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24 Jan 2011

Volume 98, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 98, 043101 (2011); http://dx.doi.org/10.1063/1.3536475 (3 pages)

Zhichao Ruan and Shanhui Fan
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Understanding electroforming in bipolar resistive switching oxides

F. Gomez-Marlasca, N. Ghenzi, M. J. Rozenberg, and P. Levy

Appl. Phys. Lett. 98, 042901 (2011); http://dx.doi.org/10.1063/1.3537957 (3 pages) | Cited 5 times

Online Publication Date: 25 January 2011

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We study electroforming on the resistive switching (RS) behavior of silver-manganite interfaces. Using the technique of hysteresis switching loops we define an electroforming procedure that enables us to study its influence on the RS behavior in a systematic manner. We show that two similar electroforming procedures may lead to either RS or no RS at all. We explain the observed behavior by associating the forming procedure and the memory switching operation to major and minor hysteresis loops, respectively. With the obtained insight we propose a simple and nearly optimal electroforming procedure.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
82.45.-h Electrochemistry and electrophoresis
81.10.Fq Growth from melts; zone melting and refining
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

Jesse S. Jur, Virginia D. Wheeler, Daniel J. Lichtenwalner, Jon-Paul Maria, and Mark A. L. Johnson

Appl. Phys. Lett. 98, 042902 (2011); http://dx.doi.org/10.1063/1.3541883 (3 pages) | Cited 3 times

Online Publication Date: 26 January 2011

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Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic 〈111〉-oriented Sc2O3 is observed on GaN [0001] with a lattice mismatch of 7.2%, whereas La2O3 growth, with a lattice mismatch of ∼ 21%, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc2O3 interfacial layer between La2O3 and GaN and a Sc2O3 capping layer, the crystal quality of the predominantly La2O3 layer is improved and the stack is stabilized against hydroxide formation under ambient conditions.
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68.55.A- Nucleation and growth
77.55.-g Dielectric thin films
61.66.Fn Inorganic compounds
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