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Applied Physics Letters / Volume 98 / Issue 3 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 98, 032110 (2011); http://dx.doi.org/10.1063/1.3548539 (3 pages)

Nanowatt logic stochastic resonance in branched resonant tunneling diodes

F. Hartmann1, A. Forchel1, I. Neri2, L. Gammaitoni2, and L. Worschech1

1Technische Physik, Physikalisches Institut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
2Dipartimento di Fisica, NiPS Laboratory, Universita di Perugia, I-06123 Perugia, Italy and Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, I-06123 Perugia, Italy

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(Received 16 December 2010; accepted 5 January 2011; published online 21 January 2011)

The authors have fabricated branched resonant tunneling diodes (RTDs). Using two branches as inputs, universal logic-gate operation was investigated as a function of noise added to the input signal. The difference in the output voltage, used as a measure for logic operation, shows a peak in the noise power characteristic associated with logic stochastic resonance. The split RTD allows morphing between universal logic-gates solely controlled by the noise level with power differences in the nanowatt range.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

logic gates, noise, resonant tunnelling diodes

PACS

  • 85.75.Mm

    Spin polarized resonant tunnel junctions

  • 84.30.Sk

    Pulse and digital circuits

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3548539

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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