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31 Jan 2011

Volume 98, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 98, 053101 (2011); http://dx.doi.org/10.1063/1.3549154 (3 pages)

Minggang Zeng, Lei Shen, Ming Yang, Chun Zhang, and Yuanping Feng
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Is electron accumulation universal at InN polar surfaces?

Cheng-Tai Kuo (郭承泰), Shih-Chieh Lin (林詩傑), Kai-Kuen Chang (張凱焜), Hung-Wei Shiu (許紘瑋), Lo-Yueh Chang (張羅嶽), Chia-Hao Chen (陳家浩), Shu-Jung Tang (唐述中), and Shangjr Gwo (果尚志)

Appl. Phys. Lett. 98, 052101 (2011); http://dx.doi.org/10.1063/1.3549874 (3 pages) | Cited 8 times

Online Publication Date: 31 January 2011

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Recent experiments indicate the universality of electron accumulation and downward surface band bending at as-grown InN surfaces with polar or nonpolar orientations. Here, we demonstrate the possibility to prepare flatband InN (000math) surfaces. We have also measured the surface stoichiometry of InN surfaces by using core-level photoelectron spectroscopy. The flatband InN (000math) surface is stoichiometric and free of In adlayer. It implies that the removal of In adlayer at the InN (000math) surface leads to the absence of downward surface band bending. On the other hand, the stoichiometric InN (0001) surface still exhibits surface band bending due to the noncentrosymmetry in the wurtzite structure.
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73.20.At Surface states, band structure, electron density of states
68.35.bg Semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Nitrogenated amorphous InGaZnO thin film transistor

Po-Tsun Liu, Yi-Teh Chou, Li-Feng Teng, Fu-Hai Li, and Han-Ping Shieh

Appl. Phys. Lett. 98, 052102 (2011); http://dx.doi.org/10.1063/1.3551537 (3 pages) | Cited 7 times

Online Publication Date: 31 January 2011

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This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.
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81.05.Gc Amorphous semiconductors
81.15.Cd Deposition by sputtering
85.30.Tv Field effect devices
73.61.Jc Amorphous semiconductors; glasses
61.72.up Other materials

Electronic and transport properties of a nanometer-scale Au/AlN(0001)/Au junction from first-principles

T.-H. Lu and M.-H. Tsai

Appl. Phys. Lett. 98, 052103 (2011); http://dx.doi.org/10.1063/1.3551709 (3 pages) | Cited 1 time

Online Publication Date: 2 February 2011

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A nanometer-scale Au/Al(0001)/Au junction has been studied by first-principles calculation methods. The calculated current density-voltage curve shows Ohmic behavior, switching effect, and negative differential conductance in various bias ranges. The electronic structure shows the existence of an intrinsic band tilt due to the polar nature of the AlN film, which gives rise to the presence of hole states at the N-surface side and interface states at the Al-surface side of the AlN film. The bias induced changes of hole and interface states and the states of the Al and N ions in central layers determine the transport property.
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73.22.-f Electronic structure of nanoscale materials and related systems
73.63.Bd Nanocrystalline materials
71.15.-m Methods of electronic structure calculations

Conductance of kinked nanowires

B. G. Cook and K. Varga

Appl. Phys. Lett. 98, 052104 (2011); http://dx.doi.org/10.1063/1.3551711 (3 pages) | Cited 1 time

Online Publication Date: 2 February 2011

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The conductance properties of kinked nanowires are studied by first-principles transport calculations within a recently developed complex potential framework. Using prototypical examples of monoatomic Au chains as well as small diameter single-crystalline silicon nanowires we show that transmission strongly depends on the kink geometry and one can tune the conductance properties by the kink angle and other geometrical factors. In the case of a silicon nanowire the presence of a kink drastically reduces the conductance.
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81.05.Cy Elemental semiconductors
81.07.Gf Nanowires
81.07.Vb Quantum wires
81.40.Lm Deformation, plasticity, and creep
73.63.Nm Quantum wires
62.20.F- Deformation and plasticity

Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation

S. Ruffell, K. Sears, J. E. Bradby, and J. S. Williams

Appl. Phys. Lett. 98, 052105 (2011); http://dx.doi.org/10.1063/1.3549191 (3 pages) | Cited 5 times

