January 2011)

We report resistive switching in Pr0.7Ca0.3MnO3 (PCMO) devices using multilayer graphene (MLG) for nonvolatile memory applications. When MLG was used as a conducting electrode, PCMO device exhibited resistive switching with an on/off ratio of over two orders of magnitude and stable retention characteristics for over 104 s at 85 °C. Raman spectroscopy in both resistance states revealed increases in D and D′ peaks associated with defects and large shift in G peak position for high-resistance state. This was attributed to formation and dissolution of oxygenated graphene at the MLG/PCMO interface, resulting in resistive switching.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

calcium compounds, electrical resistivity, graphene, multilayers, praseodymium compounds, Raman spectra, random-access storage

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3544051

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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