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31 Jan 2011

Volume 98, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 98, 053101 (2011); http://dx.doi.org/10.1063/1.3549154 (3 pages)

Minggang Zeng, Lei Shen, Ming Yang, Chun Zhang, and Yuanping Feng
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High-speed electret charging using vacuum UV photoionization

Makoto Honzumi, Kei Hagiwara, Yoshinori Iguchi, and Yuji Suzuki

Appl. Phys. Lett. 98, 052901 (2011); http://dx.doi.org/10.1063/1.3548866 (3 pages) | Cited 3 times

Online Publication Date: 1 February 2011

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We propose a high-speed charging method of electrets using vacuum ultraviolet irradiation. Due to a large amount of the ionization current at reduced pressure, it takes only a few seconds to charge 15-μm-thick polymer electret film to the surface potential of −900 V. This charging rate is two orders of magnitudes larger than corona/soft-x-ray charging methods. The purity of N2 gas depends on the charging rate since the O2 quenching mechanisms of exited N2 molecule would exist. No charge decay is observed for 3000 h, which indicates charged electrets are as stable as those by other charging methods.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
73.61.Ph Polymers; organic compounds
77.55.-g Dielectric thin films
61.82.Pv Polymers, organic compounds

Measurement of depth and energy of buried trap states in dielectric films by single electron tunneling force spectroscopy

J. P. Johnson, D. W. Winslow, and C. C. Williams

Appl. Phys. Lett. 98, 052902 (2011); http://dx.doi.org/10.1063/1.3549150 (3 pages) | Cited 1 time

Online Publication Date: 1 February 2011

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Electronic trap states in dielectric materials critically influence the reliability and performance of electronic devices. A method to characterize such states with atomic scale spatial resolution is presented. The method is based on tunneling charge measurements, performed at different voltages and tip-sample gaps, and a tunneling model. When combined with previously demonstrated two-dimensional trap state imaging, this method will provide for three-dimensional imaging of electronic defect states in dielectrics with atomic scale spatial resolution.
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77.55.-g Dielectric thin films
71.55.Ht Other nonmetals
71.20.Ps Other inorganic compounds

Enhancement of tetragonality and role of strontium vacancies in heterovalent doped SrTiO3

A. Tkach, A. Almeida, J. Agostinho Moreira, T. M. Correia, M. R. Chaves, O. Okhay, P. M. Vilarinho, I. Gregora, and J. Petzelt

Appl. Phys. Lett. 98, 052903 (2011); http://dx.doi.org/10.1063/1.3549181 (3 pages) | Cited 4 times

Online Publication Date: 1 February 2011

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The effect of Sr vacancies on the behavior of strontium titanate with trivalent dopants (La3+, Gd3+, and Y3+) substituting Sr2+ ions is reported. A remarkable shift of the antiferrodistortive transition temperature Ta is revealed by Raman spectroscopy for just a small content of dopant. It is shown that a unique linear dependence of Ta versus tolerance factor is obtained when Sr-vacancies are taken into account. A vacancy size value of ∼ 1.54 Å is estimated, which is ∼ 7% larger than Sr2+ radius. This size difference enables explaining the unexpected increase of lattice parameter with increasing Bi3+ content in Sr1−1.5xBixTiO3.
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61.72.jd Vacancies
77.80.B- Phase transitions and Curie point
78.30.Hv Other nonmetallic inorganics
61.66.Fn Inorganic compounds
61.72.up Other materials

Determining ferroelectric polarity at the nanoscale

James M. LeBeau, Adrian J. D’Alfonso, Nicholas J. Wright, Leslie J. Allen, and Susanne Stemmer

Appl. Phys. Lett. 98, 052904 (2011); http://dx.doi.org/10.1063/1.3549300 (3 pages) | Cited 2 times

Online Publication Date: 1 February 2011

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Position averaged convergent beam electron diffraction (PACBED) in scanning transmission electron microscopy is shown to be capable of determining the direction of ferroelectric polarity at the nanoscale. We show that PACBED patterns of ferroelectric materials such as PbTiO3 and BaTiO3 are sensitive to both unit cell distortion and the absolute direction of polarity within the unit cell. It is shown that the polarity can be determined even in cases where real-space high-resolution transmission electron microscopy would not be capable of resolving the atomic displacements. The method is applied to determine the direction of polarization in an epitaxial BaTiO3 film.
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77.55.Px Epitaxial and superlattice films
77.22.Ej Polarization and depolarization
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity

Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents

C. H. Cheng, Albert Chin, and F. S. Yeh

Appl. Phys. Lett. 98, 052905 (2011); http://dx.doi.org/10.1063/1.3549689 (3 pages) | Cited 6 times

Online Publication Date: 1 February 2011

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We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiOx to form the cost-effective Ni/GeOx/SrTiOx/TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.
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84.30.Sk Pulse and digital circuits

Transition from relaxor to ferroelectric-like phase in poly(vinylideneflouride-trifluoroethylene-chloroflouroethylene) terpolymer ultrathin films

J. L. Wang, S. Z. Yuan, L. Tian, X. J. Meng, J. L. Sun, and J. H. Chu

Appl. Phys. Lett. 98, 052906 (2011); http://dx.doi.org/10.1063/1.3551732 (3 pages) | Cited 3 times

