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17 Jan 2011

Volume 98, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 98, 031101 (2011); http://dx.doi.org/10.1063/1.3529469 (3 pages)

Sinan Balci, Askin Kocabas, Coskun Kocabas, and Atilla Aydinli
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Constant voltage stress induced charge trapping and detrapping characteristics of the Si3N4 uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated HfO2/SiON gate stack

Yung-Yu Chen, Chih-Ren Hsieh, and Fang-Yu Chiu

Appl. Phys. Lett. 98, 033501 (2011); http://dx.doi.org/10.1063/1.3541878 (3 pages)

Online Publication Date: 18 January 2011

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Charge trapping and detrapping characteristics of Si3N4 contact etch stop layer (SiN CESL) uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) with fluorinated HfO2/SiON gate stack have been investigated for the first time. Smaller threshold voltage shift can consequently obtain for the SiN CESL strained nMOSFET with fluorinated HfO2/SiON gate stack, primarily due to passivation of oxygen vacancies and dangling bonds by either nitrogen or fluorine atoms. However, the SiN CESL strained nMOSFET with fluorinated gate stack inevitably exhibits less charge detrapping ratio, which means greater part of stress-induced charges would remain in the gate stack after nitrogen or fluorine incorporation, respectively.
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85.30.Tv Field effect devices
81.65.Rv Passivation
61.72.jd Vacancies
71.55.-i Impurity and defect levels

Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching

S. B. Lee, J. S. Lee, S. H. Chang, H. K. Yoo, B. S. Kang, B. Kahng, M.-J. Lee, C. J. Kim, and T. W. Noh

Appl. Phys. Lett. 98, 033502 (2011); http://dx.doi.org/10.1063/1.3543776 (3 pages) | Cited 6 times

Online Publication Date: 18 January 2011

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We observed reversible-type changes between bipolar (BRS) and unipolar resistance switching (URS) in one Pt/SrTiOx/Pt capacitor. To explain both BRS and URS in a unified scheme, we introduce the “interface-modified random circuit breaker network model,” in which the bulk medium is represented by a percolating network of circuit breakers. To consider interface effects in BRS, we introduce circuit breakers to investigate resistance states near the interface. This percolation model explains the reversible-type changes in terms of connectivity changes in the circuit breakers and provides insights into many experimental observations of BRS which are under debate by earlier theoretical models.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
84.32.Tt Capacitors

Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors

J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara

Appl. Phys. Lett. 98, 033503 (2011); http://dx.doi.org/10.1063/1.3543849 (3 pages) | Cited 1 time

Online Publication Date: 18 January 2011

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We report a strong Stark effect in electroluminescence (EL) from thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors. The EL peak shows a large Stark shift of up to 50 meV when a gate-induced electric field is applied. Such a large shift is observed because of the strong confinement of carriers by a Si/SiO2 quantum well. Furthermore, we observe a sudden decrease of EL intensity at a specific electric field. This feature is ascribed to electron dissociation from phosphorous atom to subbands in a triangular well at the Si/SiO2 interface by the applied electric field.
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85.30.Tv Field effect devices

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

Himchan Oh, Sung-Min Yoon, Min Ki Ryu, Chi-Sun Hwang, Shinhyuk Yang, and Sang-Hee Ko Park

Appl. Phys. Lett. 98, 033504 (2011); http://dx.doi.org/10.1063/1.3540500 (3 pages) | Cited 8 times

Online Publication Date: 18 January 2011

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The gate bias dependence on the negative bias instability under illumination was examined. As the gate bias got more negative, dominant mechanism was changed from simple charge trapping to that accompanied by generation of subgap states. Degree of threshold voltage shift was not monotonously dependent on the magnitude of negative gate bias. It is strongly related with the corresponding instability modes for different gate bias regimes. The transition of instability mechanism depends on how much the gate bias stabilizes ionized oxygen vacancy states.
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85.30.Tv Field effect devices
81.05.Gc Amorphous semiconductors
61.72.jd Vacancies

Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu, R. Gwoziecki, R. Coppard, M. Benwadih, T. Minari, K. Tsukagoshi, J. A. Chroboczek, F. Balestra, and G. Ghibaudo

Appl. Phys. Lett. 98, 033505 (2011); http://dx.doi.org/10.1063/1.3544583 (3 pages) | Cited 3 times

Online Publication Date: 20 January 2011

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A diagnostic procedure for the contact low-frequency noise sources of staggered organic transistors is presented. Like the conventional process for channel noise, the two models of carrier number fluctuations and Hooge mobility fluctuations are concerned. Both models apply to bis(triisopropylsilylethynyl) pentacene transistors at lower and higher current densities, where the contact defect density is 1000 times higher than that in the channel and a Hooge parameter around 1 is obtained, respectively. The Hooge mobility fluctuations model well accounts for the contact noise in pentacene transistors with a Hooge parameter in the range of 0.5–3.
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85.30.Tv Field effect devices

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Qi Dai, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Mary H. Crawford, Daniel D. Koleske, Min-Ho Kim, and Yongjo Park

Appl. Phys. Lett. 98, 033506 (2011); http://dx.doi.org/10.1063/1.3544584 (3 pages) | Cited 4 times

Online Publication Date: 20 January 2011

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The internal quantum efficiency (IQE)-versus-carrier-concentration (n) curves of GaN-based light-emitting diodes have been frequently described by the ABC model: IQE = Bn2/(An+Bn2+Cn3). We show that this model predicts IQE-versus-n curves that have even symmetry. Phase-space filling makes the B and C coefficients concentration-dependent. We also show that IQE-versus-n curves that take into account phase-space filling possess even symmetry. In contrast, experimental IQE-versus-n curves exhibit asymmetry. The asymmetry requires a fourth-power or higher-power contribution to the recombination rate and provides insight into the mathematical form of the droop-causing mechanisms.
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85.60.Jb Light-emitting devices

Low noise and wide bandwidth of NbN hot-electron bolometer mixers

Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman

Appl. Phys. Lett. 98, 033507 (2011); http://dx.doi.org/10.1063/1.3544050 (3 pages) | Cited 3 times

Online Publication Date: 21 January 2011

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We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
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