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7 Feb 2011

Volume 98, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 063101 (2011); http://dx.doi.org/10.1063/1.3551574 (3 pages)

Y. Z. He, H. Li, P. C. Si, Y. F. Li, H. Q. Yu, X. Q. Zhang, F. Ding, K. M. Liew, and X. F. Liu
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Room-temperature semiconductor coherent Smith–Purcell terahertz sources

Don D. Smith and Alexey Belyanin

Appl. Phys. Lett. 98, 063501 (2011); http://dx.doi.org/10.1063/1.3554364 (3 pages)

Online Publication Date: 8 February 2011

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We propose a room-temperature semiconductor source of coherent narrowband Smith–Purcell radiation (SPR) in the low-to-mid terahertz range. The device is a planar Gunn diode with a metallic grating deposited near the drift region. Stimulated SPR is generated as domains move under the grating. Radiation frequency is determined by the domain velocity and grating period—it is not transit-time limited. The approach is photolithographically tunable, readily scales to arrays, and is compatible with any planar Gunn technology. Integration with a planar antenna improves radiation efficiency and enables far-field optimization. We develop an analytic theory of the devices which agrees well with simulations. Results indicate that this method may achieve technologically relevant power density levels and warrants experimental investigation.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
84.40.-x Radiowave and microwave (including millimeter wave) technology

Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

Dae Woong Kwon, Jang Hyun Kim, Ji Soo Chang, Sang Wan Kim, Wandong Kim, Jae Chul Park, Ihun Song, Chang Jung Kim, U In Jung, and Byung-Gook Park

Appl. Phys. Lett. 98, 063502 (2011); http://dx.doi.org/10.1063/1.3549180 (3 pages) | Cited 3 times

Online Publication Date: 8 February 2011

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Negative bias-induced instability of amorphous hafnium indium zinc oxide (α-HIZO) thin film transistors (TFTs) was investigated at various temperatures. In order to examine temperature-induced effects, fabricated TFTs with different combinations of gate insulator and gate metal were stressed by a negative gate bias at various temperatures. As a result, it is proved that negative bias-induced hole-trapping in the gate insulators and temperature-enhanced electron injection from the gate metals occurs at the same time at all temperatures, and the instability of HIZO TFT is more affected by the dominant factor out of the two mechanisms.
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81.05.Gc Amorphous semiconductors
85.30.Tv Field effect devices
73.61.Jc Amorphous semiconductors; glasses
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Diameter-dependent analytical model for light spot movement in carbon nanotube array transistors

Tarek M. Abdolkader and Muhammad A. Alam

Appl. Phys. Lett. 98, 063503 (2011); http://dx.doi.org/10.1063/1.3549769 (3 pages)

Online Publication Date: 8 February 2011

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We present a rigorous analytical model for the movement of light spot emitted in single-wall nanotube transistors (SWNTs) including the dependence of this movement on tube diameter. Since the rate of change of light spot movement with gate bias is a sensitive function of the tube diameter, the model can be used as an in situ nondestructive tool to probe the electrically relevant diameter distribution in SWNT arrays and thereby could complement traditional indirect techniques like Raman spectroscopy and atomic force microscopy. Establishing such a diameter distribution has broad implications regarding the performance/integration of SWNT for potential applications in emerging carbon electronics.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices

Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics

Changhwan Choi and Jack C. Lee

Appl. Phys. Lett. 98, 063504 (2011); http://dx.doi.org/10.1063/1.3541879 (3 pages) | Cited 1 time

Online Publication Date: 11 February 2011

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Negative bias temperature instabilities (NBTIs) of p-channel metal-oxide-semiconductor field-effect-transistor with HfO2, HfOxNy, and HfSiON were investigated. Higher bulk trap generation (ΔNot) is mainly attributed to threshold voltage shift rather than interface trap generation (ΔNit). ΔNit, ΔNot, activation energy (Ea), and lifetime were exacerbated with incorporated nitrogen while improved with adding Si into gate dielectrics. Compared to HfO2, HfOxNy showed worse NBTI due to nitrogen pile-up at Si interface. However, adding Si into HfOxNy placed nitrogen peak profile away from Si/oxide interface and NBTI was reduced. This improvement is ascribed to reduced ΔNot and ΔNit, resulting from less nitrogen at Si interface.
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85.30.Tv Field effect devices

