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31 Jan 2011

Volume 98, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 98, 053101 (2011); http://dx.doi.org/10.1063/1.3549154 (3 pages)

Minggang Zeng, Lei Shen, Ming Yang, Chun Zhang, and Yuanping Feng
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Nonlinear dynamics of relativistic charged particle beams

R. P. Nunes and F. B. Rizzato

Appl. Phys. Lett. 98, 051501 (2011); http://dx.doi.org/10.1063/1.3549690 (3 pages)

Online Publication Date: 31 January 2011

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The idea behind this work is to analyze the transversal dynamics of a relativistic charged particle beam. The beam is azimuthally symmetric, focused by a constant magnetic field and supposed to be initially cold. While mismatched, nonrelativistic, and homogeneous beams oscillate with an invariant cold density profile, it is shown that relativistic homogeneous beams progressively heat and lose an important amount of constituents during its magnetic confinement. This heating process starts with phase-space wave-breaking, a mechanism observed before in initially inhomogeneous beams. The results have been obtained with full self-consistent N-particle beam numerical simulations.
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41.75.-i Charged-particle beams
41.85.Ja Particle beam transport

Child–Langmuir law in the Coulomb blockade regime

Yingbin Zhu and L. K. Ang

Appl. Phys. Lett. 98, 051502 (2011); http://dx.doi.org/10.1063/1.3549868 (3 pages) | Cited 5 times

Online Publication Date: 31 January 2011

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The one-dimensional (1D) classical Child–Langmuir (CL) law has been extended to the Coulomb blockade (single to few electrons) regime, including the effect of single-electron charging. It is found that there is a threshold of voltage (Vth) equals to one-half of the single-electron charging energy for electron injection assuming zero barrier at the interface. For voltage in the range of 1<V/Vth<2, there is only one electron inside the gap, and the time-averaged single-electron injected current is equal or higher than the 1D CL current.
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73.23.Hk Coulomb blockade; single-electron tunneling

Raman scattering analysis of silicon dioxide single crystal treated by direct current plasma discharge

D. M. Popovic, V. Milosavljevic, A. Zekic, N. Romcevic, and S. Daniels

Appl. Phys. Lett. 98, 051503 (2011); http://dx.doi.org/10.1063/1.3543838 (3 pages)

Online Publication Date: 1 February 2011

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Low-k materials such as silicon dioxide (SiO2) play an important role in the semiconductor industry. Plasma has become indispensable for advanced materials processing. In this work a treatment of SiO2 single crystal by direct current plasma discharge is studied in detail. Offline metrology is conducted for silicon dioxide wafers by Raman scattering, energy-dispersive x-ray spectroscopy, and ellipsometry. Broad Raman peak at around 2800 cm−1 is observed for the treated SiO2 wafers. Effects of plasma treatment on position of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etch rate sensors, which might be of importance in managing plasma etching processes.
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78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics
77.55.D- High-permittivity gate dielectric films
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Impact of electromagnetic radiation on cascaded failure in high voltage insulators

A. Bojovschi, K. L. Wong, and W. S. T. Rowe

Appl. Phys. Lett. 98, 051504 (2011); http://dx.doi.org/10.1063/1.3551544 (3 pages) | Cited 1 time

Online Publication Date: 4 February 2011

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A cause of aging and cascaded failure of high voltage insulators is investigated by assessing the radiation propagating from a faulty insulator. The transfer of electromagnetic energy from corona discharge to healthy insulators situated on the same power pole is assessed. The results show that the high intensity of electric field associated with corona discharge on faulty insulators can lead to aging and finally failure of high voltage infrastructure.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
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