Online Publication Date: 2 February 2011

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The poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) terpolymer (56.2/36.3/7.5, mol %) films from 1.6 to 10 nm in thickness were prepared by the Langmuir–Blodgett method. The dielectric and ferroelectric properties of the terpolymer films were investigated. The phase transition of the films of less 3.2 nm in thickness exhibits a ferroelectric-like nature, which is inconsistent with the bulk terpolymers. The peak of the permittivity is at ∼ 360 K, which is much higher than the thick terpolymer films and it is independent on frequency. Both polarization-electric field and capacitance-voltage curves show a ferroelectric-like characteristic, which is confirmed by piezoresponse force microscopy, suggesting the presence of all-trans molecular conformation.
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77.55.fp Other ferroelectric films
77.80.bj Scaling effects
77.80.Jk Relaxor ferroelectrics
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces

G. Drera, F. Banfi, F. Federici Canova, P. Borghetti, L. Sangaletti, F. Bondino, E. Magnano, J. Huijben, M. Huijben, G. Rijnders, D. H. A. Blank, H. Hilgenkamp, and A. Brinkman

Appl. Phys. Lett. 98, 052907 (2011); http://dx.doi.org/10.1063/1.3549177 (3 pages) | Cited 3 times

Online Publication Date: 2 February 2011

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Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.
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73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures
78.70.Dm X-ray absorption spectra

Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling

C. Marchiori, M. M. Frank, J. Bruley, V. Narayanan, and J. Fompeyrine

Appl. Phys. Lett. 98, 052908 (2011); http://dx.doi.org/10.1063/1.3549202 (3 pages) | Cited 4 times

Online Publication Date: 2 February 2011

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We discuss the structural and electrical properties of scaled 2 nm HfO2/SrO gate stacks. Thin SrO layers are deposited by molecular beam epitaxy onto (001) p-Si substrates as alternative passivating interfacial layers (ILs) to SiO2. X-ray photoelectron spectroscopy and transmission electron microscopy show that, despite some HfO2–SrO intermixing, the SrO IL acts as a barrier against HfxSiy and SiO2 formation during high-κ deposition. Electrical measurements on metal-oxide-semiconductor capacitors with TiN metal gates integrated in a low-temperature process flow reveal an equivalent oxide thickness of 5 Å with competitive leakage current and hysteresis and a negative flat band voltage shift, suitable for n-channel transistors.
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77.55.Px Epitaxial and superlattice films
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
85.30.Tv Field effect devices
84.32.Tt Capacitors
79.60.Dp Adsorbed layers and thin films

Acoustoelectric effects in reflection of leaky acoustic waves from LiTaO3 crystal surface coated with metal film

R. Rimeika, A. Sereika, and D. Čiplys

Appl. Phys. Lett. 98, 052909 (2011); http://dx.doi.org/10.1063/1.3552713 (3 pages) | Cited 2 times

Online Publication Date: 2 February 2011

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The strong variations in amplitude and phase of leaky acoustic wave excited on one surface of YX lithium tantalate crystal plate and reflected from the opposite parallel surface have been observed during thermal evaporation of copper film onto the reflection surface. These variations are caused by the acoustoelectric interaction in the reflection region, and they are described in terms of surface acoustic wave velocity and attenuation dependence on the film sheet conductivity. The electromechanical coupling constant value of 5% has been extracted from amplitude measurements, and that of 4% from the phase measurements.
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62.65.+k Acoustical properties of solids
72.50.+b Acoustoelectric effects
68.35.Iv Acoustical properties

Magnetocapacitance effects of Pb0.7Sr0.3TiO3/La0.7Sr0.3MnO3 thin film on Si substrate

Ying Chen, Genshui Wang, Shuai Zhang, Xiuyun Lei, Junyu Zhu, Xiaodong Tang, Yongling Wang, and Xianlin Dong

Appl. Phys. Lett. 98, 052910 (2011); http://dx.doi.org/10.1063/1.3552969 (3 pages) | Cited 3 times

Online Publication Date: 3 February 2011

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Pb0.7Sr0.3TiO3/La0.7Sr0.3MnO3 (PST/LSMO) thin film has been deposited on Si substrate by chemical solution deposition. Obvious changes in dielectric constant and loss as functions of frequency and magnetic field were observed in PST/LSMO thin film. By applying both dc bias electric and magnetic fields, apparent dielectric anomalies were observed in the “butterfly-hysteresis” curves. These effects may be useful for practical application. The mechanism for the magnetocapacitance effects in PST/LSMO is rationalized by combining the Maxwell–Wagner capacitor model and the magnetoresistivity and magnetostriction of the LSMO.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.80.+q Magnetomechanical effects, magnetostriction
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
75.50.Dd Nonmetallic ferromagnetic materials

Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces

Yoontae Hwang, Roman Engel-Herbert, and Susanne Stemmer

Appl. Phys. Lett. 98, 052911 (2011); http://dx.doi.org/10.1063/1.3553275 (3 pages) | Cited 13 times

Online Publication Date: 3 February 2011

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The growth and the electrical properties of HfO2/In0.53Ga0.47As interfaces are characterized as a function of exposure to trimethylaluminum (TMA) prior to chemical beam deposition of HfO2 from an alkoxide precursor. It is shown that TMA can act as a surfactant for HfO2 growth for (2×4) but not for the group-III-rich (4×2) reconstructed surfaces. The Fermi-level can be unpinned by postdeposition forming gas anneals only for interfaces that were exposed to low doses of TMA at low temperatures. The results are discussed in the context of the interaction between TMA and III-V surfaces.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Gh Other heat and thermomechanical treatments
68.35.bg Semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.20.At Surface states, band structure, electron density of states
68.55.A- Nucleation and growth
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