Fast polarization switching panel with high brightness and contrast ratio for three-dimensional display

Hun Ki Shin, Joong Ha Lee, Jung-Wook Kim, Tae-Hoon Yoon, and Jae Chang Kim

Appl. Phys. Lett. 98, 063505 (2011); http://dx.doi.org/10.1063/1.3548863 (3 pages) | Cited 2 times

Online Publication Date: 11 February 2011

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We propose a polarization switching device using optically compensated pi cell for polarization-glass-type three-dimensional display. This device shows good optical properties such as high transmittance and low cross-talk ratio because of its fast dynamic response characteristics. To improve the brightness and contrast ratio on the right- and left-hand sides, we attach optical retardation films on each side of the polarization glasses instead of attaching the films on the polarization switching panel. From the calculation and experiment, we obtain high contrast ratios, over 200:1, on both sides and a high brightness using only one film on each side.
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85.60.Pg Display systems
42.79.Kr Display devices, liquid-crystal devices
42.25.Ja Polarization

Material anisotropy unveiled by random scattering of surface acoustic waves

Vincent Laude, Kimmo Kokkonen, Sarah Benchabane, and Matti Kaivola

Appl. Phys. Lett. 98, 063506 (2011); http://dx.doi.org/10.1063/1.3554424 (3 pages)

Online Publication Date: 11 February 2011

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We consider launching a monochromatic surface acoustic wave packet on a large set of random scatterers. The interference of the multiple scattered waves creates a random pattern of ripples on the crystal surface that is recorded by optical interferometry. The Fourier transform of the amplitude and phase data of the measured wave field unveils the complete slowness curve, i.e., the wave-vector as a function of the propagation angle. A simple acoustic speckle model is proposed to explain this observation.
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62.65.+k Acoustical properties of solids
68.35.Iv Acoustical properties

Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures

Xiao Shen, En Xia Zhang, Cher Xuan Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Sarit Dhar, Sei-Hyung Ryu, and Sokrates T. Pantelides

Appl. Phys. Lett. 98, 063507 (2011); http://dx.doi.org/10.1063/1.3554428 (3 pages) | Cited 2 times

Online Publication Date: 11 February 2011

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We find that atomic-scale mechanisms for bias-temperature instabilities (BTIs) in SiC/SiO2 structures can differ significantly from those in Si/SiO2 structures. The measured effective-activation energies for BTI in 4H-SiC metal-oxide-semiconductor capacitors, 0.23±0.02 eV for p-type and 0.12±0.02 eV for n-type, are essentially identical to the respective dopant ionization energies, which are much larger than in Si. This suggests a key role for carrier release from deep dopants for BTI in SiC. In addition, asymmetric degradation is observed under switched-bias stress in p-type and n-type SiC, as a result of the reconfiguration of O vacancies in SiO2 layer after hole capture.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.jd Vacancies

Ambient field effects on the current-voltage characteristics of nanowire field effect transistors

Shreepad Karmalkar, K. R. K. Maheswaran, and Vijayakumar Gurugubelli

Appl. Phys. Lett. 98, 063508 (2011); http://dx.doi.org/10.1063/1.3555426 (3 pages) | Cited 2 times

Online Publication Date: 11 February 2011

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We investigate the effects of ambient field from the gate and drain contacts on the current-voltage characteristics of a vertical nanowire field effect transistor having a lightly doped ungated length near the drain. Such a device is suitable for high voltage (tens of volts) applications. It is shown that the ambient field enhances the carrier concentration and divides the ungated region into gate-controlled and drain-controlled sections, controllable by the drain contact size and bias-voltages. These phenomena have a significant impact on the drain breakdown voltage, saturation voltage, saturation current and output resistance. The effects are established with the help of measured data and numerically calculated current-voltage curves and field lines.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices
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