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17 Jan 2011

Volume 98, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 98, 031101 (2011); http://dx.doi.org/10.1063/1.3529469 (3 pages)

Sinan Balci, Askin Kocabas, Coskun Kocabas, and Atilla Aydinli
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Localization of surface plasmon polaritons in hexagonal arrays of Moiré cavities

Sinan Balci, Askin Kocabas, Coskun Kocabas, and Atilla Aydinli

Appl. Phys. Lett. 98, 031101 (2011); http://dx.doi.org/10.1063/1.3529469 (3 pages)

Online Publication Date: 18 January 2011

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In view of the progress on the confinement of light, we report on the dispersion characteristics of surface plasmon polaritons (SPPs) on two-dimensional Moiré surfaces in the visible part of the electromagnetic spectrum. Polarization dependent spectroscopic reflection measurements show omnidirectional confinement of SPPs. The resonance wavelength of SPP cavity modes can be adjusted by tuning the propagation direction of SPPs. The results may have an impact on the control of spontaneous emission and absorption with applications in light emitting diodes and solar cells, as well as in quantum electrodynamics experiments.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.25.Bs Wave propagation, transmission and absorption

Design and theoretical analysis of resonant cavity for second-harmonic generation with high efficiency

Sidong Lei, Yao Yao, Zhaosheng Li, Tao Yu, and Zhigang Zou

Appl. Phys. Lett. 98, 031102 (2011); http://dx.doi.org/10.1063/1.3544056 (3 pages)

Online Publication Date: 19 January 2011

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An improved theoretical model is built to discuss the second-harmonic generation (SHG) with high efficiency in a microcavity. Meanwhile, the configuration of the cavity is optimized according to it. It is found that when the length of the cavity leads to a π phase mismatch between fundamental and second-harmonic wave, the cavity reaches its optimum working condition. The SHG efficiency has been calculated for a 10.6 μm laser in a 106.3 μm 〈111〉 GaAs cavity.
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42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Controllable assembly and cycling conversion of various supramolecular aggregates of a cyanine dye

Hongxia Sun, Junfeng Xiang, Qianfan Yang, Qian Shang, Qiuju Zhou, Yanxia Zhang, Guangzhi Xu, and Yalin Tang

Appl. Phys. Lett. 98, 031103 (2011); http://dx.doi.org/10.1063/1.3535980 (3 pages)

Online Publication Date: 19 January 2011

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Constructing dye supramolecular aggregates and regulating their structures have been very important tasks in recent years due to their excellent properties and promising applications in many fields. In this paper, four kinds of aggregates have been constructed by using a cyanine dye under controllable conditions, and a simple method to realize a cycling conversion around these aggregates has been developed. To construct and regulate these aggregates were easily manipulated and identified, and could be directly observed with unaided eye.
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81.20.-n Methods of materials synthesis and materials processing

Strong pulse asymmetry in quantum-dot mode-locked semiconductor lasers

Mindaugas Radziunas, Andrei G. Vladimirov, Evgeny A. Viktorov, Gerrit Fiol, Holger Schmeckebier, and Dieter Bimberg

Appl. Phys. Lett. 98, 031104 (2011); http://dx.doi.org/10.1063/1.3544579 (3 pages) | Cited 1 time

Online Publication Date: 20 January 2011

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We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-section semiconductor lasers. A mode decomposition technique reveals the role of the superposition of different modal groups. The results of theoretical analysis are supported by the experimental data.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Strain distribution in bent ZnO microwires

C. P. Dietrich, M. Lange, F. J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund, and M. Grundmann

Appl. Phys. Lett. 98, 031105 (2011); http://dx.doi.org/10.1063/1.3544939 (3 pages) | Cited 1 time

Online Publication Date: 20 January 2011

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ZnO microwires grown by carbothermal reduction were mechanically bent and the uniaxial stress state was studied with spatially resolved low-temperature photoluminescence. Inhomogeneous (tensile and compressive) stress (up to ±1 GPa) is visualized by the redshift and blueshift of the wire luminescence. Experimentally determined tensile and compressive strain along the c-axis (wire axis) of up to 1.5 %, symmetrically distributed with respect to the central axis (neutral fiber), is achieved, resulting in maximum energetic shifts of ±30 meV. Within these experiments, we are able to precisely determine the direct relation between energetic shift of the free A-exciton energy and strain to (−2.04±0.02) eV.
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81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
78.55.Et II-VI semiconductors
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.16.-c Methods of micro- and nanofabrication and processing

Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers

E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, and H. von Känel

Appl. Phys. Lett. 98, 031106 (2011); http://dx.doi.org/10.1063/1.3541782 (3 pages) | Cited 10 times

Online Publication Date: 20 January 2011

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We report on the observation of room temperature direct band gap photoluminescence in compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed experimental study of the temperature dependence of the photoluminescence is carried out from 5 K up to room temperature. We find that the direct gap photoluminescence at room temperature is due to the thermal excitation of carriers from L-type to Γ-type confined states. Room temperature photoluminescence shows that Ge/SiGe multiple quantum wells are promising candidates for efficient light emitting devices monolithically integrated on Si.
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81.05.Cy Elemental semiconductors
81.07.St Quantum wells
78.67.De Quantum wells
78.55.Ap Elemental semiconductors
73.21.Fg Quantum wells

On the role of evanescent modes and group index tapering in slow light photonic crystal waveguide coupling efficiency

Amir Hosseini, Xiaochuan Xu, David N. Kwong, Harish Subbaraman, Wei Jiang, and Ray T. Chen

Appl. Phys. Lett. 98, 031107 (2011); http://dx.doi.org/10.1063/1.3548557 (3 pages) | Cited 1 time

Online Publication Date: 21 January 2011

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We investigate effects of different mechanisms on coupling efficiency between strip waveguides and the slow light mode in photonic crystal waveguides (PCWs). Both numerical simulations and experimental results show that group index (ng) tapering improves strip-PCW butt-coupling efficiency when compared to a direct coupling between a strip waveguide and a high-ng PCW. However, coupling efficiency is even higher when an intermediate low-ng PCW is used to couple from a strip waveguide to a high-ng PCW without an ng tapering. Our results suggest that the role of evanescent mode is more dominant in efficient coupling between two PCWs with large ng mismatch.
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84.40.Az Waveguides, transmission lines, striplines
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.70.Qs Photonic bandgap materials
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