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24 Jan 2011

Volume 98, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 98, 043101 (2011); http://dx.doi.org/10.1063/1.3536475 (3 pages)

Zhichao Ruan and Shanhui Fan
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Unpolarized H1 photonic crystal nanocavities fabricated by stretched lattice design

I. J. Luxmoore, E. D. Ahmadi, A. M. Fox, M. Hugues, and M. S. Skolnick

Appl. Phys. Lett. 98, 041101 (2011); http://dx.doi.org/10.1063/1.3544932 (3 pages) | Cited 4 times

Online Publication Date: 24 January 2011

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We investigate the factors that affect the mode splitting in H1 planar photonic crystal cavities and hence demonstrate unpolarized emission with a high quality factor. Finite difference time domain simulations show that systematic errors in the fabrication process such as hole shape and period lift the degeneracy of the orthogonally polarized fundamental modes. By intentionally stretching the photonic crystal lattice in one direction, we show that the wavelength and mode splitting can be tuned to compensate for such fabrication errors. By using this technique, we demonstrate unpolarized emission at 951 nm with a quality factor of ∼ 4500.
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42.70.Qs Photonic bandgap materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
02.70.Bf Finite-difference methods

Thermo-optic tuning of erbium-doped amorphous silicon nitride microdisk resonators

Aaron C. Hryciw, Rohan D. Kekatpure, Selçuk Yerci, Luca Dal Negro, and Mark L. Brongersma

Appl. Phys. Lett. 98, 041102 (2011); http://dx.doi.org/10.1063/1.3545845 (3 pages) | Cited 3 times

Online Publication Date: 24 January 2011

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We demonstrate a technique to yield a direct and sensitive measurement of the thermo-optic coefficient (TOC) for light-emitting materials in optical microdisk resonators. Using photoluminescence from erbium-doped amorphous silicon nitride (a-SiNx:Er) as an example, we show how the TOC can be extracted from thermally induced shifts in the resonant microdisk modes. For the highest-performance a-SiNx:Er material composition, we find a TOC at 1.54 μm of ∼ 3×10−5 K−1 in the 300–500 K range. Additionally, our work demonstrates a convenient all-optical spectroscopic technique for sensitive temperature measurements, with a resolution of ∼ 30 mK in this temperature range.
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78.20.N- Thermo-optic effects
85.60.Jb Light-emitting devices
42.82.Et Waveguides, couplers, and arrays

Limiting performance analysis of cascaded interband/intersubband thermophotovoltaic devices

Jian Yin and Roberto Paiella

Appl. Phys. Lett. 98, 041103 (2011); http://dx.doi.org/10.1063/1.3548672 (3 pages) | Cited 1 time

Online Publication Date: 24 January 2011

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This work addresses the question of how much electrical power can in principle be extracted from heat radiation via the combined use of interband and intersubband photodetection as a way to overcome the fundamental limitations of existing thermophotovoltaic devices using mature InP-based technology. Very efficient coverage of the incident radiation spectrum and optimal current matching can be achieved using multiple quantum-cascade structures monolithically integrated with a p-n junction by taking advantage of their intrinsic cascading scheme, spectral agility, and design flexibility. Numerical simulations indicate that this approach can effectively double the present state-of-the-art in thermophotovoltaic output electrical power.
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84.60.Jt Photoelectric conversion
02.60.-x Numerical approximation and analysis

Optofluidic Fabry–Pérot cavity biosensor with integrated flow-through micro-/nanochannels

Yunbo Guo, Hao Li, Karthik Reddy, Hrishikesh S. Shelar, Vasuki R. Nittoor, and Xudong Fan

Appl. Phys. Lett. 98, 041104 (2011); http://dx.doi.org/10.1063/1.3548673 (3 pages) | Cited 10 times

Online Publication Date: 24 January 2011

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An optofluidic Fabry–Pérot cavity label-free biosensor with integrated flow-through micro-/nanochannels is proposed and demonstrated, which takes advantages of the large surface-to-volume ratio for analyte concentration and high detection sensitivity and built-in fluidic channels for rapid analyte delivery. The operating principle is first discussed, followed by assembly of a robust sensing system. Real-time measurements are performed to test its sensing feasibility and capability including bulk solvent change and removal/binding of molecules from/onto the internal surface of fluidic channels. The results show that this sensor provides a very promising platform for rapid, sensitive, and high-throughput biological and chemical sensing.
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87.80.Ek Mechanical and micromechanical techniques
87.85.Rs Nanotechnologies-applications
87.85.gf Fluid mechanics and rheology
87.15.hj Transport dynamics

Influence of pulse duration, energy, and focusing on laser-assisted water condensation

Y. Petit, S. Henin, J. Kasparian, J. P. Wolf, P. Rohwetter, K. Stelmaszczyk, Z. Q. Hao, W. M. Nakaema, L. Wöste, A. Vogel, T. Pohl, and K. Weber

Appl. Phys. Lett. 98, 041105 (2011); http://dx.doi.org/10.1063/1.3546172 (3 pages) | Cited 6 times

Online Publication Date: 26 January 2011

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We investigate the influence of laser parameters on laser-assisted water condensation in the atmosphere. Pulse energy is the most critical parameter. Nanoparticle generation depends linearly on energy beyond the filamentation threshold. Shorter pulses are more efficient than longer ones with saturation at ∼ 1.5 ps. Multifilamenting beams appear more efficient than strongly focused ones in triggering the condensation and growth of submicronic particles, while polarization has a negligible influence on the process. The data suggest that the initiation of laser-assisted condensation relies on the photodissociation of the air molecules rather than on their photoionization.
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42.62.-b Laser applications
68.03.Fg Evaporation and condensation of liquids
82.50.Hp Processes caused by visible and UV light

Observation of anisotropically reflected colors in chiral monomer-doped cholesteric liquid crystals

Cheng-Kai Liu, Ko-Ting Cheng, and Andy Ying-Guey Fuh

Appl. Phys. Lett. 98, 041106 (2011); http://dx.doi.org/10.1063/1.3545848 (3 pages) | Cited 1 time

Online Publication Date: 27 January 2011

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Observations of the anisotropically reflected colors from a film that is based on chiral monomer-doped cholesteric liquid crystals (CM-CLCs) are made. The key to obtaining such anisotropically reflected colors is the produced multidomain planar-CLCs structures, which can simultaneously reflect and scatter the incident light. UV polymerization of the CMs from one side of the cell results in an inhomogeneous distribution of pitch lengths across the cell, which is responsible for the anisotropically reflected colors from the two surfaces of the sample. Furthermore, the reflectivity and the bandwidth of the reflection spectrum depend on the cell gap.
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78.66.Qn Polymers; organic compounds
78.30.C- Liquids
68.15.+e Liquid thin films
61.30.-v Liquid crystals
78.40.Dw Liquids

ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection

Guoping Wang, Sheng Chu, Ning Zhan, Yuqing Lin, Leonid Chernyak, and Jianlin Liu

Appl. Phys. Lett. 98, 041107 (2011); http://dx.doi.org/10.1063/1.3551628 (3 pages) | Cited 11 times

Online Publication Date: 28 January 2011

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ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.
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81.05.Dz II-VI semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.Gf Nanowires
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