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7 Feb 2011

Volume 98, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 063101 (2011); http://dx.doi.org/10.1063/1.3551574 (3 pages)

Y. Z. He, H. Li, P. C. Si, Y. F. Li, H. Q. Yu, X. Q. Zhang, F. Ding, K. M. Liew, and X. F. Liu
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Cross-linking effect on dielectric properties of polypropylene thin films and applications in electric energy storage

Xuepei Yuan and T. C. Mike Chung

Appl. Phys. Lett. 98, 062901 (2011); http://dx.doi.org/10.1063/1.3552710 (3 pages) | Cited 2 times

Online Publication Date: 7 February 2011

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A family of cross-linked polypropylene (x-PP) thin film dielectrics is systematically studied to understand the cross-linking effect on the dielectric properties. Evidently, the butylstyrene (BSt) cross-linkers increase both the dielectric constant (ε) and breakdown strength (E), without increasing energy loss. An x-PP dielectric, with 3.65 mol % BSt cross-linkers, exhibits a ε ∼ 3, which is independent of a wide range of temperatures and frequencies, slim D-E hysteresis loops, high breakdown strength (E = 650 MV/m), narrow breakdown distribution, and reliable energy storage capacity >5 J/cm3 (double that of state-of-the-art biaxially oriented polypropylene capacitors), without showing any increase in energy loss.
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84.32.Tt Capacitors
84.60.Ve Energy storage systems, including capacitor banks
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation

Direct writing of ferroelectric domains on the x- and y-faces of lithium niobate using a continuous wave ultraviolet laser

H. Steigerwald, Y. J. Ying, R. W. Eason, K. Buse, S. Mailis, and E. Soergel

Appl. Phys. Lett. 98, 062902 (2011); http://dx.doi.org/10.1063/1.3553194 (3 pages) | Cited 2 times

Online Publication Date: 7 February 2011

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Ferroelectric domain reversal has been achieved by scanning a tightly focused, strongly absorbed ultraviolet laser beam across the x- and y-faces of lithium niobate crystals. The domains were investigated by piezoresponse force microscopy. The emergence and width of any domain was found to depend on the scanning direction of the irradiating laser beam with respect to the polar z-axis. Full width and half width domains or no domain formation at all could be achieved for scanning along specific directions. We interpret the results by a direct correlation between the local temperature gradient and the resulting polarization direction.
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77.80.Dj Domain structure; hysteresis
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
77.22.Ej Polarization and depolarization

High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation

T.-W. Pi (皮敦文), M. L. Huang (黃懋霖), W. C. Lee (李威縉), L. K. Chu (朱龍琨), T. D. Lin (林宗達), T. H. Chiang (江宗鴻), Y. C. Wang (王貽樟), Y. D. Wu (吳彥達), M. Hong (洪銘輝), and J. Kwo (郭瑞年)

Appl. Phys. Lett. 98, 062903 (2011); http://dx.doi.org/10.1063/1.3551726 (3 pages) | Cited 3 times

Online Publication Date: 8 February 2011

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High-resolution core-level photoemission analysis using synchrotron radiation was used to investigate the superior electrical performance of aGa2O3(Gd2O3) gate dielectric on Ge(001) after CF4 treatment. Prior to the treatment, a thin germanate-like oxide layer that formed at the interface prevented Ge from diffusing to the surface. The Ge surface retained a small amount of buckled dimers from the as-grown sample. The buckled dimers were quickly removed by CF4 plasma treatment followed by an annealing process, resulting in a more uniform interface than that of the as-grown sample. The detailed interfacial electronic structure for the untreated and treated samples are presented.
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79.60.Jv Interfaces; heterostructures; nanostructures
81.40.Gh Other heat and thermomechanical treatments
68.35.Fx Diffusion; interface formation
52.77.-j Plasma applications

Low-frequency nanotesla sensitivity in Metglas/piezoelectric/carbon fiber/piezoelectric composites with active tip mass

Chee-Sung Park, Dragan Avirovik, Scott Bressers, and Shashank Priya

Appl. Phys. Lett. 98, 062904 (2011); http://dx.doi.org/10.1063/1.3552970 (3 pages) | Cited 4 times

Online Publication Date: 8 February 2011

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We report nanotesla sensitivity in Metglas/piezoelectric/carbon fiber/piezoelectric laminates with active tip mass operating in the vicinity of second bending mode. The peak magnetoelectric response for the laminate with an active tip mass (1 g) in longitudinal-transversal mode under Hdc = 8 Oe and Hac = 1 Oe was found to be ∼ 1.08 V/cm Oe at 43 Hz (first bending mode) and ∼ 19 V/cm Oe at 511 Hz (second bending mode). At the standard 1 kHz frequency, the maximum resolution of 5 nT was measured under Hac = 0.5 Oe.
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75.85.+t Magnetoelectric effects, multiferroics
77.55.Nv Multiferroic/magnetoelectric films
77.65.-j Piezoelectricity and electromechanical effects

Humidity effects on (001) BaTiO3 single crystal surface water adsorption

D. Y. He, L. J. Qiao, Alex A. Volinsky, Y. Bai, M. Wu, and W. Y. Chu

Appl. Phys. Lett. 98, 062905 (2011); http://dx.doi.org/10.1063/1.3544586 (3 pages) | Cited 6 times

Online Publication Date: 10 February 2011

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Water adsorption on (001) BaTiO3 single crystal surface under varying relative humidity conditions was studied by ab initio calculations and scanning probe microscopy utilizing different operation modes. At 95% relative humidity water droplets nucleated only on c domains, preferential adsorption location for water dipoles. BaTiO3 (001) surface long 65% relative humidity exposure lead to no contrast between a and c domains observed by electrostatic force microscopy. Ab initio calculations confirm that water molecules prefer to adsorb on c domains due to their higher surface energy.
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68.43.Mn Adsorption kinetics
68.43.Bc Ab initio calculations of adsorbate structure and reactions
68.03.Cd Surface tension and related phenomena
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