Online Publication Date: 2 February 2011

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Conventional silicon devices are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon such as Si-XII and Si-III can be formed under pressure applied by nanoindentation and these phases are metastable at room temperature and pressure. We demonstrate in this letter that such phases exhibit different electrical properties to normal (diamond cubic) silicon and exploit this to perform maskless, room temperature, electrical patterning of silicon by writing both conductive and insulating zones directly into silicon substrates by nanoindentation. Such processing opens up a number of potentially new applications without the need for high temperature processing steps.
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81.05.Cy Elemental semiconductors
62.25.-g Mechanical properties of nanoscale systems
85.30.-z Semiconductor devices
81.16.-c Methods of micro- and nanofabrication and processing
73.61.Cw Elemental semiconductors

Suppression of the Ag/Si surface conductivity transition temperature by organic adsorbates

F. Song, L. Gammelgaard, Ph. Hofmann, and J. W. Wells

Appl. Phys. Lett. 98, 052106 (2011); http://dx.doi.org/10.1063/1.3543853 (3 pages) | Cited 2 times

Online Publication Date: 2 February 2011

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We present temperature dependent nanoscale four-contact conductance measurements performed on a submonolayer coverage of cobalt phthalocyanine on Si(111)–(math×math)Ag. The presence of the organic adsorbates suppresses the reversible Ag/Si surface phase transition temperature and reduces the magnitude of the accompanying switching of the surface conductance. The absence of an observable Kondo effect is also discussed in terms of the reported electron transfer between the Ag/Si surface and the Co2+ ion.
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73.40.Ns Metal-nonmetal contacts
73.25.+i Surface conductivity and carrier phenomena
72.60.+g Mixed conductivity and conductivity transitions
68.35.Rh Phase transitions and critical phenomena
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Effects of hole doping in electronic states of La1−xSrxMnO3 probed by magnetic Compton scattering

T. Mizoroki, M. Itou, Y. Taguchi, T. Iwazumi, and Y. Sakurai

Appl. Phys. Lett. 98, 052107 (2011); http://dx.doi.org/10.1063/1.3552683 (3 pages)

Online Publication Date: 3 February 2011

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We have carried out magnetic Compton scattering measurements on polycrystalline samples of the perovskite manganites La1−xSrxMnO3 covering the hole-doping range from x = 0.1 to x = 0.5. Charge and magnetic Compton profiles were measured in order to obtain Compton profiles of spin-wise subbands. By considering the doping-dependency of the subband Compton profiles, we show how the electronic states evolve associated with hole doping. The results indicate that doped holes predominantly enter into the O 2p states in the lightly doped region and the charge transfer occurs from the up-spin Mn 3d to the down-spin Mn 3d states in the heavily doped region.
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71.20.Ps Other inorganic compounds
78.70.Ck X-ray scattering
71.70.-d Level splitting and interactions
61.72.up Other materials

Enhanced annealing of implantation-induced defects in 4H-SiC by thermal oxidation

L. S. Løvlie and B. G. Svensson

Appl. Phys. Lett. 98, 052108 (2011); http://dx.doi.org/10.1063/1.3531755 (3 pages) | Cited 1 time

Online Publication Date: 3 February 2011

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Annealing of the prominent Z1/2 defect in 4H-SiC has been studied after thermal treatment in N2 and O2 atmospheres at 1150 °C subsequent to implantation with MeV Si-ions to doses in the range of (1–4)×108 cm−2. The annealing rate is found to be significantly enhanced under oxidizing conditions, while in N2 atmosphere Z1/2 remains stable. Hence, a substantial lowering of the annealing temperature required for defect removal in 4H-SiC doped by ion-implantation may be expected using oxidizing annealing atmosphere. Concentration versus depth profiles of Z1/2 clearly show that it is annihilated by defect species injected from the SiO2/4H-SiC interface during oxidation. The injection rate of the in-diffusing species is found to be about (1.2±0.2)×106 cm−2 s−1, and the concentration ratio of the injected species relative to the native atoms originally present in the oxidized volume is ∼ 1×10−7. A model where the annihilating species are injected from the surface with a diffusion coefficient of about 10−8 cm2/s yields excellent agreement with the experimental data.
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61.72.Cc Kinetics of defect formation and annealing
81.65.Mq Oxidation
68.35.Fx Diffusion; interface formation
61.72.up Other materials
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