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24 Jan 2011

Volume 98, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 98, 043101 (2011); http://dx.doi.org/10.1063/1.3536475 (3 pages)

Zhichao Ruan and Shanhui Fan
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Design of subwavelength superscattering nanospheres

Zhichao Ruan and Shanhui Fan

Appl. Phys. Lett. 98, 043101 (2011); http://dx.doi.org/10.1063/1.3536475 (3 pages) | Cited 5 times

Online Publication Date: 24 January 2011

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We design a subwavelength superscattering nanosphere with plasmonic-dielectric-plasmonic layer structure. We show that the scattering cross section of such a particle can be significantly enhanced by employing multiple resonances with different total angular momenta, and by ensuring that all these resonances have almost the same frequency and operate in the overcoupling region.
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72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
81.16.-c Methods of micro- and nanofabrication and processing
73.22.Lp Collective excitations

Watching bismuth nanowires grow

Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Kyu Hwan Oh, Peter W. Voorhees, and Wooyoung Lee

Appl. Phys. Lett. 98, 043102 (2011); http://dx.doi.org/10.1063/1.3535956 (3 pages) | Cited 3 times

Online Publication Date: 25 January 2011

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We report real-time high temperature scanning electron microscopy observations of the growth of bismuth nanowires via the on-film formation of nanowires (OFF-ON) method. These observations provide experimental evidence that thermally induced-stress on a Bi film is the driving force for the growth of Bi nanowires with high aspect ratios, uniform diameter, and high-quality crystallinity. Our results show that immobile grain boundaries in the Bi film are required for the growth of nanowires so that grain broadening resulting in hillock formation can be prevented. This study not only provides an understanding of the underlying mechanism, but also affords a strategy for facilitating nanowire growth by OFF-ON.
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81.07.Gf Nanowires
81.16.-c Methods of micro- and nanofabrication and processing
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
61.72.Mm Grain and twin boundaries
81.05.Bx Metals, semimetals, and alloys

Air trapped nanocavity induced superhydrophobicity on GaN microbelt

Prasana Sahoo, S. Dhara, S. Dash, Baldev Raj, I. Manna, and A. K. Tyagi

Appl. Phys. Lett. 98, 043103 (2011); http://dx.doi.org/10.1063/1.3541877 (3 pages) | Cited 4 times

Online Publication Date: 26 January 2011

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In the present study, nanotextured surface protrusion induced superhydrophobicity in GaN microbelt is reported. The results show that along with nanometer-scale topographic features, the special air trapped nanocavities formed beneath the liquid droplet are solely responsible for the transition of superhydrophobicity having hydrophilic origin in GaN. The built-in nanocavities, ( ∼ 80 nm in diameter) provide an ideal model for producing stable air trapped region. A calculation of shape of the meniscus at the interface of air and water in an isolated cavity correlates well with the macroscopic surface wetting behavior.
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68.08.Bc Wetting
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Growth of multilayers of Bi2Se3/ZnSe: Heteroepitaxial interface formation and strain

H. D. Li, Z. Y. Wang, X. Guo, Tai Lun Wong, Ning Wang, and M. H. Xie

Appl. Phys. Lett. 98, 043104 (2011); http://dx.doi.org/10.1063/1.3548865 (3 pages) | Cited 6 times

Online Publication Date: 26 January 2011

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Multilayers of Bi2Se3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi2Se3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi2Se3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi2Se3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi2Se3, which could be attributed to the specific growth modes and the properties of Bi2Se3 and ZnSe surfaces.
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68.65.Ac Multilayers
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Dz II-VI semiconductors
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Raman spectroscopy of iodine molecules trapped in zeolite crystals

Wenhao Guo, Dingdi Wang, Juanmei Hu, Z. K. Tang, and Shengwang Du

Appl. Phys. Lett. 98, 043105 (2011); http://dx.doi.org/10.1063/1.3549194 (3 pages) | Cited 2 times

Online Publication Date: 26 January 2011

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We study the Raman spectroscopy of neutral iodine molecules confined in the channels of zeolite AlPO4-5 (AFI) and AlPO4-11 (AEL) crystals, which shows that the molecular vibration states are significantly modified by the confinements from the nanosize channels. An iodine molecule trapped in the AEL crystal has an effective internuclear potential close to an ideal harmonic oscillator, while that in the AFI crystal behaves similarly to that in free space. The results are further confirmed by measuring the temperature dependence of Raman spectral width.
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33.20.Fb Raman and Rayleigh spectra (including optical scattering)
33.15.Mt Rotation, vibration, and vibration-rotation constants
33.70.Jg Line and band widths, shapes, and shifts

Photoabsorption and photoelectric process in Si nanocrystallites

Anchala, S. P. Purohit, and K. C. Mathur

Appl. Phys. Lett. 98, 043106 (2011); http://dx.doi.org/10.1063/1.3548861 (3 pages)

Online Publication Date: 27 January 2011

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Using the effective mass approximation, we investigate the photoabsorption and photoelectric process in the conduction band of a single electron charged spherical Si semiconductor quantum dot nanostructure embedded in the amorphous SiO2 matrix. We consider the potential barrier at the interface as of (i) infinite and (ii) finite heights. The effect of self-energy associated with surface polarization due to the charging of the quantum dot is also considered. Our results of photoabsorption coefficient for (1s-1p) transition are found to be in good agreement with the available experimental data.
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73.61.Cw Elemental semiconductors
78.67.Hc Quantum dots
72.40.+w Photoconduction and photovoltaic effects
61.46.-w Structure of nanoscale materials

Binding of deposited gold clusters to thiol self-assembled monolayers on Au(111) surfaces

Leila Costelle, Tommi T. Järvi, Minna T. Räisänen, Vladimir Tuboltsev, and Jyrki Räisänen

Appl. Phys. Lett. 98, 043107 (2011); http://dx.doi.org/10.1063/1.3548862 (3 pages) | Cited 3 times

Online Publication Date: 27 January 2011

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We study the mechanisms involved in Au nanocluster deposition on thiol self-assembled monolayer modified Au(111) surfaces. Molecular dynamics simulations reveal a wide range of cluster-surface binding configurations within a very narrow deposition energy range (0.2–0.6 eV/atom for ∼ 2.5 nm diameter clusters). These go from noncovalent to full contact and include surprising intermediate cases in which the clusters are bound to the underlying Au(111) surface via molecular links and nanowires. Experiments show that, subsequently, the clusters are covered by thiols and slightly flattened.
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81.16.Dn Self-assembly
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials

Silicon nanowires for high-specificity and high-selectivity sensors under low-frequency scanning

Xiaodie He, Chunsheng Guo, Yang Liu, Chi Him A. Tsang, Dorothy Duo Duo Ma, Ruiqin Zhang, Ning-Bew Wong, Zhenhui Kang, and Shuit-Tong Lee

Appl. Phys. Lett. 98, 043108 (2011); http://dx.doi.org/10.1063/1.3549067 (3 pages) | Cited 2 times

Online Publication Date: 28 January 2011

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The high specificity and selectivity of H–Si nanowire bundles, which are single crystalline and composed of pure Si without oxygen, for detecting water (peak at 12 Hz) and ethanol (peak at 70 Hz) in their mixture are measured by a frequency scanning test. The signal amplitude deduced between the work channel and the reference channel {[(VR-VS)/VR]×100%} is defined as the impedance recorded under different scanning frequencies.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
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